Datasheet

AOT12N60FD/AOB12N60FD/AOTF12N60FD
600V, 12A N-Channel MOSFET
General Description
Product Summary
The AOT12N60FD/AOB12N60FD/AOTF12N60FD
have been fabricated using an advanced high voltage
MOSFET process that is designed to deliver high
levels of performance and robustness in popular ACDC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
VDS
ID (at VGS=10V)
[email protected]
12A
RDS(ON) (at VGS=10V)
< 0.65Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT12N60FDL & AOB12N60FDL & AOTF12N60FDL
Top View
TO-220
D
TO-263
D2PAK
TO-220F
D
G
G
D
S
AOT12N60FD
G
D
S
G
AOTF12N60FD
AOB12N60FD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT12N60FD/AOB12N60FD
Drain-Source Voltage
VDS
600
Gate-Source Voltage
Continuous Drain
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy
C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
12
ID
Units
V
V
12*
8
8*
A
IDM
48
IAR
5
A
EAR
375
mJ
EAS
dv/dt
750
5
mJ
V/ns
W
PD
278
50
2.2
0.4
TJ, TSTG
TL
Symbol
RθJA
RθCS
-55 to 150
W/ oC
°C
300
°C
AOT12N60FD/AOB12N60FD
65
AOTF12N60FD
65
Units
°C/W
0.5
0.45
-2.5
°C/W
°C/W
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.4.0:June 2013
AOTF12N60FD
±30
VGS
TC=25°C
S
S
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Page 1 of 6
AOT12N60FD/AOB12N60FD/AOTF12N60FD
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=10mA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
ID=10mA, VGS=0V, TJ=150°C
700
V
ID=10mA, VGS=0V
0.68
V/ oC
VDS=600V, VGS=0V
10
VDS=480V, TJ=125°C
100
±100
2.4
µA
3
4
nΑ
V
0.65
Ω
1.6
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=6A
0.51
gFS
Forward Transconductance
VDS=40V, ID=6A
12
VSD
Diode Forward Voltage
IS=12A,VGS=0V
1.3
IS
Maximum Body-Diode Continuous Current
12
A
ISM
Maximum Body-Diode Pulsed Current
48
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
1310
1659
2010
pF
110
166
220
pF
9
15.8
23
pF
1.8
3.7
5.6
Ω
41
50
nC
32
VGS=10V, VDS=480V, ID=12A
S
8.7
nC
Gate Drain Charge
19
nC
tD(on)
Turn-On DelayTime
34
ns
tr
Turn-On Rise Time
90
ns
tD(off)
Turn-Off DelayTime
120
ns
tf
trr
Turn-Off Fall Time
82
ns
IF=12A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
135
220
0.5
0.8
Qgs
Gate Source Charge
Qgd
Qrr
VGS=10V, VDS=300V, ID=12A,
RG=25Ω
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=5A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: June 2013
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Page 2 of 6
AOT12N60FD/AOB12N60FD/AOTF12N60FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
24
100
10V
6V
16
10
VGS=5.5V
12
125°C
ID(A)
ID (A)
-55°C
VDS=40V
6.5V
20
8
1
25°C
4
0.1
0
0
5
10
15
20
25
30
2
4
VDS (Volts)
Fig 1: On-Region Characteristics
10
3
Normalized On-Resistance
VGS=10V
0.9
RDS(ON) (Ω)
8
VGS(Volts)
Figure 2: Transfer Characteristics
1.2
0.6
0.3
2.5
0
4
8
12
16
20
24
VGS=10V
ID=6A
2
1.5
1
0.5
0
-100
0.0
28
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+02
1.2
1.0E+01
1.1
125°C
1.0E+00
IS (A)
BVDSS (Normalized)
6
1
1.0E-01
25°C
1.0E-02
1.0E-03
0.9
1.0E-04
0.8
-100
1.0E-05
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev.4.0: June 2013
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0.0
0.4
0.8
1.2
1.6
VSD (Volts)
Figure 6: Body-Diode Characteristics(Note E)
Page 3 of 6
AOT12N60FD/AOB12N60FD/AOTF12N60FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
Ciss
VDS=480V
ID=12A
1000
Capacitance (pF)
VGS (Volts)
12
9
6
Coss
100
Crss
10
3
1
0
0
10
20
30
40
50
0.1
60
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
100
10µs
10µs
RDS(ON)
limited
10
100µs
1ms
1
10ms
DC
0.1s
ID (Amps)
ID (Amps)
10
RDS(ON)
limited
100µs
1ms
1
10ms
0.1s
DC
1s
0.1
0.1
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.01
0.01
1
10
100
1000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT12N60FD/AOB12N60FD (Note F)
1
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF12N60FD (Note F)
Current rating ID(A)
15
12
9
6
3
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev.4.0: June 2013
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Page 4 of 6
AOT12N60FD/AOB12N60FD/AOTF12N60FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Ton
0.01
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N60FD/AOB12N60FD (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N60FD (Note F)
15
AOT(B)(TF)12N60FD
10
VDS=100V
IF=12A
dI/dt=100A/µs
IF (A)
5
0
-5
-10
-15
-20
-600
AOT(B)(TF)12N60
-300
0
300
600
900
1200
Trr (nS)
Figure 14: Diode Recovery Characteristics
Rev.4.0: June 2013
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Page 5 of 6
AOT12N60FD/AOB12N60FD/AOTF12N60FD
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.4.0: June 2013
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6