IRFD320 Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS(ON) = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA17404. Ordering Information IRFD320 Symbol PACKAGE HEXDIP 2325.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. PART NUMBER File Number BRAND D IRFD320 NOTE: When ordering, use the entire part number. G S Packaging HEXDIP DRAIN GATE SOURCE 4-299 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD320 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRFD320 400 400 0.5 2.0 ±20 1.0 0.008 100 -55 to 150 UNITS V V A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS V Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 9) 400 - - Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time IDSS ID(ON) IGSS rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 250 µA 0.5 - - A VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = ±20V - - ±100 nA ID = 0.25A, VGS = 10V (Figures 7, 8) - 1.5 1.8 Ω 1.7 2.0 - S - 20 40 ns VDS ≥ 10V, ID = 2.0A (Figure 11) VDD = 0.5 x Rated BVDSS, ID ≈ 0.5A, RG = 9.1Ω, VGS = 10V, RL = 398Ω for VDSS = 200V MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VGS = 10V, ID = 0.5A, VDS = 0.8 x Rated BVDSS , IG(REF) = 1.5µA (Figure 13), Gate Charge is Essentially Independent of Operating Temperature VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 25 50 ns - 50 100 ns - 25 50 ns - 12 15 nC - 6.0 - nC - 6.0 - nC Input Capacitance CISS - 455 - pF Output Capacitance COSS - 100 - pF Reverse Transfer Capacitance CRSS - 20 - pF - 4.0 - nH - 6.0 - nH - - 120 oC/W Internal Drain Inductance LD Measured From Drain Lead, 2.0mm (0.08in) from Package to Center of Die Internal Source Inductance LS Measured From the Source Lead, 2.0mm (0.08in) from Package to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances D LD G LS S Thermal Resistance Junction to Ambient 4-300 RθJA Free Air Operation IRFD320 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) ISD TEST CONDITIONS MIN TYP MAX UNITS - - 0.5 A - - 2.0 A TJ = 25oC, ISD = 2.0A, VGS = 0V (Figure 12) - - 1.6 V TJ = 150oC, ISD = 2.0A, dISD/dt = 100A/µs TJ = 150oC, ISD = 2.0A, dISD/dt = 100A/µs - 450 - ns - 3.1 - µC Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier ISDM D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time VSD trr Reverse Recovery Charge QRR NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 4. VDD = 40V, starting TJ = 25oC, L = 29.09mH, RG = 50Ω, peak IAS = 2.5A. Typical Performance Curves Unless Otherwise Specified 0.5 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.3 0.1 0.2 0 25 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 6 VGS = 6.0V 0.1 10ms 100ms 00.1 1s VGS = 5.5V 4 VGS = 5.0V 3 2 VGS = 4.5V 1 VGS = 4.0V DC 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 4-301 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V 5 10µs 100µs 1ms ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1 1 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 0.001 125 100 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE TJ = MAX RATED TC = 25oC SINGLE PULSE 75 50 1000 0 0 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. OUTPUT CHARACTERISTICS 300 IRFD320 Typical Performance Curves Unless Otherwise Specified (Continued) 6 5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 5 VGS = 5.5V 4 VGS = 10V 3 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 6.0V VGS = 5.0V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2 VGS = 4.5V 1 VGS = 4.0V 8 4 12 TJ = 125oC TJ = 25oC 2 TJ = -55oC 0 20 16 3 1 0 0 4 0 1 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. SATURATION CHARACTERISTICS 2.2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2µs PULSE TEST DUTY CYCLE = 0.5% MAX VGS = 10V 4 VGS = 20V 3 2 1 0 0 4 6 8 ID, DRAIN CURRENT (A) 2 6 FIGURE 6. TRANSFER CHARACTERISTICS 5 ON RESISTANCE (Ω) rDS(ON), DRAIN TO SOURCE 6 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 10 1.8 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 0.25A 1.4 1.0 0.6 0.2 12 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2µs pulse is minimal. FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.25 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 1.15 800 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250µA 1.05 0.95 0.85 600 CISS 400 COSS 200 CRSS 0.75 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 4-302 0 0 10 30 40 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE IRFD320 Typical Performance Curves Unless Otherwise Specified (Continued) 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX ISD, SOURCE TO DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE (S) 5 TJ = -55oC 4 TJ = 25oC 3 TJ = 125oC 2 1 0 0 1 2 3 4 I D , DRAIN CURRENT (A) 5 FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT TJ = 25oC TJ = 150oC 10 TJ = 150oC 1 6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0 TJ = 25oC 1 2 3 VSD, SOURCE TO DRAIN VOLTAGE (V) 4 FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE VGS, GATE TO SOURCE VOLTAGE (V) 20 ID = 0.5A VDS = 80V 15 VDS = 200V VDS = 320V 10 5 0 0 4 8 12 Qg, GATE CHARGE (nC) 16 20 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS tP + RG - VGS VDS IAS VDD VDD DUT 0V tP IAS 0.01Ω 0 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT 4-303 FIGURE 15. UNCLAMPED ENERGY WAVEFORMS IRFD320 Test Circuits and Waveforms (Continued) tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 10% 0 90% DUT VGS VGS 0 10% VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2µF 50% PULSE WIDTH FIGURE 17. RESISTIVE SWITCHING WAVEFORMS FIGURE 16. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 IG(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 18. GATE CHARGE TEST CIRCUIT IG(REF) 0 FIGURE 19. 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