BSS84N3

Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2014.10.21
Page No. : 1/ 8
CYStech Electronics Corp.
50V P-CHANNEL Enhancement Mode MOSFET
BSS84N3
BVDSS
-50V
ID
-130mA
[email protected]=-5V, ID=-100mA 6Ω(typ)
Features
• Low gate charge
• Excellent thermal and electrical capabilities
• Pb-free package
Equivalent Circuit
Outline
SOT-23
BSS84N3
D
G:Gate
S:Source
D:Drain
G
S
Ordering Information
Device
BSS84N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
BSS84N3
CYStek Product Specification
Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2014.10.21
Page No. : 2/ 8
CYStech Electronics Corp.
Absolute Maximum Ratings (Tj=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=-5V
Pulsed Drain Current (Note 1)
Maximum Power Dissipation @ TA=25℃
Thermal Resistance, Junction-to-Ambient
Maximum Lead Temperature for Soldering Purpose, 10 s
Operating Junction and Storage Temperature
VDS
VGS
ID
IDM
PD
Rth,ja
TL
Tj, Tstg
Limits
-50
±20
-130
-520
225
556
260
-55~+150
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Note : 1. Pulse width≤ 10μs, duty cycle≤2%.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
Source-Drain Diode
*IS
*ISM
*VSD
Min.
Typ.
Max.
Unit
Test Conditions
-50
-0.8
50
-
-1.4
6
-2
±10
-0.1
-1
-25
10
V
V
mS
μA
Ω
VGS=0V, ID=-250μA
VDS=VGS, ID=-1mA
VDS=-25V, ID=-100mA
VGS=±20V, VDS=0
VDS=-25V, VGS=0
VDS=-50V, VGS=0
VDS=-50V, VGS=0, Tj=125°C
VGS=-5V, ID=-100mA
-
25
7
2
2.5
2
7.3
3
1.2
-
pF
VDS=-5V, VGS=0, f=1MHz
ns
VDS=-15V, ID=-100mA, VGS=-5V,
RG=3.3Ω
nC
VDS=-40V, ID=-500mA, VGS=-5V
-
-0.85
-130
-520
-1.2
μA
mA
V
VGS=0V, IS=-130mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
BSS84N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2014.10.21
Page No. : 3/ 8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
600
-ID, Drain Current (mA)
500
-VGS=4.5V
400
-VGS=4V
300
-VGS=3.5V
200
-VGS=3V
100
-VGS=2.5V
ID=-250μA,
VGS=0V
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-VGS=5V
1.2
1
0.8
-VGS=2V
0.6
0
0
1
2
3
4
5
6
7
-VDS, Drain-Source Voltage(V)
8
9
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
12
1.2
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(Ω)
11
-VGS=3V
10
-VGS=5V
9
8
7
6
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
5
-VGS=10V
4
0.001
0.01
0.1
-ID, Drain Current(A)
0.2
0
1
R DS(ON) , Normalized Static DrainSource On-State Resistance
18
16
14
12
ID=-100mA
ID=-30mA
8
0.5
2
20
10
0.1
0.2
0.3
0.4
-IDR, Reverse Drain Current (A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON) , Static Drain-Source OnState Resistance(Ω)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
6
4
2
1.8
1.6
1.4
VGS=-5V, ID=-100mA
1.2
1
0.8
VGS=-10V, ID=-100mA
0.6
0.4
0
0
BSS84N3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2014.10.21
Page No. : 4/ 8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
100
Capacitance---(pF)
Ciss
10
C oss
Crss
ID=-250μA
1.4
1.2
1
0.8
0.6
0.4
1
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
-VGS, Gate-Source Voltage(V)
12
8
4
VDS=-40V
ID=-500mA
8
6
4
2
0
0.01
0.1
1
Pulse Width(s)
10
0
100
Maximum Safe Operating Area
1
10ms
100m
1s
TA=25°C, Tj=150°C,
VGS=-5V, RθJA=556°C/W
Single Pulse
1.2
1.8
2.4
Qg, Total Gate Charge(nC)
3
3.6
0.16
-ID, Maximum Drain Current(A)
-ID, Drain Current (A)
1ms
0.1
0.6
Maximum Drain Current vs JunctionTemperature
100μs
0.01
60 80 100 120 140 160
Gate Charge Characteristics
TJ(MAX) =150°C
TA=25°C
RθJA=556°C/W
0
0.001
20 40
10
20
16
0
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Power (W)
1.6
DC
0.001
0.14
0.12
0.1
0.08
0.06
0.04
TA=25°C, VGS=-5V
0.02
0
0.01
BSS84N3
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2014.10.21
Page No. : 5/ 8
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
0.25
600
-VDS=10V
PD, Power Dissipation(W)
-ID, Drain Current (mA)
500
400
300
200
100
0.2
0.15
0.1
0.05
0
0
0
1
2
3
4
-VGS , Gate-Source Voltage(V)
5
0
6
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TC=PDM*ZθJC(t)
4.RθJA=556 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
BSS84N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2014.10.21
Page No. : 6/ 8
Reel Dimension
Carrier Tape Dimension
BSS84N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2014.10.21
Page No. : 7/ 8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BSS84N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2014.10.21
Page No. : 8/ 8
SOT-23 Dimension
Marking:
A
L
3
B
TE
PD
S
2
1
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
G
V
Style: Pin 1.Gate 2.Source 3.Drain
C
D
H
K
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0032
0.0079
0.0118
0.0266
0.0335
0.0453
0.0830
0.1161
0.0098
0.0256
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BSS84N3
CYStek Product Specification