Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT4435
Power MOSFET
-8.8A, 30V P-CHANNEL
POWER MOSFET

DESCRIPTION
The UT4435 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.

SOP-8
FEATURES
* RDS(ON) ≤ 20 mΩ @ VGS=-10V, ID=-8.8A
* RDS(ON) ≤ 35 mΩ @ VGS = - 4.5V, ID=-6.7A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT4435G-S08-R
Pin Assignment: S: Source
Package
G: Gate
SOP-8
D: Drain
1
S
2
S
Pin Assignment
3 4 5 6 7
S G D D D
8
D
Packing
Tape Reel
MARKING
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Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R502-254.H
UT4435

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current (Note 3a)
ID
-8.8
A
Pulsed Drain Current
IDM
-50
A
Power Dissipation (Note 3b)
PD
1
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
3. θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. θJC is guaranteed by design while θJA
is determined by the user's board design.

THERMAL DATA
PARAMETER
Junction to Ambient (Note 3a)
Junction to Ambient(Note 3b)
Junction to Case
SYMBOL
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θJA
θJC
RATINGS
50
125
25
UNIT
°С/W
°С/W
°С/W
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UT4435

Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS(Note)
Gate-Threshold Voltage
On State Drain Current
Static Drain–Source On–Resistance
SYMBOL
TEST CONDITIONS
MIN
BVDSS
IDSS
IGSS
VGS=0 V, ID=-250µA
VDS=-24 V, VGS=0V
VGS= ±25 V, VDS=0V
-30
VGS(TH)
ID(ON)
VDS=VGS, IDS=-250µA
VGS= -10V, VDS=-5V
VGS=-10V, ID=-8.8A
VGS=4.5V, ID=-6.7A
VDS=-5V, ID=-8.8A
-1
-50
RDS(ON)
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-15V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS(Note)
Total Gate Charge
QG
VDS =-15V, VGS=-5 V, ID=-8.8 A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=-15V, ID=-1A,VGS=-10V
Turn-ON Rise Time
tR
RG=6 Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(Note)
VSD
IS=-2.1A, VGS=0V
Maximum Body-Diode Continuous
IS
Current
Note: Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
UNISONIC TECHNOLOGIES CO., LTD
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TYP
MAX UNIT
-1
±100
-1.7
-3
16.5
26
24
20
35
1604
408
202
V
µA
nA
V
A
mΩ
mΩ
S
pF
pF
pF
17
5
6
13
13.5
42
25
24
23
24
68
40
nC
nC
nC
ns
ns
ns
ns
-0.73
-1.2
V
-2.1
A
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UT4435
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
Switching Time Waveforms
-3.0
-2.5
0
10%
10%
-2.0
VDS
VGS
0
-1.5
90%
90%
10%
-1.0
90%
-0.5
tR
tF
tD(ON)
0
0
-0.2
-0.4
-0.6
-0.8
Source to Drain Voltage, VSD (V)
-1.0
Drain Current vs.
Drain-Source Breakdown Voltage
-450
-10
-350
-300
VGS=-10V,
ID=-8.8A
-8
-250
-6
-200
VGS=-4.5V,
ID=-6.7A
-4
-150
-100
-2
-50
-50
Drain-Source
On-State Resistance Characteristics
-12
-400
0
tD(OFF)
0
-20
-30
-50
-40
-10
Drain-Source Breakdown Voltage, BVDSS(V)
On-State Characteristics
0
0
-300
-100
-400
-200
Drain to Source Voltage, VDS (mV)
Transfer Characteristics
-40
25°С
-40
-30
150°С
-30
-20
-20
-10
-10
0
-2
-1
-3
Drain-to-Source Voltage, VDS (V)
-4
UNISONIC TECHNOLOGIES CO., LTD
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0
-1
-2
-3
-4
-5
Gate-Source Voltage, VGS (V)
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UT4435
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Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Transient Thermal Response Curve
Safe Operating Area
100
1
RDS(on) LIMIT
100µs
1ms
10
10ms
D=0.5
100ms
0.2
1s
0.1
10s
DC
1
0.1
0.05
0.1
0.02
VGS=-10V
Single Pulse
θJA=125°C/W
TA=25°C
0.01
0.1
10
1
Drain-Source Voltage, VDS (V)
0.01
Single Pulse
0.01
100
Notes:
1. θJA (t) = 125°C/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
10-5
10-4 10-3
10-2
10-1
100
101
Square Wave Pulse Duration, t1 (sec)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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