20131106091942 5185

WTPA24A60BW
ect
ode Thyri
st
or
Bi-Dir
ire
ctiional Tri
Trio
rist
sto
Fea
eattures
■ Repetitive Peak off-State Voltage:600V
■R.M.S On-State Current(IT(RMS) =24A
■ Low on-state voltage: VTM=1.55V(Max.)@ IT=11A
■ High Commutation dV/dt.
ri
pti
on
General Desc
escri
rip
tio
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
By using an internal ceramic pad, the WTPA series provides
Voltage insulated tab (rated at 2500V RMS) complying with
UL standards (file ref.:E347423)
um Ratin
gs (TJ=25℃ unless otherwise specified)
Absolute Maxim
imu
ing
Symbol
Parame
ametter
Value
Units
600
V
24
A
250/260
A
340
A2s
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
5
W
Average Gate Power — Forward, (Over any 20ms period)
1
W
VDRM
Peak Repetitive Forward Blocking Voltage(gate open)
IT(RMS)
Forward Current RMS (All Conduction Angles, Tc=58℃)
(Note 1)
Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 50/60 Hz)
ITSM
I2 t
Circuit Fusing Considerations (t p= 10 ms)
PGM
PG(AV)
IFGM
Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)
4
A
VRGM
Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)
10
V
TJ,
Junction Temperature
-40~125
℃
Tstg
Storage Temperature
-40~150
℃
Note1
te1:: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC
may switch to the on-state. The rate of rise of current should not exceed 3A/us.
al Ch
arac
stics
Therm
rmal
Cha
actteri
ris
Symbol
Parame
ametter
Value
Min
p
Ty
Typ
x
Ma
Max
Units
RQJC
Thermal Resistance, Junction-to-Case
-
-
1.7
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
60
℃/W
Rev. B
Nov.2008
[email protected] Microelectronics Co., Ltd., All right reserved.
T01-3
WTPA24A60BW
tr
arac
sti
cs (Tc = 25°C unless otherwise specified)
Elec
ectr
triical Ch
Cha
actteri
ris
tics
Symbol
Characteristics
IDRM//IRRM
Peak Forward or Reverse Blocking Current
(V DRM=V RRM,)
Min
Typ.
Max
Unit
Tc=25℃
-
-
5
μA
Tc=125℃
-
-
3
mA
-
-
1.55
V
T2+G+
-
-
50
T2+G-
-
-
50
T2-G-
-
-
50
T2+G+
-
-
1.2
T2+G-
-
-
1.2
T2-G-
-
-
1.2
VTM
Forward “On” Voltage(Note2) (ITM = 35A Peak @ TA = 25°C)
IGT
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 33Ω)
VGT
Gate Trigger Voltage (Continuous dc)
(VD =12 Vdc, RL = 33Ω)
mA
V
VGD
Gate threshold voltage(Tj=125℃, VD= VDRM , RL = 3.3kΩ)
0.2
-
-
V
dV/dt
Critical rate of rise of commutation Voltage (VD=0.67VDRM )
1000
-
-
V/μs
22
-
-
A/μs
dIcom/dt
Critical rate of rise On-State voltage(VD=400V,Tj=125℃)
IH
Holding Current (IT= 500 mA)
-
-
80
mA
IL
IG=1.2IGT
-
-
100
mA
Rd
Dynamic resistance
-
-
16
mΩ
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
2/5
Steady, keep you advance
WTPA24A60BW
Fig
Fig..1
Fig
Fig..3
Fig
Fig..5
Fig
Fig..2
Fig
Fig..4
Fig
Fig..6
3/5
Steady, keep you advance
0WTPA24A60B
W
Fig.7
Fig.8
Fig
Fig..9
Fig.10 Gate Tri
gger Characteristics Test Cir
cuit
rig
irc
4/5
Steady, keep you advance
WTPA24A60BW
20 Pack
age Dim
ension
TO-2
-22
cka
Dime
Unit: mm
5/5
Steady, keep you advance