10 Fx062PA075SA P993F0x D2 14

10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
flow PHASE0
600 V / 75 A
Features
flow 0 housing
● Trench Fieldstop IGBT3 technology
● 2-clip housing in 12mm and 17mm height
● Compact and low inductance design
Target Applications
Schematic
● Motor Drive
● UPS
Types
● 10-FZ062PA075SA-P993F08
● 10-F0062PA075SA-P993F09
Maximum Ratings
T j=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
600
V
60
A
225
A
104
W
Half-Bridge Switch
Collector-emitter break down voltage
DC collector current
V CE
IC
T j = T jmax
Repetitive peak collector current
I CRM
t p limited by T jmax
Power dissipation
P tot
T j = T jmax
Gate-emitter peak voltage
V GE
Short circuit ratings
t SC
V CC
T s = 80 °C
T s = 80 °C
±20
V
6
360
µs
V
T jmax
175
°C
V RRM
600
V
51
A
150
A
69
W
T jmax
175
°C
Storage temperature
T stg
-40…+125
°C
Operation temperature under switching condition
T op
-40…+(T jmax - 25)
°C
Maximum Junction Temperature
T j ≤ 150 °C
V GE = 15 V
Half-Bridge Diode
Peak Repetitive Reverse Voltage
DC forward current
IF
T j = T jmax
Repetitive peak forward current
I FRM
t p limited by T jmax
Power dissipation
P tot
T j = T jmax
Maximum Junction Temperature
T s = 80 °C
T s = 80 °C
Thermal Properties
Isolation Properties
Isolation voltage
V is
t =2s
DC voltage
Creepage distance
Clearance
Comparative Tracking Index
copyright Vincotech
CTI
4000
V
min 12,7
mm
17 mm housing
min 12,7
mm
12 mm housing
9,88
mm
>200
1
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Characteristic Values
Parameter
Conditions
Symbol
V GE [V]
V GS [V]
V r [V]
V CE [V]
V DS [V]
Value
I C [A]
I F [A]
I D [A]
T j [°C]
0,0012
25
75
25
150
Min
Unit
Typ
Max
5
5,8
6,5
1
1,63
1,87
2,1
Half-Bridge Switch
Gate emitter threshold voltage
V GE(th)
Collector-emitter saturation voltage
V CEsat
V CE = V GE
15
V
V
Collector-emitter cut-off current incl. Diode
I CES
0
600
25
0,03
mA
Gate-emitter leakage current
I GES
20
0
25
700
nA
Integrated Gate resistor
R gint
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
tr
t d(off)
tf
Turn-on energy loss
E on
Turn-off energy loss
E off
Input capacitance
C ies
Output capacitance
C oss
Reverse transfer capacitance
C rss
Gate charge
QG
Thermal resistance junction to sink
R th(j-s)
Ω
4
R goff = 2 Ω
R gon = 2 Ω
±15
300
75
25
150
25
150
25
150
25
150
25
150
25
150
123
132
15
21
169
199
87
105
0,52
0,89
1,68
2,26
ns
mWs
4700
f = 1 MHz
0
25
15
480
25
pF
300
145
75
25
phase-change
material
λ = 3,4 W/mK
465
nC
0,83
K/W
Half-Bridge Diode
Diode forward voltage
Peak reverse recovery current
VF
I RRM
Reverse recovery time
t rr
Reverse recovered charge
Q rr
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance junction to sink
copyright Vincotech
50
R gon = 2 Ω
±15
300
( di rf/dt )max
E rec
R th(j-s)
phase-change
material
λ = 3,4 W/mK
75
25
150
25
150
25
150
25
150
25
150
25
150
1
1,64
1,59
94
111
101
128
3,24
6,50
6615
4122
0,75
1,57
1,18
2
2,1
V
A
ns
µC
A/µs
mWs
K/W
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Half-Bridge
figure 1.
Typical output characteristics
I C = f(V CE)
Half-Bridge Switch
figure 2.
Half-Bridge Switch
Typical output characteristics
I C = f(V CE)
IC (A)
200
IC (A)
200
160
160
120
120
80
80
40
40
0
0
0
At
tp =
Tj =
V GE from
1
2
3
4
V CE (V)
5
0
At
tp =
Tj =
V GE from
350
μs
25
°C
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
I C = f(V GE)
Half-Bridge Switch
1
2
3
4
5
350
μs
150
°C
7 V to 17 V in steps of 1 V
figure 4.
