Data Sheet

2N7002BKW
60 V, 310 mA N-channel Trench MOSFET
Rev. 1 — 17 June 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
„
„
„
„
„
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
„
„
„
„
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS
VGS
Conditions
Min
Typ
Max
Unit
drain-source voltage
Tamb = 25 °C
-
-
60
V
gate-source voltage
Tamb = 25 °C
-
-
±20
V
ID
drain current
Tamb = 25 °C;
VGS = 10 V
-
-
310
mA
RDSon
drain-source on-state
resistance
Tj = 25 °C;
VGS = 10 V;
ID = 500 mA
-
1
1.6
Ω
[1]
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002BKW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning
Pin
Symbol
Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
G
1
2
S
017aaa000
3. Ordering information
Table 3.
Ordering information
Type number
2N7002BKW
Package
Name
Description
Version
SC-70
plastic surface-mounted package; 3 leads
SOT323
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
2N7002BKW
X9*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tamb = 25 °C
-
60
V
VGS
gate-source voltage
Tamb = 25 °C
-
±20
V
ID
IDM
2N7002BKW
Product data sheet
drain current
VGS = 10 V
peak drain current
[1]
Tamb = 25 °C
-
310
mA
Tamb = 100 °C
-
215
mA
-
1.2
A
Tamb = 25 °C;
single pulse; tp ≤ 10 μs
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
2 of 16
2N7002BKW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Ptot
Parameter
Conditions
total power dissipation
Tamb = 25 °C
Min
Max
Unit
[2]
-
275
mW
[1]
-
330
mW
Tsp = 25 °C
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
-
880
mW
150
°C
−55
+150
°C
−65
+150
°C
Source-drain diode
source current
IS
Tamb = 25 °C
[1]
-
310
mA
human body model
[3]
-
2000
V
ESD maximum rating
electrostatic discharge
voltage
VESD
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3]
Measured between all pins.
017aaa001
120
017aaa002
120
Pder
(%)
Ider
(%)
80
80
40
40
0
−75
−25
25
75
0
−75
125
175
Tamb (°C)
P tot
P der = ------------------------ × 100 %
P tot ( 25°C )
Fig 1.
Product data sheet
25
75
125
175
Tamb (°C)
ID
I der = -------------------- × 100 %
I D ( 25°C )
Normalized total power dissipation as a
function of ambient temperature
2N7002BKW
−25
Fig 2.
Normalized continuous drain current as a
function of ambient temperature
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Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
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2N7002BKW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
017aaa052
10
ID
(A)
Limit RDSon = VDS/ID
1
(1)
(2)
10−1
(3)
(4)
(5)
10−2
(6)
10−3
10−1
1
102
10
VDS (V)
IDM = single pulse
(1) tp = 100 μs
(2) tp = 1 ms
(3) tp = 10 ms
(4) tp = 100 ms
(5) DC; Tsp = 25 °C
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
2N7002BKW
Product data sheet
Thermal characteristics
Parameter
Conditions
thermal resistance from
junction to ambient
in free air
thermal resistance from
junction to solder point
Min
Typ
Max
Unit
[1]
-
395
455
K/W
[2]
-
330
380
K/W
-
-
140
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
4 of 16
2N7002BKW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
017aaa053
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.33
0.25
102
0.1
10
0
0.2
0.05
0.02
0.01
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa054
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.33
102
0.25
10
0.2
0.1
0.05
0
0.02
0.01
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2N7002BKW
Product data sheet
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Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
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2N7002BKW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
60
-
-
V
1.1
1.6
2.1
V
Tj = 25 °C
-
-
1
μA
Tj = 150 °C
-
-
10
μA
-
-
10
μA
-
1.3
2
Ω
-
1
1.6
Ω
-
550
-
mS
-
0.5
0.6
nC
-
0.2
-
nC
-
0.1
-
nC
-
33
50
pF
-
7
-
pF
-
4
-
pF
-
5
10
ns
-
6
-
ns
-
12
24
ns
-
7
-
ns
0.47
0.75
1.1
V
Static characteristics
V(BR)DSS
drain-source breakdown ID = 10 μA; VGS = 0 V
voltage
VGS(th)
gate-source threshold
voltage
ID = 250 μA; VDS = VGS
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
VGS = ±20 V; VDS = 0 V
[1]
VGS = 5 V; ID = 50 mA
VGS = 10 V; ID = 500 mA
forward
transconductance
gfs
VDS = 10 V; ID = 200 mA
[1]
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
ID = 300 mA;
VDS = 30 V;
VGS = 4.5 V
VGS = 0 V; VDS = 10 V;
f = 1 MHz
VDD = 50 V;
RL = 250 Ω;
VGS = 10 V;
RG = 6 Ω
Source-drain diode
VSD
[1]
2N7002BKW
Product data sheet
source-drain voltage
IS = 115 mA; VGS = 0 V
Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
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Rev. 1 — 17 June 2010
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2N7002BKW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
017aaa039
0.7
VGS = 4.0 V
ID
(A)
0.6
017aaa040
10−3
3.5 V
ID
(A)
3.25 V
0.5
10−4
(1)
0.4
(3)
(2)
3.0 V
0.3
10−5
2.75 V
0.2
2.5 V
0.1
0.0
0.0
1.0
2.0
3.0
4.0
10−6
0.0
1.0
2.0
VDS (V)
3.0
VGS (V)
Tamb = 25 °C
Tamb = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 7.
