AP9998GS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Single Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
100V
RDS(ON)
25mΩ
ID
G
44A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for switching power
applications.
S
TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
44
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
28
A
1
IDM
Pulsed Drain Current
160
A
PD@TC=25℃
Total Power Dissipation
104
W
PD@TA=25℃
Total Power Dissipation
3.13
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
Value
Units
1.2
℃/W
40
℃/W
1
201105091
AP9998GS-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
100
-
-
V
VGS=10V, ID=24A
-
-
25
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=24A
-
36
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=24A
-
30
48
nC
Qgs
Gate-Source Charge
VDS=80V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
13
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
10
-
ns
tr
Rise Time
ID=24A
-
40
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
20
-
ns
tf
Fall Time
VGS=10V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
1450 2320
pF
Coss
Output Capacitance
VDS=25V
-
270
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
105
-
pF
Gate Resistance
f=1.0MHz
-
1.2
2.4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=24A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
60
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
160
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9998GS-HF
150
100
10V
9.0V
8.0V
o
T C =25 C
125
10V
9.0V
8.0V
7.0V
o
T C = 150 C
ID , Drain Current (A)
ID , Drain Current (A)
80
7.0V
100
75
V G =6.0V
50
60
V G =6.0V
40
20
25
0
0
0
4
8
12
16
0
20
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
16
Fig 2. Typical Output Characteristics
2.8
1.4
I D =1mA
I D =24A
V G =10V
2.4
1.2
Normalized RDS(ON)
Normalized BVDSS (V)
8
V DS , Drain-to-Source Voltage (V)
1
2.0
1.6
1.2
0.8
0.8
0.4
0.6
-50
0
50
100
-50
150
0
T j , Junction Temperature ( o C)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
30
1.8
Normalized VGS(th) (V)
I D =250uA
20
IS(A)
T j =150 o C
T j =25 o C
10
1.2
0.6
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9998GS-HF
f=1.0MHz
2000
I D = 24 A
V DS =80V
10
1600
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
1200
6
800
4
400
2
C oss
C rss
0
0
0
10
20
30
1
40
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
100
Operation in this
area limited by
RDS(ON)
100us
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
10
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
V DS =5V
VG
ID , Drain Current (A)
80
QG
10V
60
QGS
QGD
40
T j =150 o C
20
o
T j =25 C
Charge
o
T j = -40 C
Q
0
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4