SSF3639C

SSF3639C
30V Complementary MOSFET
DESCRIPTION
The SSF3639C uses advanced trench
technology MOSFET to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFET may be used
in power inverters, and other applications.
N-channel
P-channel
Schematic Diagram
GENERAL FEATURES
●N-Channel
VDS = 30V,ID = 6.3A
RDS(ON) < 35.5mΩ @ VGS=4.5V
RDS(ON) < 22mΩ @ VGS=10V
●P-Channel
VDS = -30V,ID = -5A
RDS(ON) < 87mΩ @ VGS=-4.5V
RDS(ON) < 52mΩ @ VGS=-10V
Marking and Pin Assignment
●High Power and current handing capability
●Lead free product
●Surface Mount Package
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
3639C
SSF3639C
SOP-8
Ø330mm
ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted)
Parameter
Symbol
Tape Width
Quantity
12mm
2500 units
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
6.3
-5
20
-20
1.6
2.0
-55 To 150
-55 To 150
N-Ch
62.5
P-Ch
62.5
Continuous Drain Current
TA=25℃
ID
TA=70℃
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
IDM
TA=25℃
PD
TA=70℃
Operating Junction and Storage Temperature Range
TJ,TSTG
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
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Page 1 of 4
Min
Typ
℃/W
Max
Unit
Rev.1.1
SSF3639C
30V Complementary MOSFET
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
VGS=0V ID=250μA
N-Ch
30
VGS=0V ID=-250μA
P-Ch
-30
VDS=24V,VGS=0V
N-Ch
1
VDS=-24V,VGS=0V
P-Ch
-1
N-Ch
±100
P-Ch
±100
VGS=±20V,VDS=0V
V
μA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
N-Ch
1
1.9
3
VDS=VGS,ID=-250μA
P-Ch
-1
-1.8
-3
VGS=10V, ID=6.3A
N-Ch
19
22
VGS=-10V, ID=-5.0A
P-Ch
39
52
VGS=4.5V, ID=5.5A
N-Ch
25
35.5
VGS=-4.5V, ID=-4A
P-Ch
62
87
VDS=10V,ID=6.3A
N-Ch
10
VDS=-5V,ID=-5A
P-Ch
8
N-Ch
620
P-Ch
700
N-Ch
118
P-Ch
120
N-Ch
85
P-Ch
75
N-Ch
8
P-Ch
9
N-Ch
4
P-Ch
5
N-Ch
22
P-Ch
30
N-Ch
4
P-Ch
15
N-Ch
10
P-Ch
14.7
N-Ch
2
P-Ch
2
N-Ch
2
P-Ch
3.8
V
mΩ
S
DYNAMIC PARAMETERS
Input Capacitance
Clss
N-Ch
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Coss
P-Ch
VGS=0V, VDS=-15V, f=1MHz
Reverse Transfer Capacitance
Crss
pF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
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Qgd
N-Ch
VDS=15V,
VGS=10V,RGEN=6Ω,ID=1A
P-Ch
VDD=-15V, ID=-1A,
VGS=-10V,RGEN=6Ω
N-Ch
VDS=15V,ID=6.3A,
VGS=10V
P-Ch
VDS=-15V,ID=-5A,
VGS=-10V
Page 2 of 4
nS
nS
nS
nS
nC
nC
nC
Rev.1.1
SSF3639C
30V Complementary MOSFET
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.3A
N-Ch
0.8
1.2
V
VGS=0V,IS=-1A
P-Ch
-0.8
-1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 3 of 4
Rev.1.1
SSF3639C
30V Complementary MOSFET
SOP-8 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT: mm)
NOTES:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.CT
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact
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Page 4 of 4
Rev.1.1