UNISONIC TECHNOLOGIES CO., LTD Preliminary 9NM70-SHS Power MOSFET 9.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 9NM70-SHS is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications. FEATURES * RDS(ON) < 0.9Ω @ VGS=10V, ID=4.5A * High switching Speed * 100% avalanche tested * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Note: Lead Free 9NM70L-TA3-T 9NM70L-TF1-T 9NM70L-TF2-T 9NM70L-TF3-T 9NM70L-TM3-R 9NM70L-TN3-R Pin Assignment: G: Gate Halogen Free 9NM70G-TA3-T 9NM70G-TF1-T 9NM70G-TF2-T 9NM70G-TF3-T 9NM70G-TM3-R 9NM70G-TN3-R D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R205-138.a 9NM70-SHS Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-138.a 9NM70-SHS Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Continuous TC=25°C 9 A ID VGS @ 10V Drain Current TC=100°C 5 A 36 A Pulsed (Note 2) IDM Avalanche Current IAR 3 A Avalanche Energy Single Pulsed (Note 3) EAS 351 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.55 V/ns TO-220 156 TO-220F/TO-220F1 44 Power Dissipation TC = 25°C PD W TO-220F2 48 TO-251/TO-252 100 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=159mH, IAS=2.1A, VDD=50V, RG=0 Ω, Starting TJ=25°C 4. ISD ≤ 9A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220/TO-220F TO-220F1/TO-220F2 TO-251/TO-252 TO-220 TO-220F/TO-220F1 TO-220F2 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATING 62.5 110 0.88 2.8 2.6 1.25 UNIT °C/W °C/W 3 of 7 QW-R205-138.a 9NM70-SHS Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse SYMBOL TEST CONDITIONS BVDSS ID=1mA, VGS=0V 700 △BVDSS/△TJ Reference to 25°C, ID=1mA VDS=700V, VGS=0V, TJ=25°C IDSS VDS=560V, VGS=0V, TJ=125°C VGS=+30V IGSS VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG VDS=50V, VGS=10V, ID=1.3A , Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) Rise Time tR VDD=30V, VGS=10V, ID=0.5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS VD=VG=0V, VS=1.5V Maximum Body-Diode Pulsed Current (Note 1) ISM Drain-Source Diode Forward Voltage (Note 2) VSD IS=9A, VGS=0V, TJ = 25°C Reverse Recovery Time trr VGS = 0 V, IS = 7.0A, dIF/dt = 100 A/μs Reverse Recovery Charge (Note 1) QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V 0.6 V/°C 10 µA 100 µA +100 nA -100 nA 2.5 4.5 0.9 V Ω 560 360 26 pF pF pF 70 6.8 15 60 90 200 70 nC nC nC ns ns ns ns 9 36 1.4 340 4.27 A A V ns μC 4 of 7 QW-R205-138.a 9NM70-SHS Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-138.a 9NM70-SHS Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-138.a 9NM70-SHS Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-138.a