Typical diode forward current as
a function of forward voltage
I F = f(V F)
Half-Bridge Diode
200
IC (A)
IF (A)
75
V CE (V)
60
160
45
120
30
80
Tj = Tjmax - 25°C
Tj = Tjmax - 25°C
15
40
Tj = 25°C
Tj = 25°C
0
0
0
At
tp =
V CE =
2
350
10
copyright Vincotech
4
6
8
10
V GE (V)
12
0
At
tp =
μs
V
3
0,5
1
350
μs
1,5
2
2,5
V F (V)
3
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Half-Bridge
figure 5.
Half-Bridge Switch
figure 6.
Half-Bridge Switch
Typical switching energy losses
Typical switching energy losses
as a function of collector current
E = f(I C)
as a function of gate resistor
E = f(R G)
E (mWs)
4
E (mWs)
4
Eoff High T
3,2
3,2
Eoff Low T
2,4
2,4
1,6
1,6
Eoff High T
Eoff Low T
Eon High T
Eon Low T
Eon High T
0,8
0,8
Eon Low T
0
0
0
30
60
90
120
I C (A)
0
150
2
4
6
8
RG( Ω )
10
With an inductive load at
Tj =
°C
25/150
V CE =
300
V
V GE =
±15
V
R gon =
2
Ω
R goff =
2
Ω
With an inductive load at
Tj =
°C
25/150
V CE =
300
V
V GE =
±15
V
IC =
75
A
figure 7.
Half-Bridge Switch
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
figure 8.
Half-Bridge Switch
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
E (mWs)
2,5
E (mWs)
2,5
Erec
2
2
Tj = Tjmax -25°C
Tj = Tjmax -25°C
1,5
Erec
1,5
Tj = 25°C
Erec
1
1
Tj = 25°C
0,5
Erec
0,5
0
0
0
30
60
90
120
I C (A)
150
0
With an inductive load at
Tj =
25/150
°C
V CE =
300
V
V GE =
±15
V
R gon =
2
Ω
copyright Vincotech
2
4
6
8
RG( Ω )
10
With an inductive load at
Tj =
25/150
°C
V CE =
300
V
V GE =
±15
V
IC =
75
A
4
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Half-Bridge
figure 9.
Half-Bridge Switch
figure 10.
Half-Bridge Switch
Typical switching times as a
Typical switching times as a
function of collector current
t = f(I C)
function of gate resistor
t = f(R G)
1
t ( µs)
t ( µs)
1
tdoff
tdoff
tdon
tdon
0,1
tf
0,1
tf
tr
tr
0,01
0,01
0,001
0,001
0
30
60
90
120
I C (A)
150
0
With an inductive load at
Tj =
150
°C
V CE =
300
V
V GE =
±15
V
R gon =
2
Ω
R goff =
2
Ω
2
4
6
8
RG( Ω )
10
With an inductive load at
Tj =
150
°C
V CE =
300
V
V GE =
±15
V
IC =
75
A
figure 11.
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
Half-Bridge Diode
figure 12.
Half-Bridge Diode
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t rr = f(R gon)
t rr( µs)
0,25
t rr( µs)
0,14
trr
0,12
Tj = Tjmax -25°C
trr
0,2
Tj = Tjmax -25°C
Tj = 25°C
trr
0,1
0,15
0,08
trr
Tj = 25°C
0,06
0,1
0,04
0,05
0,02
0
0
0
At
Tj =
V CE =
V GE =
R gon =
30
25/150
300
±15
2
copyright Vincotech
60
90
120
I C (A)
0
150
At
Tj =
VR=
IF=
V GE =
°C
V
V
Ω
5
2
25/150
300
75
±15
4
6
8
R g on ( Ω ) 10
°C
V
A
V
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Half-Bridge
figure 13.
Half-Bridge Diode
figure 14.
Half-Bridge Diode
Typical reverse recovery charge as a
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
function of IGBT turn on gate resistor
Q rr = f(R gon)
10
Qrr( µC)
Qrr( µC)
10
Qrr
8
8
Tj = Tjmax -25°C
Qrr
Tj = Tjmax -25°C
6
6
Qrr
Tj = 25°C
4
4
Tj = 25°C
Qrr
2
2
0
0
0
At
At
Tj =
V CE =
V GE =
R gon =
30
60
90
120
I C (A)
150
0
2
4
25/150
300
°C
V
At
Tj =
VR=
25/150
300
°C
V
±15
2
V
Ω
IF=
V GE =
75
±15
A
V
figure 15.
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Half-Bridge Diode
6
8
R g on ( Ω)
10
figure 16.
Half-Bridge Diode
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon)
150
IrrM (A)
150
IrrM (A)
IRRM
120
120
IRRM
Tj = Tjmax -25°C
Tj = Tjmax - 25°C
90
90
IRRM
Tj = 25°C
Tj = 25°C
60
60
30
30
IRRM
0
0
0
At
Tj =
V CE =
V GE =
R gon =
30
25/150
300
±15
2
copyright Vincotech
60
90
120
I C (A)
0
150
At
Tj =
VR=
IF=
V GE =
°C
V
V
Ω
6
2
25/150
300
75
±15
4
6
8
R gon ( Ω )
10
°C
V
A
V
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Half-Bridge
figure 17.
