MTBA5N10Q8

Spec. No. : C731Q8
Issued Date : 2013.07.19
Revised Date : 2013.11.05
Page No. : 1/9
CYStech Electronics Corp.
N -Channel Logic Level Enhancement Mode Power MOSFET
MTBA5N10Q8
BVDSS
100V
ID
VGS=10V, ID=3A
3A
123mΩ
VGS=4.5V, ID=2A
130mΩ
RDSON(TYP)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
Symbol
Outline
MTBA5N10Q8
SOP-8
Pin 1
G：Gate
D：Drain
S：Source
Ordering Information
Device
MTBA5N10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA5N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C731Q8
Issued Date : 2013.07.19
Revised Date : 2013.11.05
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=2mH, ID=3A, VGS=10V, VDD=25V
TA=25℃
Total Power Dissipation *3
TA=70℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Limits
100
±20
3.5
2.8
14 *1
20
9
2.5
1.6
-55~+150
Unit
Value
25
50 *3
Unit
°C/W
°C/W
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad.
The value in any given application depends on the user’s specific board design.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
100
1.0
-
1.5
123
127
6
2.5
±100
1
25
145
155
-
-
19
5
3.7
13
15
52
8
-
Unit
Test Conditions
Static
IDSS
RDS(ON)
*1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
MTBA5N10Q8
S
VGS=0, ID=250μA
VDS =VGS, ID=250μA
VGS=±20, VDS=0
VDS =80V, VGS =0
VDS =80V, VGS =0, TJ=85°C
VGS =10V, ID=3A
VGS =4.5V, ID=2A
VDS =5V, ID=3A
nC
ID=3A, VDS=50V, VGS=10V
ns
VDS=50V, ID=1A, VGS=10V, RG=6Ω
V
nA
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
1265
28
18
-
-
0.8
40
75
3
12
1
-
pF
Spec. No. : C731Q8
Issued Date : 2013.07.19
Revised Date : 2013.11.05
Page No. : 3/9
VGS=0V, VDS=30V, f=1MHz
A
V
ns
nC
IS=3A, VGS=0V
IF=3A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTBA5N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C731Q8
Issued Date : 2013.07.19
Revised Date : 2013.11.05
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
ID, Drain Current(A)
12
BVDSS, Normalized Drain-Source
Breakdown Voltage
14
10V, 9V, 8V, 7V, 6V, 5V,
10
8
6
VGS=3V
4
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
2
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=2.5V
VGS=3V
VGS=4.5V
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
VGS=10V
100
0.2
0.01
0.1
1
10
ID, Drain Current(A)
100
0
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
450
R DS(ON), Normalized Static DrainSource On-State Resistance
500
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=3A
400
350
300
250
200
150
VGS=10V, ID=3A
2
1.6
1.2
0.8
RDS(ON) @Tj=25°C : 123mΩ
0.4
100
0
MTBA5N10Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C731Q8
Issued Date : 2013.07.19
Revised Date : 2013.11.05
Page No. : 5/9
Typical Characteristics(Cont.)
NormalizedThreshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
100
C oss
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Gate Charge Characteristics
10
1
0.1
VDS=5V
Pulsed
Ta=25°C
0.01
0.001
VDS=50V
ID=3A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
0
10
5
10
15
Total Gate Charge---Qg(nC)
20
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
4.5
RDS(ON)
Limit
10
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
100μs
1ms
10ms
1
100ms
0.1
TA=25°C, Tj=150°C, VGS=10V
RθJA=50°C/W, Single Pulse
1s
DC
4
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=10V, RθJA=50°C/W
0.5
0
0.01
0.1
MTBA5N10Q8
1
10
100
VDS , Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C731Q8
Issued Date : 2013.07.19
Revised Date : 2013.11.05
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
300
14
VDS=10V
Peak Transient Power (W)
ID, Drain Current (A)
12
10
8
6
4
250
TJ(MAX) =150°C
TA=25°C
θJA=50°C/W
200
150
100
50
2
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
6
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
0.1
0.01
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM -TA=PDM *RθJA(t)
4.RθJA=50°C/W
0.05
0.02
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTBA5N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C731Q8
Issued Date : 2013.07.19
Revised Date : 2013.11.05
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTBA5N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C731Q8
Issued Date : 2013.07.19
Revised Date : 2013.11.05
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTBA5N10Q8
CYStek Product Specification
Spec. No. : C731Q8
Issued Date : 2013.07.19
Revised Date : 2013.11.05
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
Date Code
BA5
N10
□□□□
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1496
0.1575
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.70
5.10
3.80
4.00
5.80
6.20
1.27 *
0.33
0.51
3.74
3.88
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0531
0.0689
0.1889
0.2007
0.0019
0.0098
0.0157
0.0500
0.0067
0.0098
0.0531
0.0610
Millimeters
Min.
Max.
1.35
1.75
4.80
5.10
0.05
0.25
0.40
1.27
0.17
0.25
1.35
1.55
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTBA5N10Q8
CYStek Product Specification