AP9974GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Single Drive Requirement
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
BVDSS
60V
RDS(ON)
10.5mΩ
ID
G
74A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
G
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9974GJ) are
available for low-profile applications.
G
D
D
S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
74
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
48
A
1
IDM
Pulsed Drain Current
300
A
PD@TC=25℃
Total Power Dissipation
104
W
Linear Derating Factor
0.8
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Units
1.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
200908202
AP9974GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
60
-
-
V
VGS=10V, ID=45A
-
-
10.5
mΩ
VGS=4.5V, ID=30A
-
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
50
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=30A
-
43
69
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
31
-
nC
VDS=30V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
48
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
42
-
ns
tf
Fall Time
RD=1Ω
-
67
-
ns
Ciss
Input Capacitance
VGS=0V
-
3180 5100
pF
Coss
Output Capacitance
VDS=25V
-
495
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
460
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1
1.5
Ω
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
45
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
40
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9974GH/J-HF
250
120
o
T C =25 C
100
ID , Drain Current (A)
ID , Drain Current (A)
200
5.0V
150
4.5V
100
80
60
40
V G = 3.0 V
V G =3.0V
50
20
0
0
0
1
2
3
0
4
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
2.0
I D = 30 A
I D = 45 A
V G =10V
T C =25 o C
Normalized RDS(ON)
10
RDS(ON) (mΩ)
10 V
7 .0V
5.0 V
4.5 V
o
T C =150 C
10V
7 .0V
8
6
1.6
1.2
0.8
trr
0.4
4
2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
o
Qrr
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
50
1.6
o
Normalized VGS(th) (V)
40
o
T j =150 C
T j =25 C
IS(A)
30
20
1.2
0.8
0.4
10
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9974GH/J-HF
f=1.0MHz
14
10000
I D = 30 A
V DS = 30 V
V DS = 38 V
V DS = 48 V
10
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
1000
C oss
C rss
4
2
0
100
0
20
40
60
80
100
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
ID (A)
100us
1ms
10
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Qrr
1
Fig 10. Effective Transient Thermal Impedance
100
o
V DS =5V
o
T j =25 C
VG
T j =150 C
ID , Drain Current (A)
80
QG
4.5V
60
QGS
QGD
40
20
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4