2927

NTE2927
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO−220 Full Pack Type Package
Features:
D Low Drain−Source ON Resistance: RDS(ON) = 0.58 Typ.
D High Forward Transfer Admittance: |Yfs| = 6.0 S Typ.
D Low Leakage Current: IDSS = 10A Max. (VDS = 600V)
D Enhancement−Model: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA)
D
G
S
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Drain Current (Note 2), ID
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 363mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Repetitive Avalanche Energy (Note 4), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5mJ
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Channel−to−Case, RthCH−C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.78C/W
Thermal Resistance, Channel−to−Ambient, RthCH−A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage
and the significant change in temperature, etc. may cause this device to decrease in reliability
significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the Absolute Maximum Ratings. This transistor is an electrostatic sensitive device.
Please handle with caution.
Note 2. Make sure that the device channel temperature is below +150C.
Note 3. VDD = 90V, Tch = +25C (Initial), L = 6.36mH, RG = 25, IAR = 10A
Note 4. Repetitive rating; pulse width limited by maximum channel temperature.
Rev. 9−14
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Leakage Current
IGSS
VGS = 30V, VDS = 0V
−
−
1
A
Drain Cut−Off Current
IDSS
VDS = 600V, VGS = 0V
−
−
10
A
Drain−Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS
VGS = 0V, ID = 10mA
600
−
−
V
Vth
VDS = 10V, ID = 1mA
2.0
−
4.0
V
Drain−Source On−Resistance
RDS(on)
VGS = 10V, ID = 5A
−
0.58
0.75

Forward Transfer Admittance
|Yfs|
VDS = 10V, ID = 5A
1.5
6.0
−
S
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
−
1350
−
pF
Output Capacitance
Coss
−
135
−
pF
Reverse Transfer Capacitance
Crss
−
6
−
pF
Turn−On Delay Time
td(on)
−
55
−
ns
−
22
−
ns
td(off)
−
100
−
ns
tf
−
15
−
ns
−
25
−
nC
Rise Time
tr
Turn−Off Delay Time
Fall Time
VDD = 200V, ID = 5A, RL = 40,
Note 5
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
−
16
−
nC
Gate−to−Drain (“Miller”) Charge
Qgd
−
9
−
nC
ID = 10A, VDS = 400V, VGS = 10V
Note 5. Duty Cycle  1%, tw = 10s.
Source−Drain Ratings and Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Continuous Drain Reverse Current
IDR
Note 2
−
−
10
A
Pulsed Drain Reverse Current
IDRP
Note 2
−
−
40
A
Diode Forward Voltage
VDSF
IDR = 10A, VGS = 0V
−
−
−1.7
V
Reverse Recovery Time
trr
−
1300
−
ns
Reverse Recovery Charge
Qrr
IDR = 10A, VGS = 0V,
diDR/dt = 100A/s
−
12
−
C
Note 2. Make sure that the device channel temperature is below +150C.
.181 (4.6)
.106
(2.7)
.394 (10.0)
.118
(3.0)
.236
(6.0)
Isol
.590
(15.0)
G
D
S
.110
(2.8)
.492
(12.5)
Min
.100 (2.54)
.102 (2.6)