Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
9NM70-SHS
Power MOSFET
9.0A, 700V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 9NM70-SHS is a Super Junction MOSFET Structure and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.

FEATURES
* RDS(ON) < 0.9Ω @ VGS=10V, ID=4.5A
* High switching Speed
* 100% avalanche tested
* Improved dv/dt capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:
Lead Free
9NM70L-TA3-T
9NM70L-TF1-T
9NM70L-TF2-T
9NM70L-TF3-T
9NM70L-TM3-R
9NM70L-TN3-R
Pin Assignment: G: Gate
Halogen Free
9NM70G-TA3-T
9NM70G-TF1-T
9NM70G-TF2-T
9NM70G-TF3-T
9NM70G-TM3-R
9NM70G-TN3-R
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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QW-R205-138.a
9NM70-SHS

Preliminary
Power MOSFET
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Continuous
TC=25°C
9
A
ID
VGS @ 10V
Drain Current
TC=100°C
5
A
36
A
Pulsed (Note 2)
IDM
Avalanche Current
IAR
3
A
Avalanche Energy Single Pulsed (Note 3)
EAS
351
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.55
V/ns
TO-220
156
TO-220F/TO-220F1
44
Power Dissipation TC = 25°C
PD
W
TO-220F2
48
TO-251/TO-252
100
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=159mH, IAS=2.1A, VDD=50V, RG=0 Ω, Starting TJ=25°C
4. ISD ≤ 9A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220/TO-220F
TO-220F1/TO-220F2
TO-251/TO-252
TO-220
TO-220F/TO-220F1
TO-220F2
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
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θJA
θJC
RATING
62.5
110
0.88
2.8
2.6
1.25
UNIT
°C/W
°C/W
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9NM70-SHS

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
SYMBOL
TEST CONDITIONS
BVDSS
ID=1mA, VGS=0V
700
△BVDSS/△TJ Reference to 25°C, ID=1mA
VDS=700V, VGS=0V, TJ=25°C
IDSS
VDS=560V, VGS=0V, TJ=125°C
VGS=+30V
IGSS
VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=4.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
VDS=50V, VGS=10V, ID=1.3A ,
Gate to Source Charge
QGS
IG=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
Rise Time
tR
VDD=30V, VGS=10V, ID=0.5A,
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
VD=VG=0V, VS=1.5V
Maximum Body-Diode Pulsed Current (Note 1)
ISM
Drain-Source Diode Forward Voltage (Note 2)
VSD
IS=9A, VGS=0V, TJ = 25°C
Reverse Recovery Time
trr
VGS = 0 V, IS = 7.0A,
dIF/dt = 100 A/μs
Reverse Recovery Charge (Note 1)
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
V
0.6
V/°C
10
µA
100 µA
+100 nA
-100 nA
2.5
4.5
0.9
V
Ω
560
360
26
pF
pF
pF
70
6.8
15
60
90
200
70
nC
nC
nC
ns
ns
ns
ns
9
36
1.4
340
4.27
A
A
V
ns
μC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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