PN200A / MMBT200 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. C E TO-92 SOT-23 EBC Figure 1. PN200A Device Package B Figure 2. MMBT200 Device Package Ordering Information Part Number Marking Package Packing Method PN200A PN200A TO-92 3L Bulk MMBT200 N2 SOT-23 3L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -45 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -6 V -500 mA -55 to +150 °C IC TJ, TSTG Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. © 1997 Fairchild Semiconductor Corporation PN200A / MMBT200 Rev. 1.1.0 www.fairchildsemi.com 1 PN200A / MMBT200 — PNP General-Purpose Amplifier January 2014 Values are at TA = 25°C unless otherwise noted. Symbol Max. Parameter (3) PN200A MMBT200(4) Unit Total Device Dissipation 625 350 mW Derate Above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 PD °C/W °C/W 357 Notes: 3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics BVCEO Collector-Base Breakdown Voltage IC = -10 μA, IB = 0 Collector-Emitter Breakdown IC = -1.0 mA, IE = 0 Voltage(5) BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 ICBO Collector Cut-Off Current VCB = -50 V, IE = 0 -50 nA ICES Collector Cut-Off Current VCE = -40 V, IE = 0 -50 nA IEBO Emitter Cut-Off Current VEB = -4.0 V, IC = 0 -50 nA BVCBO -60 V -45 V -6.0 V On Characteristics hFE DC Current Gain IC = -100 μA, VCE = -1.0 V MMBT200 PN200A 240 IC = -10 mA, VCE = -1.0 V MMBT200 100 450 PN200A 300 600 PN200A 100 MMBT200 100 PN200A 100 IC = -100 mA, VCE = -1.0 V(5) IC = -150 mA, VCE = -5.0 V(5) VCE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, IB = -1.0 mA VBE(sat) Base-Emitter Saturation Voltage IC = -10 mA, IB = -1.0 mA IC = -200 mA, IB = -20 IC = -200 mA, IB = -20 80 350 -0.2 mA(5) -0.4 -0.85 mA(5) -1.00 V V Small Signal Characteristics fT Cob NF Current Gain - Bandwidth Product VCE = -20 V, IC = -20 mA, 250 MHz Output Capacitance VCB = -10 V, f = -1.0 MHz 6.0 pF Noise Figure IC = -100 μA, VCE = -5.0 V, RG = 2.0 kΩ, f = 1.0 kHz 4.0 dB Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1997 Fairchild Semiconductor Corporation PN200A / MMBT200 Rev. 1.1.0 www.fairchildsemi.com 2 PN200A / MMBT200 — PNP General-Purpose Amplifier Thermal Characteristics β β VCESAT - COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 500 V CE = 5V 400 0.25 125 °C 300 - 40 °C 0 0.01 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 0 0.1 V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) β = 10 25 °C - 40 °C 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 - 40°C 25 °C 0.6 125 °C 125 °C 0.4 0.4 V CE = 5V 0.2 0.2 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 0 0.1 1 10 I C - COLLECTOR CURRE NT (mA) 100 200 Figure 6. Base-Emitter On Voltage vs. Collector Current BV CER - BREAKDOWN VOLTAGE (V) Figure 5. Base-Emitter Saturation Voltage vs. Collector Current I CBO - COLLE CTOR CURRENT (nA) 125 °C 1 0.8 - 40 °C 0.6 0 0.1 25 °C 0.1 Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current 1 0.8 0.2 0.05 Figure 3. Typical Pulsed Current Gain vs. Collector Current 1.2 β = 10 0.15 25 °C 200 100 0.3 100 95 V CB = 50V 90 10 85 1 80 0.1 0.01 25 75 50 75 100 T A - AMBIE NT TEMPERATURE ( ° C) 70 0.1 125 10 RESISTANCE (kΩ ) 100 1000 Figure 8. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Figure 7. Collector Cut-Off Current vs. Ambient Temperature © 1997 Fairchild Semiconductor Corporation PN200A / MMBT200 Rev. 1.1.0 1 www.fairchildsemi.com 3 PN200A / MMBT200 — PNP General-Purpose Amplifier Typical Performance Characteristics β V CE - COLLECTOR-EMITTER VOLTAGE (V) 100 4 f = 1.0 MHz CAPACITANCE (pF) Ta = 25°C 3 Ic = 2 100 uA 300 mA 50 mA 1 0 100 300 700 10 Cib Cob 0.1 2000 4000 1 I B - BASE CURRENT (uA) f T - GAIN BANDWIDTH PRODUCT (MHz) 100 Figure 10. Input and Output Capacitance vs. Reverse Voltage Figure 9. Collector Saturation Region 300 40 270 Vce = 5V ts 240 30 TIME (nS) 210 20 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 10 tf 60 30 0 10 V CE - COLLECTOR VOLTAGE (V) 1 10 20 50 0 10 100 150 I C - COLLECTOR CURRENT (mA) tr td 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) 300 Figure 12. Switching Times vs. Collector Current Figure 11. Gain Bandwidth Product vs. Collector Current P D - POWER DISSIPATION (mW) 700 600 500 TO-92 400 SOT-23 300 200 100 0 0 25 50 75 100 TEMPER ATURE ( °C) 125 150 Figure 13. Power Dissipation vs. Ambient Temperature © 1997 Fairchild Semiconductor Corporation PN200A / MMBT200 Rev. 1.1.0 www.fairchildsemi.com 4 PN200A / MMBT200 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) PN200A / MMBT200 — PNP General-Purpose Amplifier Physical Dimensions TO-92 D Figure 14. 3-LEAD, TO-92, MOLDED, STD STRAGHIT LEAD (NO EOL CODE) (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf. © 1997 Fairchild Semiconductor Corporation PN200A / MMBT200 Rev. 1.1.0 www.fairchildsemi.com 5 PN200A / MMBT200 — PNP General-Purpose Amplifier Physical Dimensions (Continued) SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 (0.29) 2 0.95 1.90 2.20 0.60 0.37 0.20 A B 1.90 1.00 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf. © 1997 Fairchild Semiconductor Corporation PN200A / MMBT200 Rev. 1.1.0 www.fairchildsemi.com 6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ mWSaver® OptoHiT¥ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FPS¥ Sync-Lock™ ® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ ®* TinyBoost® TinyBuck® TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its safety or effectiveness. accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 © Fairchild Semiconductor Corporation www.fairchildsemi.com