Datasheet

AOT12N50/AOB12N50/AOTF12N50
500V, 12A N-Channel MOSFET
General Description
Product Summary
The AOT12N50 & AOB12N50 & AOTF12N50 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
[email protected]
12A
RDS(ON) (at VGS=10V)
< 0.52Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT12N50L & AOTF12N50L & AOB12N50L
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
G
G
D
S
AOT12N50
AOTF12N50
G
D
S
S
AOB12N50
Absolute Maximum Ratings TA=25°C unless otherwise noted
AOT12N50/AOB12N50
Parameter
Symbol
Drain-Source Voltage
500
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
TC=100°C
C
AOTF12N50
±30
ID
S
G
Units
V
V
12
12*
8.4
8.4*
A
IDM
48
Avalanche Current C
IAR
5.5
A
Repetitive avalanche energy C
EAR
454
mJ
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
EAS
908
40
5
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
dv/dt
PD
50
W
2
0.4
-55 to 150
W/ oC
°C
300
°C
AOT12N50/AOB12N50
65
AOTF12N50
65
Units
°C/W
0.5
0.5
-2.5
°C/W
°C/W
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.8.0: April 2014
250
TL
Symbol
RθJA
RθCS
mJ
V/ns
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Page 1 of 6
AOT12N50/AOB12N50/AOTF12N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
600
V
ID=250µA, VGS=0V
0.54
V/ oC
VDS=500V, VGS=0V
1
VDS=400V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
ISM
3.9
4.5
nΑ
V
VGS=10V, ID=6A
0.36
0.52
Ω
VDS=40V, ID=6A
16
1
V
Maximum Body-Diode Continuous Current
12
A
Maximum Body-Diode Pulsed Current
48
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
±100
µA
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
S
0.72
1089
1361
1633
pF
VGS=0V, VDS=25V, f=1MHz
134
167
200
pF
10
12.6
15
pF
VGS=0V, VDS=0V, f=1MHz
1.8
3.6
5.4
Ω
30.7
37
nC
7.6
9
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
3.3
VGS=10V, VDS=400V, ID=12A
Qgd
Gate Drain Charge
13.0
16
nC
tD(on)
Turn-On DelayTime
29
35
ns
tr
Turn-On Rise Time
69
83
ns
tD(off)
Turn-Off DelayTime
82
98
ns
tf
trr
Turn-Off Fall Time
55.5
67
ns
IF=12A,dI/dt=100A/µs,VDS=100V
231
277
Qrr
Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
2.82
3.4
ns
µC
Body Diode Reverse Recovery Time
VGS=10V, VDS=250V, ID=12A,
RG=25Ω
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=5.5A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.8.0: April 2014
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Page 2 of 6
AOT12N50/AOB12N50/AOTF12N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
24
100
10V
16
10
6V
ID(A)
ID (A)
-55°C
VDS=40V
6.5V
20
12
8
125°C
1
VGS=5.5V
25°C
4
0.1
0
0
5
10
15
20
25
2
30
4
VDS (Volts)
Fig 1: On-Region Characteristics
0.8
8
10
Normalized On-Resistance
3
0.7
RDS(ON) (Ω)
6
VGS(Volts)
Figure 2: Transfer Characteristics
0.6
0.5
VGS=10V
0.4
0.3
0
4
8
12
16
20
24
2.5
VGS=10V
ID=6A
2
1.5
1
0.5
0
-100
28
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.0E+02
40
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
25°C
1.0E-02
0.9
1.0E-03
0.8
-100
1.0E-04
-50
0
50
100
150
200
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev.8.0: April 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT12N50/AOB12N50/AOTF12N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=400V
ID=12A
12
Ciss
Capacitance (pF)
VGS (Volts)
1000
9
6
Coss
100
Crss
10
3
1
0
0
5
10
15
20
25
30
35
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
100
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
RDS(ON)
limited
10µs
100µs
1ms
1
DC
10ms
10µs
RDS(ON)
limited
10
ID (Amps)
10
ID (Amps)
0.1
45
100µs
1ms
10ms
1
0.1s
DC
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
0.1
1s
0.01
0.01
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT12N50/AOB12N50 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF12N50 (Note F)
15
Current rating ID(A)
12
9
6
3
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev.8.0: April 2014
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Page 4 of 6
AOT12N50/AOB12N50/AOTF12N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N50/AOB12N50 (Note F)
100
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N50 (Note F)
Rev.8.0: April 2014
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Page 5 of 6
AOT12N50/AOB12N50/AOTF12N50
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.8.0: April 2014
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 6 of 6