UNISONIC TECHNOLOGIES CO., LTD 21NM50 Preliminary Power MOSFET 21A, 500V N-CHANNEL SUPER-JUNCTION MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS(ON) < 0.22Ω @ VGS=10V, ID=10.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness TO-220F TO-220 DESCRIPTION The UTC 21NM50 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications. 1 1 TO-247 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 21NM50L-TA3-T 21NM50G-TA3-T 21NM50L-TF3-T 21NM50G-TF3-T 21NM50L-TF1-T 21NM50G-TF1-T 21NM50L-TF2-T 21NM50G-TF2-T 21NM50L-T47-T 21NM50G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-247 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube 1 of 7 QW-R205-137.b 21NM50 Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-137.b 21NM50 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous ID 21 A Drain Current Pulsed (Note 2) IDM 45 A Avalanche Current (Note 2) IAR 5.4 A Avalanche Energy Single Pulsed (Note 3) EAS 146 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 10 V/ns TO-220 235 W TO-220F/TO-220F1 Power Dissipation PD 390 W TO-220F2 TO-247 400 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 5.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 21A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-247 TO-220 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-247 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS UNIT 62.5 °С/W 40 0.53 °С/W °С/W 5 °С/W 0.31 °С/W 3 of 7 QW-R205-137.b 21NM50 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Drain-Source Leakage Current IDSS VDS=500V, VGS=0V Forward VDS=0V, VGS=30V Gate-Body Leakage Current IGSS Reverse VDS=0V, VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=10.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 1) QG VGS=10V, VDS=50V, ID=1.3A, IG=100µA Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time (Note 1) tD(ON) VGS=10V, VDS=30V, Rise Time tR ID=0.5A, RG=25Ω Turn-OFF Delay Time tD(OFF) (Note 1, 2) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS VGS=0V Maximum Body-Diode Pulsed Current ISM Repetitive Drain-Source Diode Forward Voltage (Note 1) VSD IF=IS ,VGS=0V Body Diode Reverse Recovery Time (Note 1) trr VGS=0V, dIF/dt=100A/µs, IS=21A, VR=100V Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating ambient temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 25 +100 -100 V µA nA nA 4.5 0.22 V Ω 500 2.5 770 640 88 pF pF pF 190 10 40 70 180 330 200 nC nC nC ns ns ns ns 21 54 1.5 420 7.1 A A V ns µC 4 of 7 QW-R205-137.b 21NM50 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-137.b 21NM50 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-137.b 21NM50 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-137.b