A-POWER AP04N70BP-A_07

AP04N70BP-A
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
BVDSS
650V
RDS(ON)
2.4Ω
ID
G
4A
S
Description
AP04N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO-220
type provide high blocking voltage to overcome voltage surge and sag in
the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
D
The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power
supplies ,DC-AC converters and high current high speed switching
circuits.
TO-220
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
4
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
2.5
A
15
A
62.5
W
0.5
W/℃
100
mJ
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
4
A
EAR
Repetitive Avalanche Energy
4
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
200302072-1/6
AP04N70BP-A
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=1mA
Min.
Typ.
Max. Units
650
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2A
-
-
2.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
2.5
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=4A
-
16.7
-
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
4.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.9
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
11
-
ns
tr
Rise Time
ID=4A
-
8.3
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
23.8
-
ns
tf
Fall Time
RD=75Ω
-
8.2
-
ns
Ciss
Input Capacitance
VGS=0V
-
950
-
pF
Coss
Output Capacitance
VDS=25V
-
65
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
-
-
4
A
-
-
15
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Tj=25℃, IS=4A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=25mH , RG=25Ω , IAS=4A.
3.Pulse test
2/6
AP04N70BP-A
2.5
2
T C =25 o C
T C =150 o C
V G =10V
V G =6.0V
V G =6.0V
2
1.5
ID , Drain Current (A)
V G =5.0V
ID , Drain Current (A)
V G =10V
1.5
V G =4.5V
1
V G =5.0V
V G =4.5V
1
V G =4.0V
0.5
0.5
V G =4.0V
V G =3.5V
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
I D =2A
2.5
V G =10V
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
2
1
1.5
1
0.9
0.5
0
0.8
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
150
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3/6
AP04N70BP-A
40
4.5
4
3
2.5
PD (W)
ID , Drain Current (A)
3.5
2
20
1.5
1
0.5
0
0
25
50
75
100
125
150
0
50
T c , Case Temperature ( o C )
100
150
T c , Case Temperature ( o C )
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
Normalized Thermal Response (Rthjc)
1
ID (A)
10
10us
100us
1
1ms
10ms
0.1
100ms
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
0.01
SINGLE PULSE
T
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
T c =25 o C
Single Pulse
0.01
0.01
1
10
100
1000
V DS (V)
Fig 7. Maximum Safe Operating Area
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
4/6
AP04N70BP-A
16
f=1.0MHz
10000
I D =4A
V DS =320V
12
Ciss
V DS =400V
10
V DS =480V
C (pF)
VGS , Gate to Source Voltage (V)
14
8
100
Coss
6
4
Crss
2
0
1
0
5
10
15
20
25
1
6
11
16
21
26
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
5
4
10
3
T j = 25 o C
VGS(th) (V)
IS (A)
T j =150 o C
2
1
1
0.1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5/6
AP04N70BP-A
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5x RATED VDS
G
10%
+
S
10 V
VGS
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
10V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
6/6