Half-Bridge Diode
figure 18.
Half-Bridge Diode
Typical rate of fall of forward
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
10000
direc / dt (A/ µs)
direc / dt (A/µ s)
10000
dI0/dt
dIrec/dt
8000
dI0/dt
dIrec/dt
8000
Tj = 25°C
dIrec/dtLow T
Tj = Tjmax - 25°C
6000
6000
di0/dtHigh T
dIo/dtLow T
4000
4000
dIrec/dtHigh T
2000
2000
dIrec/dtHigh T
0
0
0
At
Tj =
V CE =
V GE =
R gon =
30
60
90
I C (A)
120
150
0
4
25/150
300
°C
V
At
Tj =
VR=
25/150
300
°C
V
±15
2
V
Ω
IF=
V GE =
75
±15
A
V
figure 19.
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
Half-Bridge Switch
6
figure 20.
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
R gon ( Ω )
8
10
Half-Bridge Diode
Zth(j-s) (K/W)
101
Zth(j-s) (K/W)
101
100
100
10
2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-1
10-2
10-2
10-5
At
D =
R th(j-s) =
10-4
10-3
10-2
10-1
100
t p (s)
10-5
10110
At
D =
R th(j-s) =
tp/T
0,83
K/W
10-4
10-3
1,18
R (K/W)
2,50E-02
1,27E-01
3,97E-01
R (K/W)
3,13E-02
1,33E-01
5,21E-01
copyright Vincotech
100
t p (s)
10110
K/W
FWD thermal model values
1,75E-01 4,04E-02
6,97E-02 8,14E-03
3,66E-02 4,72E-04
10-1
tp/T
IGBT thermal model values
Tau (s)
9,78E+00
1,12E+00
1,86E-01
10-2
Tau (s)
9,08E+00
1,00E+00
1,71E-01
2,81E-01 3,39E-02
1,36E-01 6,90E-03
7,81E-02 4,32E-04
7
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Half-Bridge
figure 21.
Half-Bridge Switch
figure 22.
Half-Bridge Switch
Power dissipation as a
Collector current as a
function of heatsink temperature
P tot = f(T s)
function of heatsink temperature
I C = f(T s)
100
IC (A)
Ptot (W)
240
200
80
160
60
120
40
80
20
40
0
0
0
At
Tj =
50
175
100
150
T s ( o C)
0
200
At
Tj =
V GE =
°C
figure 23.
Half-Bridge Diode
50
175
15
100
T s ( o C)
200
°C
V
figure 24.
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
150
Half-Bridge Diode
Forward current as a
function of heatsink temperature
I F = f(T s)
90
Ptot (W)
IF (A)
150
75
120
60
90
45
60
30
30
15
0
0
0
At
Tj =
50
175
copyright Vincotech
100
150
T s ( o C)
200
0
At
Tj =
°C
8
50
175
100
150
T s ( o C)
200
°C
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Half-Bridge
figure 25.
Safe operating area as a function
Half-Bridge Switch
figure 26.
Gate voltage vs Gate charge
of collector-emitter voltage
I C = f(V CE)
V GE = f(Q g)
Half-Bridge Switch
IC (A)
VGE (V)
21
18
10uS
103
100uS
DC
100mS
15
120 V
480 V
1mS
10mS
102
12
9
101
6
100
3
0
10-1 0
10
At
D =
Ts =
V GE =
Tj =
101
102
V CE (V)
0
103
At
IC =
single pulse
80
±15
T jmax
copyright Vincotech
100
75
200
300
400
500
Q g (nC)
600
A
ºC
V
9
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Switching Definitions
General conditions
Tj
= 150 °C
= 2Ω
R gon
R goff
= 2Ω
figure 1.
Half-Bridge Switch
Turn-off Switching Waveforms & definition of t doff, t Eoff
figure 2.
Half-Bridge Switch
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off)
(t E on = integrating time for E on)
150
260
%
%
125
tdoff
IC
210
VCE
100
VCE 90%
VGE 90%
160
75
VCE
110
IC
50
tEoff
25
VGE
-25
-0,2
IC10%
VGE10%
10
0
VGE
tdon
60
VCE 3%
tEon
IC 1%
-40
-0,05
0,1
0,25
0,4
0,55
2,8
time (us)
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
-15
15
300
t doff =
t E off =
2,95
3,1
V
V
V
V GE (0%) =
V GE (100%) =
V C (100%) =
75
A
I C (100%) =
75
A
0,20
0,45
μs
μs
t don =
t E on =
0,13
0,23
μs
μs
figure 3.
