A-POWER AP03N70P-A

AP03N70P-A
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Repetitive Avalanche Rated
D
▼ Fast Switching Speed
▼ Simple Drive Requirement
G
▼ RoHS Compliant
BVDSS
650V
RDS(ON)
3.6Ω
ID
3.3A
S
Description
AP03N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.TO-220 type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DCAC converters and high current high speed switching circuits.
G
D
TO-220
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
3.3
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
2.1
A
10
A
54.3
W
0.44
W/℃
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
67
mJ
IAR
Avalanche Current
3
A
EAR
Repetitive Avalanche Energy
3
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.3
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
200704051-1/4
AP03N70P-A
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
650
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.6A
-
-
3.6
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.6A
-
2
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=3A
-
12
20
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
VGS=0V, ID=1mA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
5
-
nC
VDD=300V
-
9
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=3A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=100Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
960
pF
Coss
Output Capacitance
VDS=25V
-
45
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
4
-
pF
Min.
Typ.
IS=3A, VGS=0V
-
-
1.5
V
IS=3A, VGS=0V,
-
422
-
ns
dI/dt=100A/µs
-
2580
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
3
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=3A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP03N70P-A
2
4
10V
6.0V
o
T C =25 C
o
ID , Drain Current (A)
3
ID , Drain Current (A)
10V
5.0V
T C =150 C
2
5.0V
1
4.5V
1
4.0V
1
4.5V
V G =3.5V
V G =4.0V
0
0
0
5
10
15
20
25
0
Fig 1. Typical Output Characteristics
15
20
25
3.0
I D =1.6A
V G =10V
Normalized RDS(ON)
1.1
Normalized BVDSS (V)
10
Fig 2. Typical Output Characteristics
1.2
1.0
2.0
1.0
0.9
0.8
0.0
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
100
5
10
4
o
T j = 150 C
T j = 25 o C
VGS(th) (V)
IS (A)
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1
3
2
0.1
1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP03N70P-A
f=1.0MHz
VGS , Gate to Source Voltage (V)
16
10000
I D =3A
V DS =480V
12
C (pF)
C iss
8
100
C oss
4
C rss
0
1
0
4
8
12
16
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
Duty factor=0.5
ID (A)
10
10us
100ms
1
1ms
10ms
100ms
0
T c =25 o C
Single Pulse
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4