Datasheet

Photomicrosensor (Transmissive)
EE-SG3/EE-SG3-B
Be sure to read Precautions on page 25.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Dust-proof model.
• Solder terminal model (EE-SG3).
• PCB terminal model (EE-SG3-B).
■ Absolute Maximum Ratings (Ta = 25°C)
13
19±0.1
25.4±0.2
Two, 3.2±0.2
dia. holes
Item
Emitter
3.6±0.2
Optical axis
1.2
Four, 0.5
Four, 0.25
7.62±0.3
Detector
2.54±0.3
0.8
Four, 1.5
2.54
0.6
Cross section AA
Cross section AA
Internal Circuit
K
Ambient temperature
C
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Tsol
260°C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
Rated value
IF
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
A
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Forward voltage
Symbol
Value
VF
1.2 V typ., 1.5 V max.
Condition
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
2 mA min., 40 mA max.
IF = 15 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 30 mA, IL = 1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
106
EE-SG3/EE-SG3-B Photomicrosensor (Transmissive)
■ Engineering Data
PC
Ta = 25°C
VCE = 10 V
Ta = −30°C
Ta = 25°C
Ta = 70°C
Forward voltage VF (V)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
IF = 25 mA
IF = 20 mA
IF = 15 mA
IF = 10 mA
Relative light current IL (%)
Ta = 25°C
IF = 20 mA
VCE = 5 V
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
Dark current ID (nA)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light current IL (mA)
Light Current vs. Forward Current
Characteristics (Typical)
Light current IL (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 5 mA
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
Relative light current IL (%)
Response time tr, tf (μs)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Load resistance RL (kΩ)
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SG3/EE-SG3-B Photomicrosensor (Transmissive)
107
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