Half-Bridge Switch
Turn-off Switching Waveforms & definition of t f
-15
15
300
3,25
3,4
3,55
time(us)
V
V
V
figure 4.
Half-Bridge Switch
Turn-on Switching Waveforms & definition of t r
140
260
%
%
120
fitted
220
VCE
IC
100
180
IC 90%
80
140
IC 60%
60
VCE
100
IC 40%
40
IC90%
tr
60
20
IC10%
0
-20
0,05
20
tf
0,1
0,15
0,2
0,25
0,3
IC
-20
3,03
0,35
time (us)
IC10%
3,11
3,19
3,35
time(us)
V C (100%) =
I C (100%) =
300
75
V
A
V C (100%) =
I C (100%) =
300
75
V
A
tf =
0,105
μs
tr =
0,02
μs
copyright Vincotech
3,27
10
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Switching Definitions
figure 5.
Half-Bridge Switch
Turn-off Switching Waveforms & definition of t Eoff
figure 6.
Half-Bridge Switch
Turn-on Switching Waveforms & definition of t Eon
120
120
%
Poff
%
Eoff
Eon
100
100
80
80
60
60
40
40
20
20
Pon
VGE 10%
VCE 3%
VGE 90%
0
0
tEoff
tEon
IC 1%
-20
-0,2
-0,05
0,1
0,25
0,4
-20
2,95
0,55
3,05
3,15
3,25
3,35
time(us)
time (us)
P off (100%) =
E off (100%) =
t E off =
22,63
2,26
0,45
kW
mJ
μs
P on (100%) =
E on (100%) =
t E on =
22,63
0,89
0,23
kW
mJ
μs
figure 7.
Half-Bridge Switch
Turn-off Switching Waveforms & definition of t rr
120
Id
%
80
trr
40
Vd
fitted
0
IRRM10%
-40
-80
-120
IRRM90%
IRRM100%
-160
3,05
3,1
3,15
3,2
3,25
3,3
3,35
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
t rr =
copyright Vincotech
11
300
75
111
0,13
V
A
A
μs
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Switching Definitions
figure 8.
Half-Bridge Diode
Turn-on Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
figure 9.
Half-Bridge Diode
Turn-on Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec)
150
120
%
%
Id
Qrr
Erec
100
100
80
50
tQrr
tErec
60
0
40
-50
20
-100
-150
3,05
Prec
0
3,15
3,25
3,35
3,45
-20
3,05
3,55
3,15
3,25
3,35
time(us)
I d (100%) =
Q rr (100%) =
t Q rr =
copyright Vincotech
75
6,50
0,26
A
μC
μs
P rec (100%) =
E rec (100%) =
t E rec =
12
22,63
1,57
0,26
3,45
3,55
time(us)
kW
mJ
μs
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
without thermal paste with solder pins 12mm housing
10-FZ062PA075SA-P993F08
with thermal paste with solder pins 12mm housing
10-FZ062PA075SA-P993F08-/3/
without thermal paste with solder pins 17mm housing
10-F0062PA075SA-P993F09
with thermal paste with solder pins 17mm housing
10-F0062PA075SA-P993F09-/3/
Text
Name
Date code
UL & VIN
Lot
Serial
NN-NNNNNNNNNNNNNN-TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Datamatrix
Outline
Pin table
Pin
X
Y
Function
1
0
0
DC-
2
0
2,3
DC-
3
0
4,6
DC-
4
0
6,9
DC-
5
0
15,6
DC+
6
0
17,9
DC+
7
0
20,2
DC+
8
0
22,5
DC+
9
13,85
16,45
G1
10
16,75
16,45
S1
11
33,5
11,5
OUT
12
33,5
9,2
OUT
13
33,5
6,9
OUT
14
33,5
4,6
OUT
15
33,5
2,3
OUT
16
33,5
0
OUT
17
13,85
13,55
OUT
18
19,55
4,95
S2
19
19,55
7,85
G2
copyright Vincotech
13
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Pinout
Code & Marking
Identification
ID
Component
Voltage
Current
Function
T1, T2
IGBT
600 V
75 A
Half-Bridge Switch
D1, D2
FWD
600 V
75 A
Half-Bridge Diode
copyright Vincotech
14
Comment
04 Jun. 2016 / Revision 2
10-FZ062PA075SA-P993F08
10-F0062PA075SA-P993F09
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
>SPQ
135
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
10-Fx062PA075SA-P993F0x-D2-14
04. Jun. 2016
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
15
04 Jun. 2016 / Revision 2
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