WILLAS FM120-M+ 8550xLT1 THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. PNP Silicon • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) FEATURE • High current capability, low forward voltage drop. 0.012(0.3) Typ. High surge that capability. •We declare the material of product compliance with RoHS requirements. Guardring for overvoltage protection. •Pb-Free package is available • Ultra high-speed switching. product for packing code suffix ”G” Silicon epitaxial planar chip, metal silicon junction. •RoHS product for packing code suffix of “H” Lead-freefree parts meet environmental standards •Halogen 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 product for packing code suffix "G" • RoHS MARKING DEVICE AND ORDERING INFORMATION Halogen free product for packing code suffix "H" Marking Device Mechanical data Shipping SOT– 23 3000/Tape&Reel 8550PLT1 85P retardant • Epoxy : UL94-V0 rated flame 8550QLT1 1YD • Case : Molded plastic, SOD-123H 3000/Tape&Reel , • Terminals :Plated terminals, solderable per MIL-STD-750 8550RLT1 1YF 3000/Tape&Reel Method 2026 0.031(0.8) Typ. • Polarity : Indicated by cathode band Mounting Position : Any • MAXIMUM RATINGS • WeightRating : Approximated 0.011 gram 0.031(0.8) Typ. Dimensions in inches and (millimeters) Symbol Value Unit Collector-Emitter Voltage V CEO 25 V MAXIMUM CHARACTERISTICS Collector-Base voltage RATINGS AND ELECTRICAL V CBO 40 V Emitter-base Voltagetemperature unless otherwiseVspecified. 5 V Ratings at 25℃ ambient EBO Collector current-continuoun IC 800 mAdc Single phase half wave, 60Hz, resistive of inductive load. 0.040(1.0) 0.024(0.6) COLLECTOR 3 1 BASE For capacitive load, derate current by 20% THERMAL CHARACTERISTICS 2 CharacteristicRATINGS SymbolFM120-MH Max Unit FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL EMITTER (1) Total Device Dissipation FR5 Board P D Marking Code 12 13 14 15 16 18 10 115 120 T A =Recurrent 25 °C 20 225 30 mW40 50 60 80 100 150 200 Maximum Peak Reverse Voltage VRRM Derate above 25 °C 14 1.8 21 mW /°C 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Thermal Resistance, Junction to Ambient R θJA 556 °C/W Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Total Device Dissipation PD Maximum Average Forward Rectified Current IO 1.0 Alumina Substrate, (2) T A = 25 °C 300 mW Derate above 25 °C 2.4 mW /°C Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM ThermalonResistance, Junction to Ambient R θJA 417 °C/W superimposed rated load (JEDEC method) Junction and Storage Temperature T -55 to +150 °C J , T stg 40 Typical Thermal Resistance (Note 2) RΘJA DEVICE MARKING 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 8550QLT1 = 1YD -55 to +150 Operating Temperature Range8550PLT1 =85P TJ ELECTRICAL CHARACTERISTICS (T A = 25TSTG °C unless otherwise noted) Storage Temperature Range Characteristic CHARACTERISTICS OFFCHARACTERISTICS Maximum Forward Voltage at 1.0A DCVoltage Collector-Emitter Breakdown Symbol VF @T A=125℃ RatedEmitter-Base DC Blocking Voltage Breakdown Voltage (I E = 100µA) NOTES: Collector-Base Breakdown voltage 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. (I C= 100µA) 2- Thermal Resistance From Junction to Ambient Collector Cutoff Current (VCB = 35 V) Emitter Cutoff Current (VEB =4V) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-2012-06 Typ Max Unit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum 1.0mA) Reverse Current at @T A=25℃ (I C =Average - 65 to +175 Min IR 0.50 V (BR)CEO 25 V (BR)EBO 5 – V (BR)CBO 40 I CBO I EBO 0.70 – 0.5 10 – 0.85 V – V – – V – – 150 nA – – 150 nA 0.9 0.92 ELECTRONIC WILLASWILLAS ELECTRONIC CORP.COR WILLAS FM120-M+ 8550xLT1 THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. ON CHARACTERISTICS • Low profile surface mounted application in order to optimize board space. Characteristic Symbol Low • DC Currentpower Gain loss, high efficiency. h FE • High current capability, low forward voltage drop. (I C =100mA V CE=1V) • High surge capability. Collector-Emitter Saturation Voltage V CE(S) • Guardring for overvoltage protection. (I C =800mA I B=80mA) • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 P NOTE: * Q R for packing code suffix "G" • RoHS product hFE 100~200 150~300 200~400 Halogen free product for packing code suffix "H" SOD-123H Min Typ 100 – – – Max Unit 0.146(3.7) 0.130(3.3) 00 0.012(0.3) Typ. 0.5 V 0.071(1.8) 0.056(1.4) Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 8550xLT1 THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 optimize board space. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .006(0.15)MIN. MIL-STD-19500 /228 .063(1.60) .047(1.20) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. junction. • Silicon epitaxial planar chip, metal silicon .122(3.10) • Lead-free parts meet environmental standards of .106(2.70) • RoHS product for packing code suffix "G" 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any .080(2.04) • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) .083(2.10) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .110(2.80) Mechanical data 0.031(0.8) Typ. Dimensions in inches and (millimeters) .008(0.20) .003(0.08) .070(1.78) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 .004(0.10)MAX. IO .020(0.50) Peak Forward Surge Current 8.3 ms single half sine-wave .012(0.30) IFSM Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) Storage Temperature Range CHARACTERISTICS 0.037 0.95 TSTG 10 100 115 150 120 200 35 42 56 70 105 140 50 60 80 100 150 200 1.0 30 40 120 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC 18 80 28 -55 to +125 0.037 0.95 TJ Operating Temperature Range 16 60 40 DimensionsCJin inches and (millimeters) Typical Junction Capacitance (Note 1) Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 15 50 RΘJA Typical Thermal Resistance (Note 2) 14 40 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR 0.079 2.0 NOTES: 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.035 2- Thermal Resistance From Junction to Ambient 0.9 0.031 0.8 2012-06 2012- inches mm WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.