Datasheet

Photomicrosensor (Transmissive)
EE-SX1128
Be sure to read Precautions on page 25.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
General-purpose model with a 4.2-mm-wide slot.
PCB mounting type.
High resolution with a 0.5-mm-wide aperture.
Horizontal sensing aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Detector
Ambient temperature
Internal Circuit
K
C
Terminal No.
A
K
C
E
Dimensions
E
Name
Anode
Cathode
Collector
Emitter
±0.100
4 < × ≤ 18
±0.200
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
0<×≤4
Rated value
IF
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
A
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Forward voltage
Symbol
Value
VF
1.2 V typ., 1.5 V max.
Condition
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 10 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
76
EE-SX1128 Photomicrosensor (Transmissive)
■ Engineering Data
Forward Current vs. Forward
Voltage Characteristics (Typical)
Ta = 25°C
Ta = 70°C
IF = 50 mA
14
IF = 40 mA
12
10
IF = 30 mA
8
IF = 20 mA
6
4
IF = 10 mA
14
12
10
8
6
Forward current IF (mA)
Forward voltage VF (V)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
IF = 20 mA
VCE = 5 V
Dark current ID (nA)
Light current IL (mA)
16
16
2
Relative light current IL (%)
Ta = 25°C
Light current IL (mA)
Ta = −30°C
4
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
18
Ta = 25°C
VCE = 10 V
18
Ambient temperature Ta (°C)
20
Light Current vs. Forward Current
Characteristics (Typical)
20
Forward current IF (mA)
Forward current IF (mA)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
2
Ambient temperature Ta (°C)
Response Time vs. Load Resistance Characteristics (Typical)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
d
80
60
40
20
−0.5 −0.25
0
0.25
0.5
0.75
Distance d (mm)
1.0
Relative light current IL (%)
100
0
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
Response time tr, tf (μs)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
Collector−Emitter voltage VCE (V)
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1128 Photomicrosensor (Transmissive)
77
Similar pages