DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2756TB MIXER+OSCILLATOR SILICON MMIC FOR FREQUENCY DOWNCONVERTER OF L BAND WIRELESS RECEIVER DESCRIPTION The µ PC2756TB is a silicon monolithic integrated circuit designed as L band frequency downconverter for receiver stage of wireless systems. The IC consists of mixer and local oscillator. This IC operates at 3 V. This IC is manufactured using Renesas 20GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Wideband operation : fRFin = 0.1 to 2.0 GHz • Supply voltage : VCC = 2.7 to 3.3 V • Low current consumption : ICC = 6.0 mA TYP. @VCC = 3.0 V • Minimized carrier leakage : Due to double balanced mixer • Equable output impedance : Single-end push-pull IF amplifier • Equable temperature-drift oscillator : Differential amplifier type oscillator : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) • High-density surface mounting APPLICATIONS • Data carrier up to 2.0 GHz MAX. • Wireless LAN up to 2.0 GHz MAX. ORDERING INFORMATION Part Number µPC2756TB-E3 Remark Package Marking 6-pin super minimold C1W Supplying Form • Embossed tape 8 mm wide • 1, 2, 3 pins face the perforation side of the tape • Qty 3 kpcs/reel To order evaluation samples, please contact your nearby sales office. Part number for sample order: µPC2756TB-A Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with your nearby sales office for availability and additional information. Document No. P12807EJ3V0DS00 (3rd edition) Date Published February 2001 N CP(K) The mark shows major revised points µPC2756TB PIN CONNECTIONS 3 2 1 Pin No. Pin Name 1 RFinput 2 GND 3 LO1 4 LO2 5 VCC 6 IFoutput (Bottom View) C1W (Top View) 4 4 3 5 5 2 6 6 1 PRODUCT LINE-UP (TA = +25°C, V CC = 3.0 V, ZS = ZL = 50 Ω) Parameter Part Number µPC2756T VCC ICC (V) (mA) 2.7 to 3.3 6.0 0.9 GHz 1.6 GHz 0.9 GHz 1.6 GHz NF NF CG CG (dB) (dB) (dB) (dB) 14 14 10 13 fRFin fIFout fOSC (GHz) (GHz) (GHz) Package 0.1 to 2.0 10 to 300 to 2.2 µPC2756TB 6-pin minimold 6-pin super minimold Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. INTERNAL BLOCK DIAGRAM Mixer IF amplifier RF input IF output Oscillator LO1 LO2 VCC GND Remark Oscillator tank circuit must be externally attached to LO1 and LO2 pins. 2 Data Sheet P12807EJ3V0DS µPC2756TB µPC2756TB LOCATION EXAMPLE IN THE SYSTEM RX BPF µPC2756TB BPF 1st MIXER µPC2745TB PLL frequency synthesizer Reference osillator LPF VT This document is to be specified for µPC2756TB. For the other part number mentioned in this document, please refer to the data sheet of each part number. Data Sheet P12807EJ3V0DS 3 µPC2756TB PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage Note (V) 1 RFinput – 1.2 2 GND 0 – 3 LO1 – 1.2 4 LO2 – 1.2 5 VCC 2.7 to 3.3 – 6 IFoutput – 1.7 Function and Application Equivalent Circuit This pin is RF input for mixer designed as double balance type. This circuit contributes to suppress spurious signal with minimum LO and bias power consumption. Also this symmetrical circuit can keep specified performance insensitive to process-condition distribution. This pin must be externally coupled to front stage with capacitor for DC cut. VCC 1 Must be connected to the system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. (Track