JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS CJCD2007 DFNWB2×3-6L-C Dual N-Channel MOSFET V(BR)DSS ID RDS(on)MAX 20 mΩ@10V 22 mΩ@4.5V 20V 24mΩ@3.8V 7A 26 mΩ@2.5V 35mΩ@1.8V DESCRIPTION The CJCD2007 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 7 A Pulsed Drain Current IDM * 30 A Thermal Resistance from Junction to Ambient RθJA 125 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ Continuous Drain Current *Repetitive rating：Pluse width limited by junction temperature. www.cj-elec.com 1 D,May,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±8V, VDS = 0V ±10 µA 1 V VGS =10V, ID =7A 20 mΩ VGS =4.5V, ID =6.6A 22 mΩ VGS =3.8V, ID =6A 24 mΩ VGS =2.5V, ID =5.5A 26 mΩ VGS =1.8V, ID =5A 35 mΩ Gate threshold voltage (note 1) Drain-source on-resistance (note 1) VGS(th) RDS(on) VDS =VGS, ID =250µA Forward tranconductance (note 1) gFS VDS =5V, ID =7A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V 20 V 0.4 9 S 1 V DYNAMIC PARAMETERS (note 2) 1150 pF 185 pF Crss 145 pF Total gate charge Qg 15 nC Gate-source charge Qgs 0.8 nC Gate-drain charge Qgd 3.2 nC td(on) 6 ns VGS=5V,VDD=10V, 13 ns RL=1.35Ω,RGEN=3Ω 52 ns 16 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =7A SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 D,May,2015 7\SLFDO&KDUDFWHULVWLFV Transfer Characteristics Output Characteristics 20 22 2.2V Pulsed VDS=5V 20 Pulsed DRAIN CURRENT DRAIN CURRENT 1.8V 12 8 15 ID (A) 16 ID (A) 2.0V 1.5V 10 Ta=100℃ 5 Ta=25℃ 4 VGS=1.2V 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 80 5 VDS 0 6 0 1 (V) 2 3 GATE TO SOURCE VOLTAGE ID RDS(ON) 80 —— VGS (V) VGS Ta=25℃ Ta=25℃ Pulsed (mΩ) 40 ON-RESISTANCE ON-RESISTANCE 60 RDS(ON) 60 RDS(ON) (mΩ) Pulsed VGS=2V VGS=10V 20 40 ID=3A 20 0 0 0 4 8 12 DRAIN CURRENT ID 16 0 20 2 4 6 GATE TO SOURCE VOLTAGE (A) 10 (V) IS —— VSD Threshold Voltage 10 0.80 8 VGS Ta=25℃ IS (A) 0.75 SOURCE CURRENT THRESHOLD VOLTAGE VTH (V) Pulsed 0.70 ID=250uA 0.65 1 0.1 0.60 0.55 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 0.01 0.4 125 (℃ ) 0.6 0.8 SOURCE TO DRAIN VOLTAGE 3 1.0 1.2 VSD (V) D,May,2015 C Symbol A A1 A3 D E D1 E1 k b e L Dimensions In Millimeters Min. Max. 0.700 0.800 0.000 0.050 0.203REF. 1.950 2.050 2.950 3.050 1.400 1.600 1.600 1.800 0.200MIN. 0.200 0.300 0.500TYP. 0.300 0.400 Dimensions In Inches Min. Max. 0.028 0.031 0.000 0.002 0.008REF. 0.077 0.081 0.116 0.120 0.063 0.055 0.063 0.071 0.008MIN. 0.008 0.012 0.020TYP. 0.012 0.016 C 4 D,May,2015 DFNWB2X3-6L Tape and Reel www.cj-elec.com 5 D,May,2015