20140310025846 8527

WFF15N60 Product Description
Silicon N-Channel MOSFET
Features
D
�
15A,600V, RDS(on)(Max0.52Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 36nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,DMOS technology.This latest technology has been especially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially well suited for high efficiency
switch model power supplies, power factor correction and half bridge and
full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
15*
A
Continuous Drain Current(@Tc=100℃)
9.5*
A
60*
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
245
mJ
IAR
Avalanche Current
(note 1)
15
A
EAR
Repetitive Avalanche Energy
(Note1)
23.9
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
9.8
V/ ns
53
W
0.42
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
2.36
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
WT-F058-Rev.A1 Jan.2014
WINSEM I
M ICROELECTRONICS
WINSEM I
M ICROELECTRONICS
[email protected] Microelectronics Co., Ltd., All right reserved.
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M ICROELECTRONICS
WINSEM I
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WFF15N60 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
100
µA
Drain cut -off current
IDSS
VDS=480V,TC=125℃
Drain -source breakdown voltage
V(BR)DSS
Breakdown voltage Temperature
△BVDSS/△TJ
ID=250 µA,VGS=0V
600
-
-
V
-
0.79
-
V/℃
ID=250µA,Referenced to 25
℃
Coefficient
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
3
-
5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=7.5A
-
0.45
0.52
Ω
Forward Transconductance
gfs
VDS=40V,ID=7.5A
-
19.8
-
S
Input capacitance
Ciss
VDS=25V,
-
2270
3000
Reverse transfer capacitance
Crss
VGS=0V,
-
23
37
Output capacitance
Coss
f=1MHz
-
300
405
VDD=250V,
-
78
162
Turn-On Rise time
tr
Turn-on delay time
Td(on)
ID=15A
-
50
101
Turn-On Fall time
tf
RG=25Ω
-
66
128
Turn-off delay time
Td(off)
-
120
261
-
36
60
-
9
-
-
16
-
Min
Type
pF
Switching time
ns
(Note4,5)
Total gate charge(gate-source
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
ID=15A
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Max
Unit
Continuous drain reverse current
IDR
-
-
-
15
A
Pulse drain reverse current
IDRP
-
-
-
60
A
Forward voltage(diode)
VDSF
IDR=15A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=15A,VGS=0V,
-
600
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
7.2
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=2.0mH IAS=15A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤15A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFF15N60 Product Description
Silicon N-Channel MOSFET
100
VG S
15V
10V
9V
8V
7V
6 .5 V
6V
5 .5 V
B ot t om 5 V
10
10
。
150 C
I D[A]
I D [A]
To p
。
25 C
1
N o t e s:
1 . 2 5 0 u s p u lse t e s t
2 . Tc=2 5 。
C
1
N otes:
1 . 2 5 0 u s p u ls e t e s t
2 . V D S =2 0 V
0 .1
1
2
10
3
4
5
6
7
8
9
10
VG S [V]
V D S [V]
Fig.2 Transfer Characteristics
Fig.1 On region Characteristics
0 .8 0
0 .7 5
10
0 .7 0
I D R [A ]
R DS(on)[Ω]
0 .6 5
0 .6 0
0 .5 5
V G S =10V
2 5。
C
1
0 .5 0
0 .4 5
V G S =20V
0 .4 0
。
150 C
。
N o te s:T=2 5 C
No t e s:
1 . 2 5 0 u s p u ls e t e s t
2 . V G S =0 V
0 .3 5
0 .3 0
0
2
4
6
8
10
12
14
16
18
20
22
0.1
0.2
0.3
0.4
0.5
I D [A]
0.7
0.8
0.9
1.0
1.1
VS D [V]
Fig.3 On-Resistance Variation vs Drain
current and gate voltage
Fig.4 Body diode Forward voltage variation
vs source current and temperature
12
10000
Ciss=Cgs+Cgd(Cds=shorted)
V D S =480V
C is s
Crss= Cgd
1000
Coss
100
C rs s
Notes:
1.VG S =0V
2.f=1MHz
10
VG S Gate Source Voltage[V]
Coss=Cds+Cgd
C ap a cit anc e [pF ]
0.6
V D S =380V
VD S =120V
8
6
4
2
*NOTE:I D=15A
10
10
0
10
-1
0
10
1
0
10
VD S Drain-Source Voltage[V]
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30
40
Qg Toltal Gate Charge[nC]
Fig.6 Gate Charge Characteristics
Fig.5 Capacitance characteristics
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WFF15N60 Product Description
1 .2 0
4 .0
1 .1 5
3 .5
1 .1 0
3 .0
RDS(ON) (Normalized)
BV DS (Normalized)
Silicon N-Channel MOSFET
1 .0 5
1 .0 0
0 .9 5
0 .9 0
0 .8 0
-7 5
-5 0
-2 5
0
25
50
T J [。C ]
75
100
125
2 .0
1 .5
1 .0
N o te s :
1 .V G S = 0 V
2 . I D= 2 5 0 u A
0 .8 5
2 .5
Notes:
1.V G S = 10V
2.I D = 7.5A
0 .5
150
0 .0
-7 5
-5 0
Fig.7 Breakdown voltage variation
vs temperature
-2 5
0
25
50
。
TJ[ C ]
75
100
125
150
Fig.8 On-Resistance variation vs
temperature
20
2
18
10us
ID Drain Current[A]
100us
10
14
1m s
1
16
I D Drain Current[A]
10
Operation in This Area
is limited by R DS(on)
12
10m s
10
10
0
10
-1
10
100m s
Note:
1.T C =25。C
2.T J=150。C
3.Single Pulse
8
6
4
D C
2
-2
0
10
0
10
VD
S
1
10
25
2
50
75
100
。
T C Case Temperature[ C ]
D rai n-S ource Vol tage[V ]
Fig.9 Maximum Safe Operation Area
125
150
Fig.10 Maximum Drain Currentvs
Case temperature
ZθJC (t),Thermal Response
D= 0. 5
1
0. 2
0. 1
0. 05
* N o te:
0. 1
。
1.Zθ J C (t)=3.6 C/W Max.
2.Duty Factor,D=t1/t2
3.T JM-T C=P DM* Zθ J C (t)
0. 02
0. 01
PD M
Single pulse
0. 01
t1
t2
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
11
t 1,Square Wave Pulse Duration [sec]
Fig.11 Transient thermal Response Curve
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WFF15N60 Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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WFF15N60 Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
Gate Pulse Width
Gate Pulse Period
D =
(Driver)
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFF15N60 Product Description
Silicon N-Channel MOSFET
TO-220F Package Dimension
U n it:m m
E
符 号
Symbol
M IN
M AX
A
4 .5
4 .9
B
-
1 .4 7
b
0 .7
0 .9
c
0 .4 5
0 .6
D
1 5 .6 7
1 6 .0 7
E
9 .9 6
1 0 .3 6
Q
F
L2
D
P
e
L
B
b
C
2.54TYPE
F
2 .3 4
2 .7 4
L
1 2 .5 8
1 3 .3 8
L2
3 .1 3
3 .3 3
ФP
3 .0 8
3 .2 8
Q
3 .2
3 .4
Q1
2 .5 6
2 .9 6
Q1
e
A
e
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WFF15N60 Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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