STF12A60 Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage:600 ■R.M.S On-State Current(IT(RMS)=12A ■ Isolation Voltage ( VISO = 1500V AC ) ■ High Commutation dV/dt. General Description General purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation A1 A2 control, lighting control and static switching relay. TO220F G Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) Symbol Parameter Value Units 600 V 12 A 119/130 A Circuit Fusing Considerations (t p= 10 ms) 71 A2s Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us) 5 W 0.5 W VDRM Peak Repetitive Forward Blocking Voltage(gate open) IT(RMS) Forward Current RMS (All Conduction Angles, Tc=58℃) ITSM Peak Forward Surge Current, I2t PGM PG(AV) (Note 1) (1/2 Cycle, Sine Wave, 50/60 Hz) Average Gate Power — Forward, (Over any 20ms period) IFGM Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS) 2 A VRGM Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS) 10 V TJ, Junction Temperature -40~125 ℃ Tstg Storage Temperature -40~150 ℃ Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may switch to the on-state. The rate of rise of current should not exceed 3A/us. Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 3.3 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 120 ℃/W Rev. B Nov.2008 1/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. STF12A60 8 Electrical Characteristics (Tc = 25°C unless otherwise specified) Characteristics Symbol Min Typ. Max Unit Tc=25℃ - - 10 μA Tc=125℃ - - 2 mA - - 1.4 V T2+G+ - - 30 T2+G- - - 30 T2-G- - - 30 T2+G+ - - 1.2 T2+G- - - 1.2 T2-G- - - 1.2 Gate threshold voltage(Tj=125℃, VD=0.5 VDRM) 0.2 - - V Critical rate of rise of commutation Voltage (VD=0.67VDRM) 10 - - V/μs 50 - - A/μs - 20 - mA Peak Forward or Reverse Blocking Current IDRM (VD= VDRM/VRRM,) Forward “On” Voltage(Note2) VTM (ITM = 20A Peak @ TA = 25°C) Gate Trigger Current (Continuous dc) IGT VGT VGD dV/dt dVcom/dt IH (VD = 6 Vdc, RL = 10 Ohms) Gate Trigger Voltage (Continuous dc) (VD =6 Vdc, RL = 10 Ohms) Critical rate of rise On-State voltage (VD=400V,Tj=125℃, dIcom/dt=0.5A/μs) Holding Current (VD =12 Vdc, initiating current = 20 mA) Note 2. Forward current applied for 1 ms maximum duration, duty cycle 2/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. mA V STF12A60 1 ON-state Voltage vs On-state Current Fig. Fig.1 3 Gate Characteristics Fig. Fig.3 5 Surge On-state Current Rating(Non-Repetitive) Fig. Fig.5 2 On-state Current vs Maximum Power Disspation Fig. Fig.2 4 On-state Current vs Allowable Case Temperature Fig. ig.4 6 Gate Trigger Current vs Junction Temperature Fig. Fig.6 3/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. STF12A60 8 7 Gate Trigger Current vs Junction Fig. Fig.7 8 Transient Thermal Impedance Fig. Fig.8 Temperature 9 Gate Trigger Characteristics Test Circuit Fig. Fig.9 4/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. STF12A60 220F Package Dimension TO TO220F Unit: mm 5/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.