IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits. Formerly developmental type TA17512. Ordering Information PART NUMBER PACKAGE July 1999 File Number 2224.3 Features • 6.5A, 200V • rDS(ON) = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND IRF9630 TO-220AB IRF9630 RF1S9630SM TO-263AB RF1S9630 D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9630SM9A. S Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) 4-27 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF9630, RF1S9630SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRF9630, RF1S9630SM -200 -200 -6.5 -4 -26 ±20 75 0.6 500 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS -200 - - V Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V(Figure 10) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2 - -4 V VDS = Rated BVDSS, VGS = 0V - - -25 µA µA Zero Gate Voltage Drain Current IDSS VDS = 0.8 x Rated BVDSS, VGS = 0V, TC= 125oC On-State Drain Current (Note 2) ID(ON) Gate to Source Leakage Current IGSS On Resistance (Note 2) rDS(ON) Forward Transconductance (Note 2) Turn-On Delay Time gfs td(ON) Rise Time tr Turn-Off Delay Time td(off) Fall Time VDS > ID(ON) x rDS(ON)MAX, VGS = -10V VGS = ±20V ID = -3.5A, VGS = -10V (Figures 8, 9) VDS ≥ ID(ON) x rDS(ON)MAX, ID = -3.5A (Figure 12) VDD = -100V, ID ≈ -6.5A, RG = 50Ω RL = 15.4Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Qg(TOT) Qgs Gate to Drain (“Miller”) Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Internal Drain Inductance LD VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated BVDSS Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VDS = -25V, VGS = 0V, f = 1MHz (Figure 11) Measured From the Contact Screw On Tab To the Center of Die Measured From the Drain Lead, 6mm (0.25in) From Package to the Center of Die Internal Source Inductance LS Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA 4-28 Measured From the Source Lead, 6mm (0.25in) From Package to Source Bonding Pad Typical Socket Mount Modified MOSFET Symbol Showing the Internal Devices Inductances D - - -250 -6.5 - - A - - ±100 nA - 0.500 0.800 Ω 2.2 3.5 - S - 30 50 ns - 50 100 ns - 50 100 ns - 40 80 ns - 31 45 nC - 18 - nC - 13 - nC - 550 - pF - 170 - pF - 50 - pF - 3.5 - nH - 4.5 - nH - 7.5 - nH - - 1.67 oC/W - - 80 oC/W LD G LS S IRF9630, RF1S9630SM Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode ISDM MIN TYP MAX UNITS - - -6.5 A - - -26 A - - -1.5 V - 400 - ns - 2.6 - µC D G S Source to Drain Diode Voltage (Note 2) TJ = 25oC, ISD = -6.5A, VGS = 0V (Figure 13) TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs VSD Reverse Recovery Time trr Reverse Recovery Charge QRR NOTES: 2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 17.75mH, RG = 25Ω, peak IAS = 6.5A. (Figures 15, 16). Typical Performance Curves Unless Otherwise Specified -10 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 -8 -6 -4 -2 0 0 50 100 150 0 50 TC, CASE TEMPERATURE (oC) 75 125 100 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE THERMAL IMPEDENCE 1 ZqJC, NORMALIZED POWER DISSIPATION MULTIPLIER 1.2 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 t1 t2 t2 SINGLE PULSE 0.01 10-5 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-4 10-3 10-2 10-1 t 1, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 4-29 1 10 IRF9630, RF1S9630SM Typical Performance Curves -100 Unless Otherwise Specified (Continued) -15 ID, DRAIN CURRENT (A) TJ = MAX RATED SINGLE PULSE -10 10µs 100µs 1ms -1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) -0.1 -1 100ms DC -10 -100 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) TC = 25oC VGS = -10V VGS = -8V -12 -9 VGS = -6V -6 VGS = -5V -3 VGS = -4V 0 -1000 -10 VGS = -9V VGS = -8V VGS = -7V VGS = -6V -4 VGS = -5V VGS = -4V 0 -2 -4 -6 -8 ID(ON), ON-STATE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = -10V -8 0 -55oC -9 25oC -125oC -6 -3 0 -10 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) 2.5 1.6 1.2 VGS = -10V 0.8 VGS = - 20V 0 -15 -10 ID, DRAIN CURRENT (A) -20 -25 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 0.5 0 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2µs pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-30 -10 FIGURE 7. TRANSFER CHARACTERISTICS 2.0 -5 -50 -12 FIGURE 6. SATURATION CHARACTERISTICS 0 -40 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS, DRAIN TO SOURCE VOLTAGE (V) 0.4 -30 FIGURE 5. OUTPUT CHARACTERISTICS -15 -12 -20 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX -16 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = -7V FIGURE 4. FORWARD BIAS SAFE OPERATING AREA -20 -9V FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 160 IRF9630, RF1S9630SM Typical Performance Curves Unless Otherwise Specified (Continued) 2000 1.15 VGS = 0V, f = 1MHz CISS = CGS + CGD C = CGD 1600 RSS COSS ≈ CDS + CGD C, CAPACITANCE (pF) NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE 1.25 1.05 0.95 1200 CISS 800 COSS 400 0.85 CRSS 0.75 -40 0 40 120 80 0 160 10 0 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 30 40 50 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE -100 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 5.6 ISD, DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE (S) 7.0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = -55oC TJ = 25oC 4.2 TJ = 125oC 2.8 1.4 TJ = 150oC -10 TJ = 25oC -1.0 -0.1 0 0 -3 -6 -9 -12 -15 -0.4 -0.6 ID , DRAIN CURRENT (A) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 0 VGS, GATE TO SOURCE (V) -0.8 -1.4 -1.0 -1.2 -1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) I D = -8A -5 VDS = -160V - 10 VDS = -100V VDS = -40V - 15 0 8 16 24 42 40 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-31 -1.8 IRF9630, RF1S9630SM Test Circuits and Waveforms VDS tAV L 0 VARY tP TO OBTAIN REQUIRED PEAK IAS - RG VDD + 0V VDD DUT tP IAS IAS VDS tP 0.01Ω -VGS BVDSS FIGURE 15. UNCLAMPED INDUCTIVE ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(OFF) td(ON) tr 0 - DUT VGS VDS VDD VGS 0 + 10% 10% RL RG tf 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS FIGURE 17. SWITCHING TIME TEST CIRCUIT -VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 0 VDS DUT 0.2µF 50kΩ 0.3µF + Qgs Qg(TOT) DUT G VGS Qgd D VDD 0 S IG(REF) IG CURRENT SAMPLING RESISTOR +VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 4-32 0 IG(REF) FIGURE 20. GATE CHARGE WAVEFORMS IRF9630, RF1S9630SM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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