Datasheet

UNISONIC TECHNOLOGIES CO., LTD
9N95-E
Advance
Power MOSFET
9A, 950V N-CHANNEL
POWER MOSFET
DESCRIPTION

The UTC 9N95-E uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is suitable
for use as a load switch or in PWM applications.
FEATURES

* RDS(ON) < 1.4Ω @ VGS = 10V, ID = 4.5A
* Ultra Low Gate Charge ( Typical 45 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Note:

Ordering Number
Lead Free
Halogen Free
9N95L-TC3-T
9N95G-TC3-T
Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-230
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R209-068.a
9N95-E

Advance
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
PARAMETER
VDSS
950
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current (TC = 25°C)
ID
9.0
A
Pulsed Drain Current (Note 2)
IDM
36
A
Avalanche Current (Note 2)
IAR
9.0
A
Single Pulsed(Note 3)
EAS
900
mJ
Repetitive(Note 2)
EAR
28
mJ
4.0
V/ns
Avalanche Energy
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
Linear Derating Factor above TC = 25°C
Junction Temperature
dv/dt
PD
TJ
147
W
1.176
W/°C
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
RATINGS
62.5
0.85
UNIT
°C/W
°C/W
2 of 7
www.unisonic.com.tw
QW-R209-068.a
9N95-E

Advance
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250μA
950
V
Drain-Source Leakage Current
IDSS
VDS = 950 V, VGS = 0 V
10
μA
Forward
IGSSF
VGS = 30 V, VDS = 0 V
100 nA
Gate-Body Leakage Current
VGS = -30 V, VDS = 0 V
-100 nA
Reverse
IGSSR
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.99
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
3.0
5.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS = 10V, ID = 4.5A
1.05 1.4
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
2100 2730 pF
VDS = 25 V, VGS = 0 V,
Output Capacitance
COSS
175 230 pF
f = 1.0 MHz
14
18
pF
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
45
58
nC
VDS = 760V, ID = 11.0A,
Gate-Source Charge
QGS
13
nC
VGS = 10 V (Note 1,2)
18
nC
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
50 110 ns
VDD = 475V, ID =11.0 A,
Turn-On Rise Time
tR
120 250 ns
RG = 25Ω (Note 1, 2)
100 210 ns
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
75 160 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 9.0 A
1.4
V
Maximum Continuous Drain-Source Diode
IS
9.0
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
36
A
Forward Current
Reverse Recovery Time
trr
550
ns
VGS = 0 V, IS = 9.0 A,
dIF / dt =100 A/μs (Note 1)
Reverse Recovery Charge
QRR
6.5
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
3 of 7
www.unisonic.com.tw
QW-R209-068.a
9N95-E

Advance
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
4 of 7
www.unisonic.com.tw
QW-R209-068.a
9N95-E

Advance
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
VDD
VDS(t)
Time
tP
Unclamped Inductive Switching Waveforms
5 of 7
www.unisonic.com.tw
QW-R209-068.a
9N95-E
Advance
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
6 of 7
www.unisonic.com.tw
QW-R209-068.a
9N95-E
Advance
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
7 of 7
www.unisonic.com.tw
QW-R209-068.a
Similar pages