length should be kept as short as possible.) These pins are both base-collector of oscillator. This oscillator is designed as differential amplifier type. 3 pin and 4 pin should be externally equipped with tank resonator circuit in order to oscillate with feedback loop. Also this symmetrical circuit can keep specified performance insensitive to processcondition distribution. Each pin must be externally coupled to tank circuit with capacitor for DC cut. VCC 3 4 Supply voltage 3.0 ± 0.3 V for operation. Must be connected bypass capacitor (e.g. 1 000 pF) to minimize ground impedance. This pin is output from IF buffer amplifier designed as single-ended push-pull type. This pin is assigned for emitter follower output with low-impedance. This pin must be externally coupled to next stage with capacitor for DC cut. VCC 6 Note Pin voltage is measured at VCC = 3.0 V APPLICATION This IC is guaranteed on the test circuit constructed with 50 Ω equipment and transmission line. This IC, however, does not have 50 Ω input/output impedance, but electrical characteristics such as conversion gain and intermodulation distortion are described herein on these conditions without impedance matching. So, you should understand that conversion gain and intermodulation distortion at input level will vary when you improve VS of RF input with external circuit (50 Ω termination or impedance matching). External circuits of the IC are explained in a following application note. • To RF and IF port : Application Note “Usage and Application Characteristics of µPC2757T, µPC2758T and µPC8112T, 3-V Power Supply, 1.9-GHz Frequency Down Converter ICs for Cellular/Cordless Telephone and Portable Wireless Communication” (P11997E) 4 Data Sheet P12807EJ3V0DS µPC2756TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Rating Unit Supply Voltage VCC TA = +25 °C 5.5 V Power Dissipation PD Mounted on double-sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C 270 mW Operating Ambient Temperature TA –40 to +85 °C Storage Temperature Tstg –55 to +150 °C RECOMMENDED OPERATING RANGE Parameter Supply Voltage Symbol MIN. TYP. MAX. Unit VCC 2.7 3.0 3.3 V ELECTRICAL CHARACTERISTICS (TA = +25° C, VCC = 3.0 V, ZS = ZL = 50 Ω, Test circuit) Parameter Symbol Conditions MIN. TYP. MAX. Unit Circuit Current ICC No signals 3.5 6.0 8.0 mA RF Input Frequency fRFin CG ≥ (CG1 –3 dB), fIFout = 150 MHz constant 0.1 – 2.0 GHz IF Output Frequency fIFout CG ≥ (CG1 –3 dB), fRFin = 0.9 GHz constant 10 – 300 MHz Conversion Gain 1 CG1 fRFin = 0.9 GHz, fIFout = 150 MHz, PRFin = –40 dBm 11 14 17 dB Conversion Gain 2 CG2 fRFin = 1.6 GHz, fIFout = 20 MHz, PRFin = –40 dBm 11 14 17 dB SSB Noise Figure 1 SSB•NF1 fRFin = 0.9 GHz, fIFout = 150 MHz, SSB mode – 10 13 dB SSB Noise Figure 2 SSB•NF2 fRFin = 1.6 GHz, fIFout = 20 MHz, SSB mode – 13 16 dB Saturated Output Power 1 PO(sat) 1 fRFin = 0.9 GHz, fIFout = 150 MHz, PRFin = –10 dBm –11 –8 – dBm Saturated Output Power 2 PO(sat) 2 fRFin = 1.6 GHz, fIFout = 20 MHz, PRFin = –10 dBm –15 –12 – dBm STANDARD CHARACTERISTICS FOR REFERENCE (Unless otherwise specified, TA = +25° C, VCC = 3.0 V, ZS = ZL = 50 Ω) Parameter Symbol Output 3rd Order Intercept Point OIP3 Conditions