017aaa041
6.0
Sub-threshold drain current as a function of
gate-source voltage
017aaa042
6.0
RDSon
(Ω)
RDSon
(Ω)
(1)
4.0
4.0
(2)
(3)
2.0
(1)
2.0
(4)
(2)
(5)
0.0
0.0
0.2
0.4
0.6
0.8
0.0
0.0
1.0
2.0
ID (A)
Tamb = 25 °C
4.0
6.0
8.0
10.0
VGS (V)
ID = 500 mA
(1) VGS = 3.25 V
(1) Tamb = 150 °C
(2) VGS = 3.5 V
(2) Tamb = 25 °C
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values
2N7002BKW
Product data sheet
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
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2N7002BKW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
017aaa043
1.0
017aaa044
2.4
ID
(A)
a
0.8
(1)
1.8
(2)
0.6
1.2
0.4
0.6
0.2
0.0
0.0
1.0
2.0
3.0
4.0
5.0
VGS (V)
0.0
−60
VDS > ID × RDSon
0
60
120
180
Tamb (°C)
R DSon
a = ----------------------------R DSon ( 25°C )
(1) Tamb = 25 °C
(2) Tamb = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa045
3.0
Fig 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
017aaa046
102
VGS(th)
(V)
(1)
C
(pF)
(1)
2.0
(2)
(2)
10
(3)
(3)
1.0
0.0
−60
0
60
120
180
Tamb (°C)
ID = 0.25 mA; VDS = VGS
1
10−1
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) typical values
(2) Coss
(3) minimum values
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
ambient temperature
Product data sheet
102
10
VDS (V)
(1) maximum values
2N7002BKW
1
Fig 13. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
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Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
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2N7002BKW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
017aaa047
5.0
VGS
(V)
4.0
VDS
ID
3.0
VGS(pl)
2.0
VGS(th)
VGS
1.0
QGS1
0.0
0.0
QGS2
QGS
0.2
0.4
0.6
0.8
QG (nC)
QGD
QG(tot)
003aaa508
ID = 300 mA; VDD = 6 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
017aaa048
1.2
IS
(A)
0.8
(1)
(2)
0.4
0.0
0.0
0.4
0.8
1.2
VSD (V)
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
2N7002BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
9 of 16
2N7002BKW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 17. Duty cycle definition
2N7002BKW
Product data sheet
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Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
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60 V, 310 mA N-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT323
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 18. Package outline SOT323 (SC-70)
2N7002BKW
Product data sheet
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Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
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60 V, 310 mA N-channel Trench MOSFET
10. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
2.35
0.6
(3×)
3
solder paste
1.3
1
occupied area
0.5
(3×)
Dimensions in mm
0.55
(3×)
sot323_fr
Fig 19. Reflow soldering footprint SOT323 (SC-70)
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
09
(2×)
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
Fig 20. Wave soldering footprint SOT323 (SC-70)
2N7002BKW
Product data sheet
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Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
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60 V, 310 mA N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
2N7002BKW v.1
20100617
Product data sheet
-
-
2N7002BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
13 of 16
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NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
2N7002BKW
Product data sheet
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60 V, 310 mA N-channel Trench MOSFET
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
2N7002BKW
Product data sheet
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60 V, 310 mA N-channel Trench MOSFET
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 June 2010
Document identifier: 2N7002BKW