SSF2616E

SSF2616E
20V Dual N-Channel MOSFET
DESCRIPTION
The SSF2616E uses advanced trench technology to
provide excellent R DS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
GENERAL FEATURES
● VDS = 20V,ID = 7A
RDS(ON) < 30mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 23mΩ @ VGS=4V
RDS(ON) < 22mΩ @ VGS=4.5V
Schematic Diagram
ESD Rating:2000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●Battery protection
●Load switch
●Power management
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
SSF2616E
SSF2616E
SOP-8
Ø330mm
12mm
2500 units
ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V DS
20
V
Gate-Source Voltage
V GS
±12
V
ID(25℃)
7
A
ID(70℃)
5
A
IDM
25
A
PD
1.5
W
TJ,TSTG
-55 To 150
℃
R θJA
83
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
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Page 1 of 6
Rev.1.0
SSF2616E
20V Dual N-Channel MOSFET
ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±4.5V,VDS=0V
±200
nA
VGS=±10V,VDS=0V
±10
uA
0.75
1.2
V
VGS=4.5V, ID=6.5A
16.5
22
mΩ
VGS=4V, ID=6A
17
23
mΩ
VGS=3.1V, ID=5.5A
19
26
mΩ
VGS=2.5V, ID=5.5A
22
30
mΩ
VDS=10V,ID=6.5A
6.6
S
600
PF
330
PF
PF
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
0.6
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
V DS=8V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
140
Turn-on Delay Time
td(on)
10
20
nS
Turn-on Rise Time
tr
11
25
nS
35
70
nS
30
60
nS
10
15
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
V DS=10V,ID=7A,
VGS=4.5V
2.3
nC
3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.5A
0.84
1.2
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 6
Rev.1.0
V
SSF2616E
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
td(on)
Vdd
Vgs
Rgen
D
toff
tf
td(off)
90%
Rl
Vin
ton
tr
Vout
VOUT
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2: Switching Waveforms
PD Power(W)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
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Figure 4 Drain Current
Rdson On-Resistance(mΩ)
ID- Drain Current (A)
Figure 3 Power Dissipation
Page 3 of 6
Rev.1.0
SSF2616E
20V Dual N-Channel MOSFET
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 6 Drain-Source On-Resistance
ID- Drain Current (A)
Normalized On-Resistance
Figure 5 Output CHARACTERISTICS
Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Figure 7 Transfer Characteristics
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
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Is- Reverse Drain Current (A)
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Page 4 of 6
Rev.1.0
SSF2616E
20V Dual N-Channel MOSFET
Vsd Source-Drain Voltage (V)
Qg Gate Charge (nC)
Figure 12 Source- Drain Diode Forward
ID- Drain Current (A)
Figure 11 Gate Charge
Vds Drain-Source Voltage (V)
Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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Page 5 of 6
Rev.1.0
SSF2616E
20V Dual N-Channel MOSFET
SOP-8 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact
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Page 6 of 6
Rev.1.0