Datasheet

UNISONIC TECHNOLOGIES CO., LTD
21NM50
Preliminary
Power MOSFET
21A, 500V N-CHANNEL
SUPER-JUNCTION MOSFET

1
1
1
TO-220F1
TO-220F2
FEATURES
* RDS(ON) < 0.22Ω @ VGS=10V, ID=10.5A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

TO-220F
TO-220
DESCRIPTION
The UTC 21NM50 is a Super Junction MOSFET Structure and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.

1
1
TO-247
SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
21NM50L-TA3-T
21NM50G-TA3-T
21NM50L-TF3-T
21NM50G-TF3-T
21NM50L-TF1-T
21NM50G-TF1-T
21NM50L-TF2-T
21NM50G-TF2-T
21NM50L-T47-T
21NM50G-T47-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-247
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
1 of 7
QW-R205-137.b
21NM50

Preliminary
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R205-137.b
21NM50

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
21
A
Drain Current
Pulsed (Note 2)
IDM
45
A
Avalanche Current (Note 2)
IAR
5.4
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
146
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
10
V/ns
TO-220
235
W
TO-220F/TO-220F1
Power Dissipation
PD
390
W
TO-220F2
TO-247
400
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 5.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 21A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-247
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-247
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
UNIT
62.5
°С/W
40
0.53
°С/W
°С/W
5
°С/W
0.31
°С/W
3 of 7
QW-R205-137.b
21NM50

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
Forward
VDS=0V, VGS=30V
Gate-Body Leakage Current
IGSS
Reverse
VDS=0V, VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
RDS(ON) VGS=10V, ID=10.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
QG
VGS=10V, VDS=50V,
ID=1.3A, IG=100µA
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 1)
tD(ON)
VGS=10V, VDS=30V,
Rise Time
tR
ID=0.5A, RG=25Ω
Turn-OFF Delay Time
tD(OFF)
(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
VGS=0V
Maximum Body-Diode Pulsed Current
ISM
Repetitive
Drain-Source Diode Forward Voltage (Note 1)
VSD
IF=IS ,VGS=0V
Body Diode Reverse Recovery Time (Note 1)
trr
VGS=0V, dIF/dt=100A/µs,
IS=21A, VR=100V
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
UNIT
25
+100
-100
V
µA
nA
nA
4.5
0.22
V
Ω
500
2.5
770
640
88
pF
pF
pF
190
10
40
70
180
330
200
nC
nC
nC
ns
ns
ns
ns
21
54
1.5
420
7.1
A
A
V
ns
µC
4 of 7
QW-R205-137.b
21NM50

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R205-137.b
21NM50

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
6 of 7
QW-R205-137.b
21NM50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R205-137.b
Similar pages