GDSSF2300 V2.1

GDSSF2300
D
DESCRIPTION
The SSF2300 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
G
S
Schematic diagram
GENERAL FEATURES
● VDS = 20V,ID = 2.4A
RDS(ON) < 110mΩ @ VGS=2.5V
RDS(ON) < 55mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Battery protection
●Load switch
●Power management
SOT-23 top view
Marking and pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2300
SSF2300
SOT-23
Ø180mm
8 mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID (25℃)
Drain [email protected] Current-Pulsed (Note 1)
ID (70℃)
Operating Junction and Storage Temperature Range
Unit
20
V
±8
V
2.4
1.
A
10
A
A
7
IDM
PD
TJ,TSTG
Maximum Power Dissipation
Limit
0.9
W
-55 To 150
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
℃/W
140
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
20
1
μA
V
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
±100
nA
VGS(th)
VDS=VGS,ID=250μA
1.2
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Suzhou Goodark Electronics Co., Ltd
Version 1.0
0.65
0.95
GDSSF2300
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
VGS=2.5V, ID=3.1A
68
110
mΩ
VGS=4.5V, ID=3.6A
42
55
mΩ
VDS=5V,ID=3.6A
8
S
300
PF
120
PF
80
PF
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=10V,VGS=0V,
F=1.0MHz
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
VDD=10V, RL = 2.8 Ω
VGS=4.5V,RGEN=6Ω,
ID=3.6A,
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=3.6A,VGS=4.5V
7
15
nS
55
80
nS
16
60
nS
10
25
nS
4.0
10
nC
0.65
nC
1.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VGS=0V,IS=0.94A
0.94
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Suzhou Goodark Electronics Co., Ltd
0.76
Version 1.0
1.2
V
A
GDSSF2300
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
td(on)
Vdd
Vgs
Rgen
D
Vout
toff
tf
td(off)
90%
Rl
Vin
ton
tr
VOUT
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF2300
ID- Drain Current (A)
Normalized On-Resistance
Figure 5 Output CHARACTERISTICS
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 11 Gate Charge
Suzhou Goodark Electronics Co., Ltd
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
Version 1.0
ID- Drain Current (A)
GDSSF2300
Vds Drain-Source Voltage (V)
Normalized Effective Transient
Thermal Impedance
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF2300
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact。
Suzhou Goodark Electronics Co., Ltd
Version 1.0