b972fbb998558fc65381fd1401d54a8e

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS
CJCD2007
DFNWB2×3-6L-C
Dual N-Channel MOSFET
V(BR)DSS
ID
RDS(on)MAX
20 [email protected] 22 [email protected]
20V
[email protected]
7A 26 [email protected]
[email protected]
DESCRIPTION
The CJCD2007 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
Equivalent Circuit
MARKING:
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
7
A
Pulsed Drain Current
IDM *
30
A
Thermal Resistance from Junction to Ambient
RθJA
125
℃/W
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
TL
260
℃
Continuous Drain Current
*Repetitive rating:Pluse width limited by junction temperature.
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MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =16V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS =±4.5V, VDS = 0V
±1
µA
VGS =±8V, VDS = 0V
±10
µA
1
V
VGS =10V, ID =7A
20
mΩ
VGS =4.5V, ID =6.6A
22
mΩ
VGS =3.8V, ID =6A
24
mΩ
VGS =2.5V, ID =5.5A
26
mΩ
VGS =1.8V, ID =5A
35
mΩ
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
Forward tranconductance (note 1)
gFS
VDS =5V, ID =7A
Diode forward voltage(note 1)
VSD
IS=1A, VGS = 0V
20
V
0.4
9
S
1
V
DYNAMIC PARAMETERS (note 2)
1150
pF
185
pF
Crss
145
pF
Total gate charge
Qg
15
nC
Gate-source charge
Qgs
0.8
nC
Gate-drain charge
Qgd
3.2
nC
td(on)
6
ns
VGS=5V,VDD=10V,
13
ns
RL=1.35Ω,RGEN=3Ω
52
ns
16
ns
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
VDS =10V,VGS =0V,f =1MHz
VDS =10V,VGS =4.5V,ID =7A
SWITCHING PARAMETERS(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
tf
Notes :
1.
Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.
2.
Guaranteed by design, not subject to production testing.
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7\SLFDO&KDUDFWHULVWLFV
Transfer Characteristics
Output Characteristics
20
22
2.2V
Pulsed
VDS=5V
20
Pulsed
DRAIN CURRENT
DRAIN CURRENT
1.8V
12
8
15
ID
(A)
16
ID
(A)
2.0V
1.5V
10
Ta=100℃
5
Ta=25℃
4
VGS=1.2V
0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
80
5
VDS
0
6
0
1
(V)
2
3
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
80
——
VGS
(V)
VGS
Ta=25℃
Ta=25℃
Pulsed
(mΩ)
40
ON-RESISTANCE
ON-RESISTANCE
60
RDS(ON)
60
RDS(ON)
(mΩ)
Pulsed
VGS=2V
VGS=10V
20
40
ID=3A
20
0
0
0
4
8
12
DRAIN CURRENT
ID
16
0
20
2
4
6
GATE TO SOURCE VOLTAGE
(A)
10
(V)
IS —— VSD
Threshold Voltage
10
0.80
8
VGS
Ta=25℃
IS (A)
0.75
SOURCE CURRENT
THRESHOLD VOLTAGE
VTH
(V)
Pulsed
0.70
ID=250uA
0.65
1
0.1
0.60
0.55
25
50
75
AMBIENT TEMPERATURE
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100
Ta
0.01
0.4
125
(℃ )
0.6
0.8
SOURCE TO DRAIN VOLTAGE
3
1.0
1.2
VSD (V)
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C
Symbol
A
A1
A3
D
E
D1
E1
k
b
e
L
Dimensions In Millimeters
Min.
Max.
0.700
0.800
0.000
0.050
0.203REF.
1.950
2.050
2.950
3.050
1.400
1.600
1.600
1.800
0.200MIN.
0.200
0.300
0.500TYP.
0.300
0.400
Dimensions In Inches
Min.
Max.
0.028
0.031
0.000
0.002
0.008REF.
0.077
0.081
0.116
0.120
0.063
0.055
0.063
0.071
0.008MIN.
0.008
0.012
0.020TYP.
0.012
0.016
C
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DFNWB2X3-6L Tape and Reel
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