NTE2596 Silicon NPN Transistor High Voltage, High Current Switch TO3PBL Type Package Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Collector−to−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Emitter−to−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 10%. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 500V, IE = 0 − − 10 μA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 10 μA DC Current Gain hFE(1) VCE = 5V, IC = 4.8A 20 − 50 hFE(2) VCE = 5V, IC = 24A 8 − − Collector−Emitter Saturation Voltage VCE(sat) IC = 24A, IB = 4.8A − − 1.0 V Base−Emitter Saturation Voltage VBE(sat) IC = 24A, IB = 4.8A − − 1.5 V Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Min Typ Collector−Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 800 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞ 500 − − V 7 − − V 500 − − V − − 0.5 μs − − 3.0 μs − − 0.2 μs Emitter−Base Breakdown Voltage Test Conditions V(BR)EBO IE = 1mA, IC = 0 Collector−Emitter Sustaining Voltage VCEX(sus) IC = 15A, IB1 = −IB2 = 2A, L = 100μH, Clamped Turn−On Time ton Storage Time tstg Fall Time tf VCC = 200V, 5IB1 = −2.5IB2 = IC = 26A, RL = 7.7Ω Max Unit .204 (5.2) .810 (20.57) Max .236 (6.0) 1.030 (26.16) .137 (3.5) Dia Max .098 (2.5) .215 (5.45) .787 (20.0) .040 (1.0) B C .023 (0.6) E Note: Collector connected to heat sink