MIMMG75J120UZ 1200V 75A IGBT Module RoHS Compliant FEATURES · Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · Electrically Isolated by DBC Ceramic · Popular SOT-227 Package APPLICATIONS · Invertor · Convertor · Welder · SMPS and UPS · Induction Heating ABSOLUTE MAXIMUM RATINGS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Values Unit VCES Collector - Emitter Voltage 1200 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 105 A TC=80°C 75 A ICpuls Pulsed Collector Current TC=25°C, tp=1ms 210 A TC=80°C, tp=1ms 150 A Ptot Power Dissipation 625 W TJ Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C Visol Insulation Test Voltage 3000 V RthJC Junction-to-Case Thermal Resistance 0.20 K /W Torque Module-to-Sink Recommended（M4） 0.7～1.1 N· m Torque Module Electrodes Recommended（M4） 0.7～1.1 N· m 26.5 g Weight AC, t=1min MIMMG75J120UZ ELECTRICAL CHARACTERISTICS Symbol VGE(th) VCE(sat) Parameter TC=25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit 5 6.2 7 V Gate - Emitter Threshold Voltage VCE=VGE, IC=3mA Collector - Emitter IC=75A, VGE=15V, TJ=25°C 1.8 V Saturation Voltage IC=75A, VGE=15V, TJ=125°C 2.0 V VCE=1200V, VGE=0V, TJ=25°C 0.2 VCE=1200V, VGE=0V, TJ=125°C 2 ICES Collector Leakage Current IGES Gate Leakage Current VCE=0V, VGE=±20V Qge Gate Charge VCC=600V, IC=75A, VGE=±15V Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr td(off) 0.5 mA mA -100 100 nA nC 5.52 nF 0.4 nF 0.26 nF VCC=600V, IC=75A 150 ns Rise Time RG =15Ω,VGE=±15V 65 ns Turn - off Delay Time TJ=25°C 440 ns tf Fall Time Inductive Load 55 ns td(on) Turn - on Delay Time VCC=600V, IC=75A 160 ns tr Rise Time RG =15Ω,VGE=±15V 65 ns td(off) Turn - off Delay Time TJ=125°C 500 ns tf Fall Time Inductive Load 70 ns Eon Turn - on Switching Energy TJ=25°C 7.45 mJ RG =15Ω TJ=125°C 10.3 mJ Eoff Turn - off Switching Energy VGE=±15V TJ=25°C 4.9 mJ Inductive Load TJ=125°C 7.8 mJ VCE=25V, VGE=0V, f =1MHz VCC=600V, IC=75A 150 150 125 125 100 100 TJ =25°C IC (A) IC (A) 780 75 VCE=20V 75 TJ =125°C 50 50 25 25 TJ =125°C 0 0 1.5 2.5 3.5 2 3 VCE(sat)（V） Figure1. Typical Output characteristics 0.5 1 0 TJ =25°C 0 2 4 6 8 10 12 14 VGE（V） Figure2. Typical Transfer characteristics MIMMG75J120UZ 30 60 40 VCC=600V RG=15ohm VGE=±15V TJ =125°C 20 30 Eon 20 Eoff 10 0 0 15 10 0 Eoff 70 30 40 50 60 RG（ohm） Figure4. Switching Energy vs. Gate Resistor 50 1000 Eon 5 75 100 125 150 175 IC（A） Figure3. Switching Energy vs. Collector Current 25 VCC=600V IC=75A VGE=±15V TJ =125°C 25 Eon Eoff (mJ) Eon Eoff (mJ) 50 0 10 20 1000 td(off) 100 td(on) t (ns) t (ns) td(off) tf td(on) 100 tf tr tr 10 0 20 VCC=600V RG=15ohm VGE=±15V TJ =125°C 10 70 30 40 50 60 RG（ohm） Figure6. Switching Times vs. Gate Resistor 60 80 100 120 140 IC（A） Figure5. Switching Times vs. Collector Current 40 0 10 VCC=600V IC=75A TJ =25°C Cies C (nF) VGE (V) 15 10 VGE =0V f=1MHz 1 Coes Cres 5 0 0 20 10 25 20 VCC=600V IC=75A VGE=±15V TJ =125°C 0.3 0.4 0.5 0.6 0.7 Qg（µC） Figure7. Gate Charge characteristics 0.1 0.2 0.1 0 5 10 15 20 25 30 VCE（V） Figure8. Typical Capacitances vs. VCE 35 MIMMG75J120UZ 250 1200 1000 800 150 ICsc (A) ICpuls (A) 200 100 50 0 0 600 400 TJ =150°C TC =25°C VGE =15V 200 TJ =150°C TC =25°C VGE =15V tsc≤10µs 200 0 400 600 800 1000 1200 1400 VCE（V） Figure10. Short Circuit Safe Operating Area 600 800 1000 1200 1400 VCE（V） Figure9. Reverse Biased Safe Operating Area 400 150 0 200 1 TJ =150°C VGE ≥15V 125 10-1 ZthJC (K/W) IC(A) 100 75 50 Duty 0.5 0.2 0.1 0.05 Single Pulse 10-2 10-3 25 0 0 50 75 100 125 150 TC Case Temperature(°C) Figure11. Rated Current vs. TC 25 175 10-4 -4 10 10-3 10-1 10-2 1 Rectangular Pulse Duration (seconds) Figure12. Transient Thermal Impedance Dimensions in mm Figure13. Package Outlines