MTDN8810AT8

CYStech Electronics Corp.
Spec. No. : C779T8
Issued Date : 2014.04.15
Revised Date : 2015.04.17
Page No. : 1/8
Dual N-Channel Enhancement Mode MOSFET
MTDN8810AT8
BVDSS
ID@TA=25°C, VGS=4.5V
RDSON@VGS=4.5V, ID=5A
RDSON@VGS=2.5V,ID=2.6A
RDSON@VGS=1.8V,ID=1A
Features
20V
5A
17.5mΩ(typ)
25mΩ(typ)
41mΩ(typ)
• 1.8V drive available
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTDN8810AT8
G：Gate S : Source
D : Drain
Ordering Information
Device
Package
Shipping
MTDN8810AT8-0-T6-G
TSSOP-8
(Pb-free lead plating and halogen-free package)
3000 pcs/ Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTDN8810AT8
CYStek Product Specification
Spec. No. : C779T8
Issued Date : 2014.04.15
Revised Date : 2015.04.17
Page No. : 2/8
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current
Symbol
BVDSS
VGS
TA=25°C, VGS=4.5V
TA=70°C, VGS=4.5V
Limits
20
±8
5
4
20
1
0.64
-55~+150
125
ID
IDM
(Note 2)
TA=25°C
Total Power Dissipation (Note 1)
TA=70°C
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient (Note 1)
PD
Tj ; Tstg
Rth,ja
Unit
V
A
W
°C
°C/W
Note : 1.Surface mounted on 1 in ² copper pad of FR-4 board, t≤10sec. The value in any given application depends on the user’s specific
board design.
2.Pulse width ≤300μs, Duty Cycle≤2%
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
20
0.4
-
0.75
17.5
25
41
10
1.0
±20
1
25
28
40
60
-
V
V
509
100
81
5
11
22
18
7
0.9
2.4
-
0.77
14
7
5
20
1.2
-
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
Test Conditions
S
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±8V, VDS=0
VDS=20V, VGS=0
VDS=16V, VGS=0, Tj=125°C
ID=5A, VGS=4.5V
ID=2.6A, VGS=2.5V
ID=1A, VGS=1.8V
VDS=5V, ID=5A
pF
VDS=10V, VGS=0, f=1MHz
ns
VDD=10V, ID=1A, VGS=4.5V, RG=6Ω
nC
VDS=10V, VGS=4.5V, ID=5A
μA
mΩ
A
V
ns
nC
VGS=0V, IS=1.2A
IF=5A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTDN8810AT8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C779T8
Issued Date : 2014.04.15
Revised Date : 2015.04.17
Page No. : 3/8
Typical Characteristics
Static Drain-Source On-State resistance vs Drain Current
Typical Output Characteristics
10000
5V
4.5V
4V
2.5V
18
ID, Drain Current(A)
16
14
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
20
2V
12
10
8
VGS=1.5V
6
4
2
8
2
4
6
VDS, Drain-Source Voltage(V)
100
10
0.001
0
0
VGS=1.5V
VGS=1.8V
VGS=2.5V
VGS=4.5V
VGS=10V
1000
0.1
1
ID, Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Reverse Drain Current vs Source-Drain Voltage
1.2
100
1
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
VSD, Source-Drain Voltage(V)
0.01
Tj=25°C
0.8
Tj=125°C
0.6
0.4
90
ID=5A
80
70
60
50
40
30
20
10
0.2
0
0
2
4
6
8
IDR , Reverse Drain Current (A)
10
0
Drain-Source On-State Resistance vs Junction Tempearture
4
6
8
VGS, Gate-Source Voltage(V)
10
Maximum Drain Current vs Junction Temperature
6
VGS=4.5V, ID=5A
1.6
1.4
1.2
1
0.8
0.6
RDS(ON) @Tj=25°C : 17.5 mΩ typ.
ID, Maximum Drain Current(A)
1.8
R DS(ON), Normalized Static DrainSource On-State Resistance
2
5
4
3
2
1
TA=25°C, VGS=4.5V, RθJA=125°C/W
0
0.4
-75 -50 -25
MTDN8810AT8
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C779T8
Issued Date : 2014.04.15
Revised Date : 2015.04.17
Page No. : 4/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Normalized Threshold Voltage vs Junction
Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
VGS(th) , NormalizedThreshold Voltage
1000
Capacitance---(pF)
Ciss
C oss
100
Crss
ID=250μA
1.4
1.2
1
0.8
0.6
0.4
0.2
10
0.1
1
10
VDS , Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
25
50
75 100 125 150 175
Gate Charge Characteristics
10
5
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance-(S)
0
Tj, Junction Temperature(°C)
1
0.1
VDS=5V
Pulsed
Ta=25°C
0.01
0.001
VDS=10V
ID=5A
4
3
2
1
0
0.01
0.1
ID, Drain Current(A)
1
10
0
1
2
3
4
5
6
Qg, Total Gate Charge(nC)
7
8
Maximum Safe Operating Area
ID, Drain Current (A)
100
RDS(ON)
Limite
10
10μs
100μs
1
1ms
0.1
TA=25°C, Tj=150°C
VGS=4.5V, RθJA=125°C/W
Single Pulse
10ms
100ms
DC
0.01
0.01
MTDN8810AT8
0.1
1
10
VDS, Drain-Source Voltage(V)
100
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C779T8
Issued Date : 2014.04.15
Revised Date : 2015.04.17
Page No. : 5/8
Typical Characteristics(Cont.)
Transient Thermal Response Curves
r(t), Normalized Effective Transient Thermal
Resistance
10
1
0.1
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJA(t)
4.RθJA=125°C/W
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTDN8810AT8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C779T8
Issued Date : 2014.04.15
Revised Date : 2015.04.17
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTDN8810AT8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C779T8
Issued Date : 2014.04.15
Revised Date : 2015.04.17
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTDN8810AT8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C779T8
Issued Date : 2014.04.15
Revised Date : 2015.04.17
Page No. : 8/8
TSSOP-8 Dimension
Marking:
Device
Name
Date
Code
8810AT
□□□□
8-Lead TSSOP-8 Plastic Package
CYStek Package Code: T8
*: Typical
Millimeters
Min.
Max.
1.200
0.020
0.150
0.800
1.000
0.190
0.300
0.090
0.200
2.900
3.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.047
0.001
0.006
0.031
0.039
0.007
0.012
0.004
0.008
0.114
0.122
DIM
E
E1
e
L
H
θ
Millimeters
Min.
Max.
4.300
4.500
6.250
6.550
0.650 (BSC)
0.500
0.700
0.250*
1°
7°
Inches
Min.
Max.
0.169
0.177
0.246
0.258
0.026 (BSC)
0.020
0.028
0.010*
1°
7°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDN8810AT8
CYStek Product Specification