SSF2302 20V N-Channel MOSFET D DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G S Schematic Diagram GENERAL FEATURES ● VDS = 20V,ID = 2.4A RDS(ON) < 115mΩ @ VGS=2.5V RDS(ON) < 60mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product ● Surface Mount Package D 3 2302 G 1 2 S Marking and pin Assignment APPLICATIONS ●Battery protection ●Load switch ●Power management SOT-23 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 2302 SSF2302 SOT-23 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ID (25℃) Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range ID (70℃) Limit Unit 20 V ±8 V 2.4 1. A 10 A 7 IDM PD TJ,TSTG A 0.9 W -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com RθJA Page 1 of 6 140 ℃/W Rev.2.0 SSF2302 20V N-Channel MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 20 1 μA V Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.95 1.2 V Drain-Source On-State Resistance RDS(ON) VGS=2.5V, ID=3.1A 70 115 mΩ VGS=4.5V, ID=3.6A 45 60 mΩ VDS=5V,ID=3.6A 8 S 300 PF 120 PF 80 PF ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 0.65 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V,VGS=0V, F=1.0MHz SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-Off Delay Time Turn-Off Fall Time td(off) VDD=10V, RL = 2.8 Ω VGS=4.5V,RGEN=6Ω, ID=3.6A, tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V,ID=3.6A,VGS=4.5V 7 15 nS 55 80 nS 16 60 nS 10 25 nS 4.0 10 nC 0.65 nC 1.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=0.94A 0.76 1.2 V 0.94 A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 6 Rev.2.0 SSF2302 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS td(on) Vdd Vgs Rgen D Vout toff tf td(off) 90% Rl Vin ton tr VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS www.goodark.com Figure 6 Drain-Source On-Resistance Page 3 of 6 Rev.2.0 SSF2302 ID- Drain Current (A) Normalized On-Resistance 20V N-Channel MOSFET TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 9 RDS(ON) vs VGS Figure 10 Capacitance vs VDS Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Vsd Source-Drain Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge www.goodark.com Figure 12 Source- Drain Diode Forward Page 4 of 6 Rev.2.0 SSF2302 ID- Drain Current (A) 20V N-Channel MOSFET VDS Drain-Source Voltage (V) Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 5 of 6 Rev.2.0 SSF2302 20V N-Channel MOSFET SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact。 www.goodark.com Page 6 of 6 Rev.2.0