Eon Silicon Solution Inc. Application Note EON EN25Q16 vs Winbond W25Q16BV Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 06/24 www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from Winbond W25Q16BV Flash to Eon EN25Q16 Flash. 2. GENERAL FUNCTION COMPARISON TABLE: 2.1 The following table highlights the major features of these two devices. Features Voltage Range Pin to Pin Compatible (Quad mode) SPI frequency (standard / dual / quad mode) Secured Silicon Sector Region EN25Q16 2.7 ~ 3.6 8-pins SOP 150mil / 208mil 8 contact VDFN (5x6mm) 8-pin DIP W25Q16BV 2.7 ~ 3.6 8-pin SOP 150mil / 208mil 8-Pad WSON (5x6mm) 8-Pin DIP 100MHz / 80MHz / 80MHz 104MHz / 80MHz / 80MHz 128 Byte 64 Bit (8 Byte) Sector Architecture Uniform 512 Sectors of 4 K byte 32 blocks of 64 K byte SPI mode Mode 0 / Mode 3 Uniform 512 sectors of 4 K byte 32 blocks of 64 K byte 64 blocks of 32 K byte Mode 0 / Mode 3 Minimum Endurance Cycle 100K 100K Package 8-pins SOP 150mil / 208mil 8 contact VDFN (5x6mm) 8-pin DIP 8-pin SOP 150mil / 208mil 8-Pad WSON (5x6mm) 8-Pin DIP 16-pin SOP 300mil This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 06/24 www.eonssi.com Eon Silicon Solution Inc. 3. HARDWARE CONSIDERATIONS 3.1 ICC comparison EN25Q16 W25Q16BV Read ICC3 Max 25 Max 18 Page Program (PP) ICC4 28 25 mA Sector Erase (SE) ICC6 25 25 mA Standby ICC1 5.0 50 A Current Unit mA 3.2 Pin Configuration Pin number Pin1 Pin2 Pin3 Pin4 Pin5 Pin6 Pin7 Pin8 EN25Q16 CS# DO (DQ1) WP# (DQ2) VSS DI(DQ0) CLK NC(DQ3) VCC W25Q16BV CS# DO(IO1) WP#(IO2) VSS DI(IO0) CLK Hold/(IO3) VCC Note: For the pin Configuration of 8 pin SOP and VDFN (5x6mm) package, Eon EN25Q16 Flash is the same as Winbond W25Q16BV Flash when using Quad Mode function only. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 06/24 www.eonssi.com Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS 4.1 Manufacturer, Memory Type & Device Identification (M7~M0: manufacture ID, D15~ID0: memory type, ID7~ID0: memory density) comparison. For EN25Q16 OP Code (M7-M0) (ID15-ID0) ABh (ID7-ID0) 14h 90h 1Ch 9Fh 1Ch 14h 3015h For W25Q16BV This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 06/24 www.eonssi.com Eon Silicon Solution Inc. 4.2. Instruction Set Comparison 4.2.1 Different Read Status Register command EN25Q16 Only support 05h command. (for register bit 7~ bit0) W25Q16BV Support 05h (for register bit 7~ bit0) and 35h. (for register bit 8 ~ bit 15) 4.2.2 Different Read Status Register length EN25Q16 8 bit. (bit7 ~ bit 0) W25Q16BV 16 bit. (Bit 15 ~ bit0) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 06/24 www.eonssi.com Eon Silicon Solution Inc. 4.2.3 Quad page program command EN25Q16 No support. W25Q16BV Support. 4.2.4 Different block erase command EN25Q16 Only support D8h command. (for 64K byte) W25Q16BV Support 52h (for 32K byte) and D8h commands. (for 64K Byte) 4.2.5 Erase suspend / resume commands EN25Q16 No support. W25Q16BV Support. 4.2.6 Continue read mode reset commands (for Dual / Quad operation) EN25Q16 No support. W25Q16BV Support. 4.2.7 Fast read quad output command EN25Q16 No support. W25Q16BV Support. 4.2.8 Word read for quad I/O command EN25Q16 No support. W25Q16BV Support. 4.2.9 Octal word read for quad I/O command EN25Q16 No support. W25Q16BV Support. 4.2.10 Different block protect definition EN25Q16 : This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 06/24 www.eonssi.com Eon Silicon Solution Inc. W25Q16BV : This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 7 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 06/24 www.eonssi.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 ERASE AND PROGRAM PERFORMANCE The erasing and programming performance comparison. EN25Q16 Parameter W25Q16BV Unit Typ Max Typ Max 4 KB Sector Erase Time 0.09 0.3 0.03 0.2 sec 64KB Block Erase Time 0.4 2 0.15 1 sec Chip (Bulk) Erase Time 12 35 3 10 sec Page Programming Time 1.3 5 0.7 3 ms 5.2 KEY AC PARAMETER PERFORMANCE EN25Q16 W25Q16BV tCH (serial clock high time) Min @ 4ns Min @ 4.5ns tCL (serial clock low time) Min @ 4ns Min @ 4.5ns tCLCH(serial clock rise time) Min @ 0.1V / ns Min @ 0.1V / ns tCLCL(serial clock fall time) Min @ 0.1V / ns Min @ 0.1V / ns Min@ 5ns Min @ 5ns Min @ 15ns for Read Min @ 7ns for Read Min @ 50ns for Write Min @ 40ns for Write tDSU(Data in setup time) Min @ 2ns Min @ 1.5ns tDH(Data in hold time) Min @ 5ns Min @ 4ns Parameter tCHSH(CS# active setup / hold time) tSHSL(CS# high time) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 8 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 06/24 www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2009/6/24 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 9 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 06/24 www.eonssi.com