SSF3606

SSF3606
30V N-Channel MOSFET
D
DESCRIPTION
The SSF3606 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
G
S
Schematic Diagram
GENERAL FEATURES
● VDS = 30V,ID =15A
RDS(ON) < 8.5mΩ @ VGS=4.5V
RDS(ON) < 6mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
SSF3606
SSF3606
SOP-8
Ø330mm
12mm
2500 units
ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V DS
30
V
Gate-Source Voltage
V GS
±20
V
ID(25℃)
15
A
ID(70℃)
12.5
A
IDM
60
A
PD
2
W
TJ,TSTG
-55 To 150
℃
R θJA
62.5
℃/W
Drain [email protected] Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
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BVDSS
VGS=0V ID=250μA
Page 1 of 6
30
V
Rev.1.0
SSF3606
30V N-Channel MOSFET
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
V DS=VGS,ID=250μA
1.7
2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=11.5A
6.4
8.5
mΩ
VGS=10V, ID=15A
4.8
6
mΩ
VDS=5V,ID=11A
25
S
3100
PF
550
PF
ON CHARACTERISTICS (Note 3)
Forward Transconductance
g FS
1.3
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
C lss
V DS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
C oss
Reverse Transfer Capacitance
C rss
300
PF
Turn-on Delay Time
td(on)
19
nS
Turn-on Rise Time
tr
11
nS
60
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDS=15V,VGS=10V,RGEN=6Ω
ID=1A
td(off)
Turn-Off Fall Time
tf
25
nS
Total Gate Charge
Qg
50
nC
Gate-Source Charge
Qgs
8
nC
Gate-Drain Charge
Qgd
15
nC
Body Diode Reverse Recovery Time
Trr
20
nS
Body Diode Reverse Recovery Charge
Qrr
5
nC
VDS=15V,ID=15A,V GS=10V
IF=15A, dI/dt=100A/µs
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V SD
VGS=0V,IS=2.8A
0.75
1.2
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 6
Rev.1.0
V
SSF3606
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
D
toff
tf
td(off)
90%
Rl
Vin
ton
tr
td(on)
Vout
VOUT
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 4 Drain Current
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
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Figure 6 Drain-Source On-Resistance
Page 3 of 6
Rev.1.0
SSF3606
ID- Drain Current (A)
Normalized On-Resistance
30V N-Channel MOSFET
Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Figure 7 Transfer Characteristics
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)
Vsd Source-Drain Voltage (V)
Qg Gate Charge (nC)
Figure 11 Gate Charge
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Figure 12 Source- Drain Diode Forward
Page 4 of 6
Rev.1.0
SSF3606
ID- Drain Current (A)
30V N-Channel MOSFET
Vds Drain-Source Voltage (V)
Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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Page 5 of 6
Rev.1.0
SSF3606
30V N-Channel MOSFET
SOP-8 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 6 of 6
Rev.1.0