MIMMG300DR170B

MIMMG300DR170B
1700V 300A IGBT Module
RoHS Compliant
FEATURES
□ Ultra Low Loss
□ High Ruggedness
□ High Short Circuit Capability
□ VCE(sat) With Positive Temperature Coefficient
□ With Fast Free-Wheeling Diodes
□ Passivation: alpha-si and silicon nitride plus polyimide
APPLICATIONS
□ Inverter
GD Series Module
□ Convertor
□ Welder
□ SMPS and UPS
□ Induction Heating
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
1700
V
IGBT
VCES
Collector - Emitter Voltage
VGE=0V, TVj≥25°C
VGES
Gate - Emitter Voltage
±20
V
IC
DC Collector Current
300
A
ICM
Peak Collector Current
600
A
Ptot
Power Dissipation Per IGBT
1250
W
TVj
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
1700
V
TC=25°C 180° rect.
300
A
TC=95°C 180° rect.
200
A
420
A
Limited by TVjmax
AC, t=1min
Free-Wheeling Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMS)
RMS Forward Current
IFSM
Non-Repetitive Surge
TVj=45°C,VR=0V,t=10ms,Sine
2000
A
Forward Current
TVj=45°C,VR=0V,t=8.3ms,Sine
2200
A
MIMMG300DR170B
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
5.3
5.8
6.3
V
IGBT
VGE(th)
VCE(sat)
ICES
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
VCE=VGE, IC=20mA
IC=300A, VGE=15V, TVj=25°C
2.30
V
IC=300A, VGE=15V, TVj=125°C
2.65
V
IC=300A, VGE=15V, TVj=150°C
2.75
V
VCE=1700V, VGE=0V, TVj=25°C
0.5
mA
VCE=1700V, VGE=0V, TVj=125°C
2.5
mA
VCE=1700V, VGE=0V, TVj=150°C
4.0
mA
500
nA
IGES
Gate Leakage Current
VCE=0V, VGE=±15V, TVj=125°C
Qge
Gate Charge
VCE=900V, IC=300A , VGE=±15V
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
tr
td(off)
tf
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Eon
Turn - on Switching Energy
Eoff
Turn - off Switching Energy
ISC
Short Circuit Current
VCE=25V, VGE=0V, f =1MHz
-500
1.8
µC
20
nF
1.06
nF
0.74
nF
VCC=900V,
TVj =25°C
450
ns
IC=300A,
TVj =125°C
480
ns
RG =7.5Ω,
TVj =150°C
490
ns
VGE=±15V,
TVj =25°C
385
ns
Inductive Load
TVj =125°C
405
ns
TVj =150°C
405
ns
VCC=900V,
TVj =25°C
910
ns
IC=300A,
TVj =125°C
1020
ns
RG =7.5Ω,
TVj =150°C
1060
ns
VGE=±15V,
TVj =25°C
420
ns
Inductive Load
TVj =125°C
485
ns
TVj =150°C
495
ns
VCC=900V,IC=300A,
TVj =125°C
72
mJ
RG =7.5Ω,
TVj =150°C
84
mJ
VGE=±15V,
TVj =125°C
138
mJ
Inductive Load
TVj =150°C
146
mJ
980
A
IF=300A , VGE=0V, TVj =25°C
2.2
V
IF=300A , VGE=0V, TVj =150°C
2.45
V
tpsc≤10µS , VGE=15V, TVj=150°C
VCC=1300V, VCEMCHIP≤1700V
Free-Wheeling Diode
VF
Forward Voltage
IRRM
Max. Reverse Recovery Current
IF=300A , VR=1000V
235
A
Qrr
Reverse Recovery Charge
diF/dt=-1000A/μs
33
µC
Erec
Reverse Recovery Energy
TVj =125°C
48
mJ
MIMMG300DR170B
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.10
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.18
K /W
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M6）
3
5
N· m
Weight
300
g
600
600
VGE=15V
500
500
TVj=25°C
400
TVj =125°C
300
IC (A)
IC (A)
400
200
200
100
100
0
0
2.0
1.0
3.0
0
5.0
4.0
TVj=125°C
300
0
VCE（V）
Figure1. Typical Output characteristics
800
VCC=900V
IC=300A
VGE=±15V
TVj =150°C
700
600
Eon
Eon Eoff (mJ)
Eon Eoff (mJ)
800
2
3
4
5
6
VCE（V）
Figure2. Typical Output characteristics
1000
VCC=900V
RG=7.5Ω
VGE=±15V
TVj =150°C
1
600
Eon
500
400
Eoff
400
300
Eoff
200
200
100
0
0
300
600
900
IC（A）
Figure3. Switching Energy vs. Collector Current
0
0
10
20
30
40
50
60
RG（Ω）
Figure4. Switching Energy vs. Gate Resistor
MIMMG300DR170B
100
20
V
VCC=900V
Cies
15
VCC=1300V
VGE =0V
f=1MHz
10
C (nF)
VGE (V)
TVJ=25°C
10
TVJ =125°C
5
0
Coes
1
0
800
400
1200
1600
0.1
2000
0
5
10
15
20
25
30
35
VCE（V）
Figure6. Typical Capacitances vs. VCE
Qg（nC）
Figure5. Gate Charge characteristics
700
600
600
500
500
400
TVj =25°C
400
IF (A)
ICpuls (A)
Cres
IC=300A
TVj =25°C
300
200
TVj=125°C
VGE =15V
100
0
0
200
TVj =125°C
100
0
800
1200
1600 1800
VCE（V）
Figure7. Reverse Biased Safe Operating Area
400
2.0 2.5 3.0 3.5 4.0
VF（V）
Figure8. Diode Forward Characteristics
0
0.5 1.0 1.5
1
80
RG=7.5Ω
VCE=900V
TVj =125°C
70
60
Diode
0.1
ZthJC (K/W)
50
Erec (mJ)
300
40
30
IGBT
0.01
20
10
0
0
100
200
300
400
500
IF (A)
Figure9. Switching Energy vs. IF
600
0.001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance
1
MIMMG300DR170B
Figure11. Circuit Diagram
Dimensions (mm)
Figure12. Package Outline