Reference Unit fRFin = 0.8 to 2.0 GHz, fIFout = 0.1 GHz, Cross point IP. +4.0 dBm Phase Noise PN fOSC = 1.9 GHzNote –68 dBc/Hz LO Leakage at RFinput Pin LOrf fLOin = 0.8 to 2.0 GHz –35 dB LO Leakage at IFoutput Pin LOif fLOin = 0.8 to 2.0 GHz –23 dB V-Di: 1SV210, L: 7 nHNote 2.2 GHz Maximum Oscillating Frequency fOSCMAX. Note On application circuit example. Data Sheet P12807EJ3V0DS 5 µPC2756TB SCHEMATIC SUPPLEMENT FOR RF, IF SPECIFICATIONS RF Frequency Response Conversion Gain CG (dB) fIFout = 150 MHz PRFin = − 40 dBm CG1 CG1−3 dB Guaranteed gain level 0.1 0.9 2.0 RF Input Frequency fRFin (GHz) IF Frequency Response Conversion Gain CG (dB) fRFin = 0.9 GHz PRFin = − 40 dBm CG1 CG1−3 dB Guaranteed gain level 10 150 300 IF Output Frequency fIFout (GHz) 6 Data Sheet P12807EJ3V0DS MIN. TYP. MAX. Unit CG1 11 14 17 dB CG1-3 dB 8 11 14 dB µPC2756TB TEST CIRCUIT (Top View) Signal Generator 1 000 pF 1 000 pF 3 C2 2 LO1 GND LO2 VCC C3 3 300 pF 5 Signal Generator 3V C4 1 000 pF 1 50 Ω 50 Ω 4 RFinput IFoutput 6 3 300 pF C5 C1 50 Ω Spectram Analyzer ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD LO1 LO2 C 2 C3 GND RF input VCC C1 C4 C5 COMPONENT LIST IF output Notes Value C1 to C3 1 000 pF C4, C5 3 300 pF (1) 35 × 42 × 0.4 mm double copper clad polyimide board. (2) Back side: GND pattern (3) Solder plated on pattern (4) (5) : Through holes pattern should be removed on this testing. Data Sheet P12807EJ3V0DS 7 µPC2756TB APPLICATION CIRCUIT EXAMPLE (Top View) VT bias 15 kΩ L R1 5 nH ∼ 30 nH C2 1 000 pF 15 kΩ R2 HVU12 C3 1 000 pF 3 LO1 LO2 4 2 GND VCC 5 Signal Generator 3V C4 1 000 pF 1 50 Ω 3 300 pF RFinput IFoutput 6 3 300 pF C5 C1 50 Ω Spectram Analyzer ILLUSTRATION OF THE APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD R2 VT C3 C2 R1 GND RF input VCC C1 C4 C5 COMPONENT LIST IF output Notes Value C1 to C3 1 000 pF C4, C5 3 300 pF R1, R2 15 kΩ L 5 nH to 30 nH V-Di HVU12 (1) 35 × 42 × 0.4 mm double copper clad polyimide board. (2) Back side: GND pattern (3) Solder plated on pattern (4) (5) : Through holes pattern should be removed on this testing. The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 8 Data Sheet P12807EJ3V0DS µPC2756TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C) − ON THE TEST CIRCUIT − CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 10 Circuit Current ICC (mA) Circuit Current ICC (mA) 8 6 4 2 2 1 4 3 5 6 4 2 0 −40 6 −20 0 +20 +40 +60 +80 +100 Supply Voltage VCC (V) Operating Ambient Temperature TA (°C) CONVERSION GAIN, SSB NOISE FIGURE vs. RF INPUT FREQUENCY CONVERSION GAIN vs. IF OUTPUT FREQUENCY 30 CG VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V 20 15 PRFin = –55 dBm PL0in = –10 dBm 10 fIFout = 150 MHz (Low-Side LO) 5 0.5 +20 +10 0 −10 NF 1.5 15 10 5 2.0 1 2 5 10 20 50 100 RF Input Frequency fRFin (GHz) IF Output Frequency fIFout (MHz) IF OUTPUT POWER, IM3 vs. RF INPUT POWER IF OUTPUT POWER, IM3 vs. RF INPUT POWER fRFin1 = 900 MHz fRFin2 = 905 MHz fLOin = 800 MHz VCC = 3.0 V −20 −30 −40 −50 −60 −70 −80 20 0 1.0 −60 −40 −20 0 IF Output Power PIFout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 10 SSB Noise Figure SSB•NF (dB) 15 VCC = 3.0 V PRFin = –55 dBm PL0in = –10 dBm fRFin = 1.6 GHz IF coupling = 0.1 µ F 25 Conversion Gain CG (dB) 20 IF Output Power PIFout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Conversion Gain CG (dB) No signal VCC = 3.0 V 8 0 25 10 No signal +20 +10 0 −10 300 fRFin1 = 2.000 GHz fRFin2 = 2.005 GHz fLOin = 1.900 GHz VCC = 3.0 V −20 −30 −40 −50 −60 −70 −80 −60 −40 −20 0 RF Input Power PRFin (dBm) RF Input Power PRFin (dBm) Data Sheet P12807EJ3V0DS 9 µPC2756TB − ON THE APPLICATION CIRCUIT − LO LEAKAGE AT RFinput PIN vs. LOCAL INPUT FREQUENCY Local Leakage at RFinput Pin LOrf (dBm) Local Leakage at IFoutput Pin LOif (dBm) LO LEAKAGE AT IFoutput PIN vs. LOCAL INPUT FREQUENCY 0 −10 −20 −30 −40 −50 VCC = 3.0 V PL0in = −10 dBm −60 0.8 1.0 1.2 1.4 1.6 0 −10 −20 −30 −40 −50 −60 1.4 VCO OSCILLATION FREQUENCY vs. TUNING VOLTAGE VCO Oscillation Frequency fVCO (GHz) 2.5 L = 7 nH 2.0 L = 15 nH 1.5 L = 30 nH L = 50 nH 0.5 0 5 10 15 20 25 Tuning Voltage Vtu (V) 10 1.6 1.8 Local Input Frequency fLOin (GHz) Local Input Frequency fLOin (GHz) 1.0 VCC = 3.0 V PL0in = –10 dBm Data Sheet P12807EJ3V0DS 2.0 µPC2756TB − ON THE APPLICATION CIRCUIT − ATTEN 10 dB RL −40.0 dBm VCO Phase Noise (fVCO = 774.425 8 MHz center) MKR −53.16 dB 10 dB / 10.0 kHz VCC = 3.0 V Vtune = 3.0 V TA = +25°C Monitor at pin 6 MKR 10.0 kHz −53.16 dB CENTER 774.425 8 MHz RBW 1.0 kHz ++ VBW 100 Hz ATTEN 10 dB RL –40.0 dBm SPAN 100.0 kHz SWP 3.0 s VCO Phase Noise (fVCO = 1.639 194 2 GHz center) MKR –40.34 dB 10 dB / 10.2 kHz VCC = 3.0 V Vtune = 3.0 V TA = +25°C Monitor at pin 6 MKR 10.2 kHz –40.34 dB CENTER 1.639 194 2 GHz RBW 1.0 kHz ++ VBW 100 Hz SPAN 100.0 kHz SWP 3.0 s Remark The graphs indicate nominal characteristics. Data Sheet P12807EJ3V0DS 11 µPC2756TB S-PARAMETERS (VCC = 3.0 V) RFinput Pin 1 2 5 6 3 4 : 100 MHz : 500 MHz 900 MHz 3 : 4 : 1 500 MHz 5 : 1 900 MHz 6 : 3 000 MHz 1 2 519.8 Ω − j 1.1 Ω 59.3 Ω − j 281.0 Ω 38.3 Ω − j 157.0 Ω 31.5 Ω − j 90.1 Ω 28.5 Ω − j 67.9 Ω 25.7 Ω − j 31.7 Ω START STOP 0.100000000 GHz 3.100000000 GHz IFoutput Pin 5 2 3 4 1 : 50 MHz : 80 MHz 3 : 130 MHz 4 : 240 MHz 5 : 300 MHz 1 2 12 22.5 Ω + j 6.1 Ω 24.2 Ω + j 11.3 Ω 30.2 Ω + j 16.6 Ω 42.6 Ω + j 17.5 Ω 46.6 Ω + j 15.6 Ω START STOP 0.050000000 GHz 0.300000000 GHz Data Sheet P12807EJ3V0DS µPC2756TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 Data Sheet P12807EJ3V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.1 MIN. 0.9±0.1 2.0±0.2 1.25±0.1 13 µPC2756TB NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as to minimize ground impedance (to prevent abnormal oscillation). (3) Keep the track length between the ground pins as short as possible. (4) Connect a bypass capacitor (example 1 000 pF) to the VCC pin. (5) To construct oscillator, tank circuit must be externally attached to pin 3 and pin 4. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: NoneNote IR35-00-3 VPS Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: NoneNote VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit: NoneNote WS60-00-1 Partial Heating Pin temperature: 300°C or below Time: 3 seconds or less (per side of device) Exposure limit: NoneNote – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 14 Data Sheet P12807EJ3V0DS NOTICE 1. 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