Photomicrosensor (Transmissive) EE-SX1128 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • General-purpose model with a 4.2-mm-wide slot. PCB mounting type. High resolution with a 0.5-mm-wide aperture. Horizontal sensing aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Emitter Detector Ambient temperature Internal Circuit K C Terminal No. A K C E Dimensions E Name Anode Cathode Collector Emitter ±0.100 4 < × ≤ 18 ±0.200 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 0<×≤4 Rated value IF Soldering temperature Unless otherwise specified, the tolerances are as shown below. A Symbol Forward current ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Detector Forward voltage Symbol Value VF 1.2 V typ., 1.5 V max. Condition IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 10 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA 76 EE-SX1128 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Forward Voltage Characteristics (Typical) Ta = 25°C Ta = 70°C IF = 50 mA 14 IF = 40 mA 12 10 IF = 30 mA 8 IF = 20 mA 6 4 IF = 10 mA 14 12 10 8 6 Forward current IF (mA) Forward voltage VF (V) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Dark current ID (nA) Light current IL (mA) 16 16 2 Relative light current IL (%) Ta = 25°C Light current IL (mA) Ta = −30°C 4 Light Current vs. Collector−Emitter Voltage Characteristics (Typical) 18 Ta = 25°C VCE = 10 V 18 Ambient temperature Ta (°C) 20 Light Current vs. Forward Current Characteristics (Typical) 20 Forward current IF (mA) Forward current IF (mA) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating 2 Ambient temperature Ta (°C) Response Time vs. Load Resistance Characteristics (Typical) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 120 d 80 60 40 20 −0.5 −0.25 0 0.25 0.5 0.75 Distance d (mm) 1.0 Relative light current IL (%) 100 0 Load resistance RL (kΩ) IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) Response time tr, tf (μs) Relative light current IL (%) 120 VCC = 5 V Ta = 25°C IF = 20 mA VCE = 10 V Ta = 25°C 100 (Center of optical axis) Collector−Emitter voltage VCE (V) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1128 Photomicrosensor (Transmissive) 77