ACE3401A P-Channel Enhancement Mode Field Effect Transistor Description The ACE3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product ACE3401A is Pb-free (meets ROHS & Sony 259 specifications). Features • • • • • VDS (V) = -30V ID = -4.0 A (VGS = -10V) RDS(ON) < 50mΩ (VGS = -10V) R DS(ON)< 65mΩ (VGS = -4.5V) R DS(ON)< 120mΩ (VGS = -2.5V) Absolute Maximum Ratings ( TA=25℃, unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TA=25 ℃ TA=70 ℃ Continuous Drain CurrentNOTEA Pulsed Drain Current ID NOTEB TA=25 ℃ TA=70 ℃ Junction and Storage Temperature Range Maximum -30 ±12 -4.0 Units V V -3.5 -25 1.4 A IDM Power DissipationNOTEA PD W 1 -55 to 150 TJ, TSTG ℃ Packaging Type SOT-23 Package Marking and Ordering Information Device Marking 3401 Device Device Package Reel Size Tape width Quantity ACE3401A SOT-23 Ø180mm 8mm 3000 units ACE3401A XX + H Halogen - free Pb - free BM : SOT-23 VER 1.1 1 ACE3401A Electrical Characteristics (TA=25 P-Channel Enhancement Mode Field Effect Transistor )℃u n less oth erw ise n o ted Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Conditions Min ID=-250μA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250μA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.2A Static Drain-Source On-Resistance Gate resistance -0.7 -25 7 VGS=-4.5V, VDS=-15V, ID=-4A tr Turn-On Rise Time tD(off) tf trr Qrr Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/μS Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/μS Units V -1 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime Max -30 -1 -5 ±100 -1.3 42 50 TJ=125°C VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A gFS Forward Transconductance VDS=-5V, ID=-5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Pulsed Body-Diode CurrentB DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V,VDS=-15V, Coss Output Capacitance f=1MHz Crss Reverse Transfer Capacitance Rg Typ VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=6Ω 53 80 11 -0.75 75 65 120 -1 -2.2 -30 μA nA V A mΩ mΩ mΩ S V A A 954 115 77 pF pF pF 6 Ω 9.4 2 3 6.3 nC nC nC μS 3.2 μS 38.2 12 20.2 11.2 μS μS μS nC Note: A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 ℃ VER 1.1 2 ACE3401A P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics Figure 1 On-Region Characteristics Figure 3 On-Resistance vs. Drain Current and Gate Voltage Figure 5 On-Resistance vs. Gate-Source Voltage Figure 2 Transfer Characteristics Figure 4 On-Resistance vs. Junction Temperature Figure 6 Body-Diode Characteristics VER 1.1 3 ACE3401A P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics Figure 7 Gate-Charge Characteristics Figure 9 Maximum Forward Biased Safe Operating Area (Note E) Figure 8 Capacitance Characteristics Figure 10 Single Pulse Power Rating Junction-to- Ambient (Note E) Figure 11 Normalized Maximum Transient Thermal Impedance VER 1.1 4 ACE3401A P-Channel Enhancement Mode Field Effect Transistor Thermal Characteristics Parameter Maximum Junction-to-AmbientA Symbol t ≤ 10S Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-LeadC Steady-State RθJA RθJL Typ Max Units 65 90 ℃/W 85 125 ℃/W 43 60 ℃/W Packing Information SOT-23 VER 1.1 5 ACE3401A P-Channel Enhancement Mode Field Effect Transistor Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6