4cf21d6e44468633e725a4a108d163e4

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL8205
Dual N-Channel MOSFET
V(BR)DSS
ID
RDS(on)MAX
[email protected] 19 V
SOT-23-6L
6A
[email protected] FEATURE
z TrenchFET Power MOSFET
z Excellent RDS(on)
z Low Gate Charge
z High Power and Current Handing Capability
z Surface Mount Package
APPLICATION
z Battery Protection
z Load Switch
z Power Management
Equivalent Circuit
MARKING
G1
D1,D2
6
1
S1
G2
5
4
2
3
D1,D2
S2
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
19
V
Gate-Source Voltage
VGS
±10
V
Continuous Drain Current
ID
6
A
Pulsed Drain Current (note 1)
IDM
25
A
Thermal Resistance from Junction to Ambient (note 2)
RθJA
357
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
TL
260
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
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Ta =25 ℃ unless otherwise specified
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERICTISCS
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =18V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±10V, VDS = 0V
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
Drain-source on-resistance (note 3)
RDS(on)
19
V
1
µA
±100
nA
0.9
V
VGS =4.5V, ID =6A
25
mΩ
VGS =2.5V, ID =5A
32
mΩ
Forward tranconductance (note 3)
gFS
VDS =5V, ID =4.5A
Diode forward voltage (note 3)
VSD
IS=1.25A, VGS = 0V
0.5
10
S
1.2
V
DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS =8V,VGS =0V,f =1MHz
800
pF
155
pF
125
pF
18
ns
SWITCHING CHARACTERICTISCS (note 4)
Turn-on delay time
Turn-on rise time
td(on)
tr
VDD=10V,VGS=4V,
5
ns
td(off)
ID=1A,RGEN=10Ω
43
ns
tf
20
ns
Total Gate Charge
Qg
11
nC
Gate-Source Charge
Qgs
2.3
nC
Gate-Drain Charge
Qgd
2.5
nC
Turn-off delay time
Turn-off fall time
VDS =10V,VGS =4.5V,ID=4A
Notes :
1.Repetitive rating:Pluse width limited by maximum junction temperature
2.Surface Mounted on FR4 board,t≤10 sec.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
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Output Characteristics
Transfer Characteristics
12
20
Ta=25℃
VGS=2.5V,3V,4V,5V
VDS=3V
Pulsed
Pulsed
10
ID
(A)
VGS=2V
12
DRAIN CURRENT
ID
DRAIN CURRENT
(A)
16
8
Ta=25℃
8
Ta=100℃
6
4
VGS=1.5V
4
2
0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
VDS
0
0.0
5
(V)
0.5
1.0
1.5
GATE TO SOURCE VOLTAGE
2.0
VGS
2.5
(V)
RDS(ON) —— VGS
RDS(ON) —— ID
30
300
Ta=25℃
Pulsed
Pulsed
(m)
RDS(ON)
VGS=2.5V
ON-RESISTANCE
20
ON-RESISTANCE
RDS(ON)
(m)
250
VGS=4.5V
ID=6A
200
150
Ta=100℃
100
10
50
Ta=25℃
0
1
2
3
4
DRAIN CURRENT
5
ID
6
7
0
(A)
1
2
3
GATE TO SOURCE VOLTAGE
4
VGS
5
(V)
Threshold Voltage
IS —— VSD
8
1.2
Pulsed
VTH
1
Ta=100℃
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
1.0
Ta=25℃
0.1
0.8
ID=250uA
0.6
0.4
0.2
0.01
0.0
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
1.2
VSD (V)
1.4
1.6
0.0
25
50
75
JUNCTION TEMPERATURE
100
Tj
125
(℃ )
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SOT-23-6L Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
θ
Dimensions In Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
SOT-23-6L Suggested Pad Layout
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SOT-23-6L Tape and Reel
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