UNISONIC TECHNOLOGIES CO., LTD UT4435 Power MOSFET -8.8A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UT4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SOP-8 FEATURES * RDS(ON) ≤ 20 mΩ @ VGS=-10V, ID=-8.8A * RDS(ON) ≤ 35 mΩ @ VGS = - 4.5V, ID=-6.7A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL ORDERING INFORMATION Ordering Number Note: UT4435G-S08-R Pin Assignment: S: Source Package G: Gate SOP-8 D: Drain 1 S 2 S Pin Assignment 3 4 5 6 7 S G D D D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-254.H UT4435 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 3a) ID -8.8 A Pulsed Drain Current IDM -50 A Power Dissipation (Note 3b) PD 1 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%. 3. θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. θJC is guaranteed by design while θJA is determined by the user's board design. THERMAL DATA PARAMETER Junction to Ambient (Note 3a) Junction to Ambient(Note 3b) Junction to Case SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 50 125 25 UNIT °С/W °С/W °С/W 2 of 5 QW-R502-254.H UT4435 Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS(Note) Gate-Threshold Voltage On State Drain Current Static Drain–Source On–Resistance SYMBOL TEST CONDITIONS MIN BVDSS IDSS IGSS VGS=0 V, ID=-250µA VDS=-24 V, VGS=0V VGS= ±25 V, VDS=0V -30 VGS(TH) ID(ON) VDS=VGS, IDS=-250µA VGS= -10V, VDS=-5V VGS=-10V, ID=-8.8A VGS=4.5V, ID=-6.7A VDS=-5V, ID=-8.8A -1 -50 RDS(ON) Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VDS=-15V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS(Note) Total Gate Charge QG VDS =-15V, VGS=-5 V, ID=-8.8 A Gate-Source Charge QGS Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=-15V, ID=-1A,VGS=-10V Turn-ON Rise Time tR RG=6 Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage(Note) VSD IS=-2.1A, VGS=0V Maximum Body-Diode Continuous IS Current Note: Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT -1 ±100 -1.7 -3 16.5 26 24 20 35 1604 408 202 V µA nA V A mΩ mΩ S pF pF pF 17 5 6 13 13.5 42 25 24 23 24 68 40 nC nC nC ns ns ns ns -0.73 -1.2 V -2.1 A 3 of 5 QW-R502-254.H UT4435 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage Switching Time Waveforms -3.0 -2.5 0 10% 10% -2.0 VDS VGS 0 -1.5 90% 90% 10% -1.0 90% -0.5 tR tF tD(ON) 0 0 -0.2 -0.4 -0.6 -0.8 Source to Drain Voltage, VSD (V) -1.0 Drain Current vs. Drain-Source Breakdown Voltage -450 -10 -350 -300 VGS=-10V, ID=-8.8A -8 -250 -6 -200 VGS=-4.5V, ID=-6.7A -4 -150 -100 -2 -50 -50 Drain-Source On-State Resistance Characteristics -12 -400 0 tD(OFF) 0 -20 -30 -50 -40 -10 Drain-Source Breakdown Voltage, BVDSS(V) On-State Characteristics 0 0 -300 -100 -400 -200 Drain to Source Voltage, VDS (mV) Transfer Characteristics -40 25°С -40 -30 150°С -30 -20 -20 -10 -10 0 -2 -1 -3 Drain-to-Source Voltage, VDS (V) -4 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 -1 -2 -3 -4 -5 Gate-Source Voltage, VGS (V) 4 of 5 QW-R502-254.H UT4435 Power MOSFET TYPICAL CHARACTERISTICS (Cont.) Transient Thermal Response Curve Safe Operating Area 100 1 RDS(on) LIMIT 100µs 1ms 10 10ms D=0.5 100ms 0.2 1s 0.1 10s DC 1 0.1 0.05 0.1 0.02 VGS=-10V Single Pulse θJA=125°C/W TA=25°C 0.01 0.1 10 1 Drain-Source Voltage, VDS (V) 0.01 Single Pulse 0.01 100 Notes: 1. θJA (t) = 125°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-254.H