Datasheet

UNISONIC TECHNOLOGIES CO., LTD
1N60A-CB
Preliminary
Power MOSFET
0.5A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 1N60A-CB is a high voltage MOSFET and is designed
to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) <10Ω @ VGS = 10V, ID = 0.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
1N60AL-T92-B
1N60AG-T92-B
TO-92
1N60AL-T92-K
1N60AG-T92-K
TO-92
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Box
Bulk
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R205-115.a
1N60A-CB
Preliminary
Power
MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
0.5
A
Pulsed Drain Current (Note 2)
IDM
2
A
Single Pulse(Note 3)
EAS
80
mJ
Avalanche Energy
Repetitive(Note 2)
EAR
3.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/ dt
5.5
V/ns
Power Dissipation (TC=25°C)
3
W
PD
Derate above 25°C
0.025
W/°C
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=159mH, IAS=1.0A, VDD=25V, RG=0Ω, Starting TJ=25°C
4. ISD≤1.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
160
88
UNIT
°С/W
°С/W
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QW-R205-115.a
1N60A-CB
Preliminary
Power
MOSFET

ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
Drain-Source Leakage Current (TJ =25°C)
VDS = 600V, VGS = 0V
IDSS
Drain-Source Leakage Current (TJ =125°C)
Forward
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A
Gate-Source Charge
QGS
IG=100μA (Note 1,2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD (ON)
Turn-On Rise Time
tR
VDD=30V, VGS=10, ID=0.5A,
RG=25Ω (Note 1,2)
Turn-Off Delay Time
tD (OFF)
Turn-Off Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, ISD = 1.0A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
VGS=0V, ISD = 1.0A
di/dt
= 100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
600
V
10
10
100
-100
2.0
4.0
10
μA
nA
nA
V
Ω
116
21
4.5
pF
pF
pF
10
1.3
0.5
26
17
56
26
nC
nC
nC
ns
ns
ns
ns
184
0.4
1.4
V
1.0
A
4.0
A
ns
μC
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Preliminary
Power
MOSFET

TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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1N60A-CB
Preliminary
Power
MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
tD(ON)
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
0.2μF
tF
Switching Waveforms
Same Type
as D.U.T.
50kΩ
tD(OFF)
tR
QG
10V
0.3μF
QGS
VDS
QGD
VGS
DUT
1mA
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-115.a
1N60A-CB
Preliminary
Power
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 7
QW-R205-115.a
1N60A-CB
Preliminary
Power
MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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