Migration Note - Eon Silicon Solution Inc.

Eon Silicon Solution Inc.
Migration Note
EON Flash EN25F40-100VIP to EN25Q40-100WIP
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
Rev. A, Issue Date: 2009/ 06/08
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
1. INTRODUCTION
The application note introduces how to implement a system design from EON
EN25F40-100VIP Flash to Eon EN25Q40-100WIP Flash.
2. GENERAL FUNCTION COMPARISON TABLE:
2.1 The following table is major features of these two devices.
Features
EN25F40-100VIP
EN25Q40-100WIP
voltage range
2.7 ~ 3.6
2.7 ~ 3.6
SPI frequency
100MHz (standard mode)
100MHz (standard mode)
80MHz @ dual & quad mode
256 Byte
256 Byte
Secured Silicon
Sector region
Sector
Architecture
SPI mode
Minimum
endurance cycle
Package
Uniform 128 sectors of 4K byte / Uniform 128 sectors of 4K byte /
8 block of 64K byte
8 block of 64K byte
Mode 0 / Mode 3
Mode 0 / Mode 3
100K
100K
8-pin 150mil / 200mil SOP
8 contact VDFN
8-pin PDIP
8-pin 150mil / 200mil SOP
8 contact VDFN
8-pin PDIP
2.2 The following table is pin comparison
Pin number
Pin1
Pin2
Pin3
Pin4
Pin5
Pin6
Pin7
Pin8
EN25F40-100VIP
CS#
DO
WP#
VSS
DI
CLK
HOLD#
VCC
EN25Q40-100WIP
CS#
DO(DQ1)
WP#(DQ2)
VSS
DI(DQ0)
CLK
NC(DQ3)
VCC
Note: If customers don’t use Hold# pin function on EN25F40-100VIP, which can be replaced
by EN25Q40-100WIP in standard SPI mode.
EN25F40-100VIP only support general standard SPI mode.
EN25Q40-100WIP can support general standard / dual / quad SPI mode. (Need specific SPI
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
Rev. A, Issue Date: 2009/ 06/08
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
controller)
2.3 The following tables are the different definitions of block protect area (BP0~BP2)
EN25F40-100VIP
EN25Q40-100WIP
Note: RFU = reserved for future use.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
Rev. A, Issue Date: 2009/ 06/08
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
3. HARDWARE CONSIDERATIONS
3.1 ICC comparison
Current
EN25Q40-100WIP
Typ
Read ICC1
EN25F40-100VIP
Unit
Max
Typ
Max
N/A
25
N/A
25
mA
Write ICC2
N/A
18
N/A
15
mA
Standby ICC3
N/A
5.0
N/A
5.0
A
4. SOFTWARE CONSIDERATIONS
Except of memory type, (only difference on 9Fh command) there is no difference in
Manufacture ID, Device ID
4.1
Manufacturer, Memory Type & Device Identification (M7~M0: manufacture ID,
D15~ID0: memory type, ID7~ID0: memory density)
For EN25F40-100VIP
For EN25Q40-100WIP
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
Rev. A, Issue Date: 2009/ 06/08
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
5. PERFORMANCE DIFFERENCES
5.1 ERASE AND PROGRAM PERFORMANCE
The erasing and programming performance comparison.
EN25Q40-100WIP
Parameter
EN25F40-100VIP
Unit
Typ
Max
Typ
Max
Sector Erase Time
0.09
0.3
0.15
0.3
Sec
Block Erase Time
0.4
2
0.8
2
Sec
Chip Erase Time
3.5
10
5
10
Sec
Page Programming Time
1.3
5
1.5
5
ms
NOTE: ERASE FROM “1”
“1”.
5.2 KEY AC PARAMETER PERFORMANCE
EN25Q40-100WIP
EN25F40-100VIP
tCH (serial clock high time)
[email protected] 4ns
[email protected] 4ns
tCL (serial clock low time)
[email protected] 4ns
[email protected] 4ns
tCLCH(serial clock rise time)
[email protected] 0.1V / ns
[email protected] 0.1V / ns
tCLCL(serial clock fall time)
[email protected] 0.1V / ns
[email protected] 0.1V / ns
[email protected] 5ns
[email protected] 5ns
Parameter
tCHSH(CS# active setup / hold
time)
tSHSL(CS# high time)
[email protected]
[email protected]
tDSU(Data in setup time)
[email protected]
[email protected]
tDH(Data in hold time)
[email protected]
[email protected]
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
Rev. A, Issue Date: 2009/ 06/08
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
Revisions List
Revision No Description
Date
A
2009/6/08
Initial Release
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
Rev. A, Issue Date: 2009/ 06/08
©2005 Eon Silicon Solution Inc. www.eonssi.com