Datasheet

UNISONIC TECHNOLOGIES CO., LTD
TIP41C
NPN PLANAR TRANSISTOR
NPN EXPITAXIAL PLANAR
TRANSISTOR

DESCRIPTION
The UTC TIP41C is a NPN expitaxial planar transistor,
designed for using in general purpose amplifier and switching
applications.

FEATURE
* Complement to TIP42C

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
TIP41CL-x-TA3-T
TIP41CG-x-TA3-T
TO-220
TIP41CL-x-TF3-T
TIP41CG-x-TF3-T
TO-220F
TIP41CL-x-TN3-T
TIP41CG-x-TN3-T
TO-252
TIP41CL-x-TN3-R
TIP41CG-x-TN3-R
TO-252
Note: Pin Assignment: B: Base C: Collector
E: Emitter

Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Tape Reel
MARKING
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TIP41C

NPN PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified)
PARAMETER
Collector Base Voltage
Collector to Emitter Voltage
Emitter-Base Voltage
RATING
UNIT
100
V
100
V
5
V
DC
6
A
Collector Current
IC
Pulse
10
A
Base Current
IB
2
A
TO-220
65
TC=25C TO-220F
W
22
TO-252
25
PC
Collector Dissipation
TO-220
2
TA=25C TO-220F
W
0.7
TO-252
0.75
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-65 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCBO
VCEO
VEBO
ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)
PARAMETER
Emitter Base Breakdown Voltage
Collector Base Breakdown Voltage
Collector Emitter Sustaining Voltage (Note)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note)
Base-Emitter On Voltage (Note)
SYMBOL
BVEBO
BVCBO
BVCEO
ICEO
ICES
IEBO
VCE(SAT)
VBE(ON)
hFE1
DC Current Gain (Note)
hFE2
Current Gain Bandwidth Product
fT
Note: Pulse Test: PW≦300μs, Duty Cycle≦2%

TEST CONDITIONS
IE=100μA, IC=0
IC=100μA, IE=0
IC=30mA, IB=0
VCE=60V, IB=0
VCE=100V, VEB=0
VEB=5V, IC=0
IC=6A, IB=600mA
IC=6A, VCE=4V
IC=300mA, VCE=4V
IC=3A, VCE=4V
VCE=10V, IC=500mA, f=1MHz
MIN
5
100
100
30
15
3
TYP MAX UNIT
V
V
V
0.7
mA
400
μA
1
mA
1.5
V
2.0
V
75
MHz
CLASSIFICATION OF hFE2
RANK
RANGE
A
15~30
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
28~48
C
45~75
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TIP41C
Dc Current Gain, hFE
Saturation Voltage, VBE(SAT), VCE(SAT) (mV)
TYPICAL CHARACTERISTICS
Collector Current, IC (A)

NPN PLANAR TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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