UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT24N06 Power MOSFET 24A, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC UTT24N06 is an N-Channel enhancement mode MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and low gate charge, etc. The UTC UTT24N06 is suitable for switching application in Industry and converter application in LED TV, etc. FEATURES * RDS(ON) < 40 mΩ @ VGS=10V, IDS=12A RDS(ON) < 50 mΩ @ VGS=5V, IDS=11A * Low RDS(ON) SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT24N06L-TM3-T UTT24N06G-TM3-T UTT24N06L-TN3-R UTT24N06G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel 1 of 5 QW-R209-124.b UTT24N06 Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R209-124.b UTT24N06 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±16 V Continuous Drain Current Continuous ID 24 A Pulsed Drain Current Pulsed (Note 2) IDM 96 A Avalanche Current (Note 3) IAR 17.8 A Avalanche energy Single Pulsed (Note 3) EAS 160 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.27 V/nS Power Dissipation PD 60 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 1.0mH, IAS = 17.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD≤12A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 110 2.1 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V Gate Leakage Current IGSS VGS=±16V,VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, IDS=250µA Drain-Source On-State Resistance VGS=10V, IDS=12A RDS(ON) (Note 1) VGS=5.0V, IDS=11A DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2) Total Gate Charge (Note 1) QG VDS=30V, VGS=10V, ID=1.3A Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-on Delay Time (Note 1) tD(ON) Rise Time tR VDS=30V, VGS=10V, ID=0.5A, RG=25Ω (Note 1, 2) Turn-off Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IS=12A, VGS=0V Reverse Recovery Time (Note 1) trr IS=12A, VGS=0V dIF/dt=100A/μs Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 1.0 1 ±10 V µA µA 3.0 40 50 V mΩ mΩ 1080 130 85 pF pF pF 115 6 8 36 49 320 108 nC nC nC ns ns ns ns 0.8 124 165 12 48 1.3 A A V ns μC 3 of 5 QW-R209-124.b UTT24N06 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R209-124.b UTT24N06 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS VGS ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-124.b