2A60 BW WTPB1 WTPB12 A60B Sensitive Gate Bi-Directional Triode Thyristor es Featur Feature ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=12A ■ Low on-state voltage: VTM=1.55V(Max.)@ IT=17A ■ High Commutation dV/dt. ■Halogen free(WTPB12A60BW-HF) al De scription Gener Genera Des General purpose swithhing and phase control applications. These devices are intended to be interfaced directly to micro-controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) Symbol Parameter VDRM/VPRM Peak Repetitive Forward Blocking Voltage(gate open) IT(RMS) Forward Current RMS (All Conduction Angles, TJ=58℃) ITSM Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz) I2t Circuit Fusing Considerations (tp= 10 ms) PGM PG(AV) Value Units 600 V (Note 1) 12 A 120/126 A 100 A2s Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us) 5 W 1 W 50 A/μs IFGM Average Gate Power — Forward, (Over any 20ms period) Critical rate of rise of on-state current TJ=125℃ ITM = 20A; IG = 200mA; dIG/dt = 200mA/μs Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS) 4 A VRGM Peak Gate Voltage — Reverse, TJ= 125°C (20 µs, 120 PPS) 10 V TJ, Junction Temperature -40~125 ℃ Tstg Storage Temperature -40~150 ℃ dI/dt te1 No Note1 te1:: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may swiTJh to the on-state. The rate of rise of current should not exceed 15A/us. Thermal Char acte Chara cterristics Symbol Parameter Min Value Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 1.4 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 60 ℃/W Rev. A Apr.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T03-3 WTPB 12 A 60B W WTPB12 12A cteristics (TJ = 25°C unless otherwise specified) Electrical Chara Charac Characteristics Symbol IDRM//IRRM VTM Min Typ. Max Unit Peak Forward or Reverse Blocking Current TJ=25℃ - - 5 μA (VDRM=VRRM,) T J=125℃ - - 1 mA (ITM = 17A tp=380μs) - - 1.55 V T2+G+ - - 50 T2+G- - - 50 T2-G- - - 50 T2+G+ - - 1.2 T2+G- - - 1.2 T2-G- - - 1.2 Forward “On” Voltage (Note2) Gate Trigger Current (Continuous dc) IGT VGT (VD = 12 Vdc, RL = 33 Ω) Gate Trigger Voltage (Continuous dc) (VD =12 Vdc, RL = 33 Ω) mA V VGD Gate threshold voltage( VD= VDRM,RL = 3.3 KΩ,TJ=125℃,) 0.2 - - V dV/dt Critical rate of rise of commutation Voltage (VD=0.67VDRM) 40 - - V/μs - - 25 mA T2+G+ - - 40 T2+G- - - 70 T2-G- - - 40 - - 35 IH Holding Current (IT= 500 mA) (Note 3) Latching current IL Rd (VD =12 Vdc,IGT=0.1A) Dynamic resistance mA mΩ Note 2. Forward current applied for 1 ms maximum duration, duty cycle Note 3. For both polarities of A2 to A1 2/6 Steady, keep you advance 2A60 BW WTPB1 WTPB12 A60B g. 1 Fi Fig. g.1 g. 3 Fi Fig. g.3 g. 5 Fi Fig. g.5 g. 2 Fi Fig. g.2 g. 4 Fi Fig. g.4 g. 6 Fi Fig. g.6 3/6 Steady, keep you advance WTPB 12 A 60B W WTPB12 12A Fig Fig..7 g. 8 Fi Fig. g.8 Fi g. 9 Fig. g.9 g. 10 Gate Trigg er Ch ara cteristi cs Test Cir cuit Fi Fig. g.10 gge Cha rac tic Circ 4/6 Steady, keep you advance WTPB 12A60 BW WTPB1 A60B Marking layout - : Winsemi Semiconductor Logo B : IGT ∆ : W:The third quadrant Null : The fourth quadrant □ Part No. B∆ WWYY WW : Weekly code(01-52) YY : Last two digit of calendar year (11:2011;12:2012) □ : HF Null Halogen free Halogen 5/6 Steady, keep you advance WTPB 12A60 BW WTPB1 A60B TO-220 Package Dimension Unit: mm 6/6 Steady, keep you advance