Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4NM70-SHA
Preliminary
Power MOSFET
4.0A, 700V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 4NM70-SHA is an Super Junction MOSFET
Structure and is designed to have better characteristics, such as
fast switching time, low gate charge, low on-state resistance and
high rugged avalanche. This high speed switching power MOSFET
is usually used in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < 1.6Ω @ VGS = 10 V, ID = 2.0 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4NM70L-TA3-T
4NM70G-TA3-T
4NM70L-TF3-T
4NM70G-TF3-T
4NM70L-TF1-T
4NM70G-TF1-T
4NM70L-TF2-T
4NM70G-TF2-T
4NM70L-TM3-R
4NM70G-TM3-R
4NM70L-TN3-R
4NM70G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
1 of 7
QW-R209-130.a
4NM70-SHA

Preliminary
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R209-130.a
4NM70-SHA

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
4.0
A
Continuous
ID
4.0
A
Drain Current
16
A
Pulsed (Note 2)
IDM
Single Pulsed (Note 3)
EAS
80
mJ
Avalanche Energy
0.3
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/ TO-251
38
W
TO-252
PD
Power Dissipation
TO-220F/TO-220F1
55
W
TO-220F2
TO-220/ TO-251
0.304
W/°С
TO-252
PD
Derate above 25°C
TO-220F/TO-220F1
0.44
W/°С
TO-220F2
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 159mH, IAS = 1.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤ 4.0A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220/ TO-251
TO-252
Junction to Case
TO-220F/TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
RATING
62.5
UNIT
°C/W
110
3.28
θJC
°C/W
2.27
3 of 7
QW-R209-130.a
4NM70-SHA

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
700
V
VDS = 700 V, VGS = 0 V
10 μA
Forward
VGS = 30 V, VDS = 0 V
100
nA
Gate-Source Leakage Current
IGSS
-100
Reverse
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA, Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.5
4.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.0 A
1.6
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
250
pF
VDS = 25 V, VGS = 0 V, f = 1MHz
Output Capacitance
COSS
160
pF
5
pF
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
38
nC
VDS=50V, VGS=10V, ID=1.3A,
Gate-Source Charge
QGS
4
nC
ID=100µA (Note 1, 2)
8
nC
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
40
ns
Turn-On Rise Time
tR
55
ns
VDS=30V, VGS=10V, ID=0.5A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
92
ns
Turn-Off Fall Time
tF
39
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
4
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
16
A
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 4.0 A
1.4
V
Reverse Recovery Time
trr
270
ns
VGS = 0 V, IS = 4.0 A
dI/dt = 100 A/μs (Note 1)
2.0
μC
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R209-130.a
4NM70-SHA
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R209-130.a
4NM70-SHA

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 7
QW-R209-130.a
4NM70-SHA
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R209-130.a
Similar pages