MIMMG400K120U6UN

MIMMG400K120U6UN
1200V 400A IGBT Module
RoHS Compliant
FEATURES
· Ultra Low Loss
· High Ruggedness
· High Short Circuit Capability
· Positive Temperature Coefficient
· With Fast Free-Wheeling Diodes
· 5K Ω Gate Protected Resistance Inside
APPLICATIONS
· Inverter
· Convertor
· Welder
· SMPS and UPS
· Induction Heating
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
IGBT
VCES
Collector - Emitter Voltage
1200
V
VGES
Gate - Emitter Voltage
±20
V
IC
DC Collector Current
TC=25°C
600
A
TC=65°C
400
A
ICpuls
Pulsed Collector Current
TC=25°C, tp=1ms
1200
A
TC=65°C, tp=1ms
800
A
Ptot
Power Dissipation Per IGBT
1785
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
1200
V
TC=25°C
600
A
TC=65°C
400
A
AC, t=1min
Free-Wheeling Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
800
A
Non-Repetitive Surge
TVj =45°C , t=10ms, Sine
2550
A
Forward Current
TVj =45°C , t=8.3ms, Sine
2850
A
IFSM
MIMMG400K120U6UN
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
4.5
5.5
6.5
V
IGBT
VGE(th)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=16mA
Collector - Emitter
IC=400A, VGE=15V, TVj =125°C
3.2
V
Saturation Voltage
IC=400A, VGE=15V, TVj =125°C
3.85
V
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TVj =25°C
IGES
Gate Leakage Current
VCE=0V, VGE=±20V
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
td(off)
VCE(sat)
-400
5
mA
400
nA
1.3
Ω
4.2
µC
26
nF
1.8
nF
VCC=600V, IC=400A
100
ns
Rise Time
RG =2.5Ω,VGE=±15V
60
ns
Turn - off Delay Time
TVj =125°C
530
ns
tf
Fall Time
Inductive Load
40
ns
td(on)
Turn - on Delay Time
VCC=600V, IC=400A
110
ns
tr
Rise Time
RG =2.5Ω,VGE=±15V
70
ns
td(off)
Turn - off Delay Time
TVj =125°C
550
ns
tf
Fall Time
Inductive Load
50
ns
Eon
Turn - on Switching Energy
VCC=600V, IC=400A TVj =25°C
28
mJ
RG =2.5Ω
TVj =125°C
38
mJ
Eoff
Turn - off Switching Energy
VGE=±15V
TVj =25°C
19
mJ
Inductive Load
TVj =125°C
24
mJ
IF=400A , VGE=0V, TVj =25°C
1.95
V
IF=400A , VGE=0V, TVj =125°C
1.95
V
VCC=600V, IC=400A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
Free-Wheeling Diode
VF
Forward Voltage
IRRM
Max. Reverse Recovery Current
IF=400A , VR=600V
450
A
Qrr
Reverse Recovery Charge
diF/dt=-4000A/μs
50
µC
Erec
Reverse Recovery Energy
TVj =125°C
18
mJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.07
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.12
K /W
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M6）
2.5
5
N· m
Torque
Module Electrodes
Recommended（M4）
0.7
1.1
N· m
Weight
325
g
MIMMG400K120U6UN
800
800
VGE =15V
600
600
IC (A)
IC (A)
TVj =25°C
400
TVj =125°C
200
0
0
200
0
2
3
4
5
6
VCE（V）
Figure1. Typical Output Characteristics
1
TVj =125°C
400
0
200
800
160
320
Eon Eoff (mJ)
IC (A)
TVj =125°C
480
TVj =25°C
80
Eoff
40
5
100
6
0
7
5
10
900
VCE=600V
RG=2.5Ω
VGE=±15V
TVj =125°C
800
80
600
40
IC (A)
Eon
60
400
RG=2.5Ω
VGE=±15V
TVj =125°C
Eoff
200
20
0
0
0
25
30
20
15
RG（Ω）
Figure4. Switching Energy vs. Gate Resistor
9
10
11 12
8
VGE（V）
Figure3. Typical Transfer characteristics
120
Eon Eoff (mJ)
Eon
120
160
0
3
4
5
6
VCE（V）
Figure2. Typical Output Characteristics
2
VCE=600V
IC=400A
VGE=±15V
TVj =125°C
VCE =20V
640
1
400
600
800
IC（A）
Figure5. Switching Energy vs. Collector Current
200
0
0
600 800 1000 1200 1400
VCE（V）
Figure6. Reverse Biased Safe Operating Area
200 400
MIMMG400K120U6UN
40
800
TVj =125°C
400
Erec (mJ)
IF (A)
32
TVj =25°C
600
200
0
24
16
8
0
0
2
3
4
VF（V）
Figure7. Diode Forward Characteristics
1
2.5
5
7.5
10
12.5
1
RG=2.5Ω
VCE=600V
TVj =125°C
ZthJC (K/W)
40
0
RG（Ω）
Figure8. Switching Energy vs. Gate Resistor
50
30
20
0.1
0.01
10
0
0
0.001
0.001
400
600
800
IF (A)
Figure9. Switching Energy vs. Forward Current
200
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance of Diode
0.1
ZthJC (K/W)
Erec (mJ)
IF=400A
VCE=600V
TVj =125°C
0.01
0.001
0.001
0.01
0.1
1
Rectangular Pulse Duration (seconds)
Figure11. Transient Thermal Impedance of IGBT
10
MIMMG400K120U6UN
Dimensions in mm
Figure12. Package Outlines