IRF9520 Data Sheet July 1999 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET • 6A, 100V • rDS(ON) = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol Formerly developmental type TA17501. D Ordering Information IRF9520 PACKAGE TO-220AB 2281.3 Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. PART NUMBER File Number BRAND G IRF9520 NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF9520 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC =100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRF9520 -100 -100 -6 -4 -24 ±20 40 0.32 370 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to TJ = 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage PARAMETER SYMBOL BVDSS ID = -250µA, VGS = 0V (Figure 10) -100 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2 - -4 V VDS = Rated BVDSS, VGS = 0V - - -25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V TC = 125oC - - -250 µA VDS > ID(ON) x rDS(ON) MAX, VGS = -10V -6 - - A VGS = ±20V - - ±100 nA Zero Gate Voltage Drain Current IDSS On-State Drain Current (Note 2) ID(ON) Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time ID = -3.5A, VGS = -10V (Figures 8, 9) VDS > ID(ON) x rDS(ON)MAX, ID = -3.5A ( Figure 12) VDD = 0.5 x Rated BVDSS, ID ≈ -6.0A, RG = 50Ω , RL = 7.7Ω for VDSS = 50Ω MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Qg(TOT) Qgs Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Internal Drain Inductance LD VGS = -10V, ID = -6A, VDS = 0.8 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VDS = -25V, VGS = 0V, f = 1MHz (Figure 11) Measured From the Modified MOSFET Contact Screw on Tab To Symbol Showing the Center of Die Internal Devices Measured From the Drain Inductances D Lead, 6mm (0.25in) from Package to Center of Die Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad - 0.500 0.600 Ω 0.9 2 - S - 25 50 ns - 50 100 ns - 50 100 ns - 50 100 ns - 16 22 nC - 9 - nC - 7 - nC - 300 - pF - 200 - pF - 50 - pF - 3.5 - nH - 4.5 - nH - 7.5 - nH - - 3.12 oC/W - - 62.5 oC/W LD G LS S Thermal Resistance Junction-to-Case RθJC Thermal Resistance Junction-to-Ambient RθJA 4-4 Typical Socket Mount IRF9520 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current MIN TYP MAX - - -6.0 A - - -24 A TC = 25oC, ISD = -6.0A, VGS = 0V (Figure 13) - - -1.5 V trr TJ = 150oC, ISD = -6.0A, dISD/dt = 100A/µs - 230 - ns QRR TJ = 150oC, ISD = -6.0A, dISD/dt = 100A/µs - 1.3 - µC ISD Pulse Source to Drain Current (Note 3) ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode UNITS D G S Source to Drain Diode Voltage (Note 2) VSD Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 15.4mH, RG = 25Ω, peak IAS = 6.0A. Typical Performance Curves Unless Otherwise Specified 6.0 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 4.8 3.6 2.4 1.2 0 0.0 0 25 50 75 100 TA , CASE TEMPERATURE (oC) 125 25 150 75 50 125 100 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE ZθJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE POWER DISSIPATION MULTIPLIER 1.2 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 0.5 PDM 0.2 0.1 0.1 t1 t2 0.05 0.02 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t 1, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE 4-5 1 10 IRF9520 Typical Performance Curves Unless Otherwise Specified (Continued) -10 VGS = -9V VGS = -10V 10µs 100µs 1ms OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 1 10ms 100ms DC ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) -8 10 -6 1 VGS = -7V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. -4 VGS = -6V -2 TC = 25oC TJ = MAX RATED 0.1 VGS = -8V VGS = -5V VGS = -4V 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 0 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA -10 VGS = -7V VGS = -8V -4 VGS = -9V VGS = -10V -3 VGS = -6V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. -2 VDS ≥ I D(ON) x rDS(ON) MAX PULSE DURATION = 80µs -8 DUTY CYCLE = 0.5% MAX. TJ = 125oC ID(ON), ON-STATE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) -50 FIGURE 5. OUTPUT CHARACTERISTICS -5 VGS = -5V -1 VGS = -4V 0 TJ = 25oC -6 TJ = -55oC -4 -2 0 -4 -2 -3 -1 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 -5 0 FIGURE 6. SATURATION CHARACTERISTICS -10 2.2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. 1.6 1.2 VGS = -10V 0.8 0.4 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 7. TRANSFER CHARACTERISTICS 2.0 rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) -10 -20 -30 -40 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -20V VGS = -10V, ID = -4A PULSE DURATION = 80µs 1.8 DUTY CYCLE = 0.5% MAX. 1.4 1.0 0.6 0.2 0 -5 -10 -15 ID, DRAIN CURRENT (A) -20 -25 FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-6 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE IRF9520 Typical Performance Curves Unless Otherwise Specified (Continued) 500 1.25 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 400 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250µA 1.05 0.95 CISS 300 0.85 0.75 -40 0 40 80 120 200 COSS 100 CRSS 0 160 -10 0 TJ , JUNCTION TEMPERATURE (oC) -30 -40 -50 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 3 -100 ISD, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. 2 TJ = -55oC TJ = 25oC TJ = 125oC 1 0 0 -2 -4 -6 ID , DRAIN CURRENT (A) -8 -10 -0.1 -0.4 -10 TJ = 150oC TJ = 25oC -1.0 -0.8 -0.6 -1.0 ID = -6A -5 VDS = -80V -10 VDS = -50V VDS = -20V 4 8 12 16 20 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-7 -1.4 -1.6 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 0 0 -1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT VGS, GATE TO SOURCE (V) gfs, TRANSCONDUCTANCE (S) -20 -1.8 IRF9520 Test Circuits and Waveforms VDS tAV L 0 VARY tP TO OBTAIN - RG REQUIRED PEAK IAS + VDD DUT 0V VDD tP VGS IAS IAS VDS tP 0.01Ω BVDSS FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(OFF) td(ON) tr 0 RL - DUT VGS + 10% 10% VDS VDD RG tf VGS 0 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS -VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0 VDS DUT 12V BATTERY 0.2µF 50kΩ 0.3µF Qgs Qg(TOT) DUT G VGS Qgd D VDD 0 S IG(REF) IG CURRENT SAMPLING RESISTOR +VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 4-8 0 IG(REF) FIGURE 20. GATE CHARGE WAVEFORMS IRF9520 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. 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