RoHS I2N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. D G FEATURES D GD S TO-220F (12N60AF) TO-220AB (12N60A) RDS(ON) = 0.8Ω @ VGS = 10V S Ultra low gate charge(54nC max.) Low reverse transfer capacitance (C RSS = 25pF typical) Fast switching capability 100% avalanche energy specified D (Drain) Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) 12 VDSS (V) 600 RDS(ON) (Ω) 0.8 @ V GS = 10V QG(nC) max. 54 G (Gate) S (Source) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 600 V DGR Drain to Gate voltage R GS =20KΩ 600 V GS ID Gate to Source voltage UNIT V ±30 T C =25°C 12 T C =100°C 7.4 Continuous Drain Current A I DM Pulsed Drain current(Note 1) 48 I AR Avalanche current(Note 1) 12 E AR Repetitive avalanche energy(Note 1) l AR =12A,R GS =50Ω, V GS =10V E AS Single pulse avalanche energy (Note 2) l AS =12A, L = 10mH 24 mJ dv/dt Peak diode recovery dv/dt(Note 3) 4.5 TO-220AB PD Total power dissipation T C =25°C T STG TL 225 51 Operation junction temperature -55 to 150 Storage temperature -55 to 150 Maximum soldering temperature, for 10 seconds 1.6mm from case Mounting torque, #6-32 or M3 screw www.nellsemi.com Page 1 of 7 ºC 300 10 (1.1) Note: 1. Repetitive rating: pulse width limited by junction temperature. . 2 . I AS =12 A , V DD =50 V , L = 10 mH , R GS =25 Ω, starting T J = 25 °C. 3 . I SD ≤ 12 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J = 2 5 °C. V /ns W TO-220F TJ 790 lbf . in (N . m) RoHS I2N60 Series RoHS SEMICONDUCTOR Nell High Power Products THERMAL RESISTANCE SYMBOL Rth(j-c) PARAMETER Min. Typ. 0.56 TO-220AB Thermal resistance, junction to case ºC/W TO-220F Rth(j-a) UNIT Max. 2.4 TO-220AB 62.5 TO-220F 62.5 Thermal resistance, junction to ambient ºC/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER Min. Typ. Max. UNIT OFF CHARACTERISTICS V(BR)DSS ▲V (BR)DSS/▲T J I DSS Drain to source breakdown voltage I D = 250µA, V GS = 0V Breakdown voltage temperature coefficient I D = 250 µ A, V DS =V GS Drain to source leakage current 600 V V/ºC 0.7 V DS =600V, V GS =0V T C = 25°C 10 V DS =480V, V GS =0V T C =125°C 100 μA Gate to source forward leakage current V GS = 30V, V DS = 0V 100 Gate to source reverse leakage current V GS = -30V, V DS = 0V -100 I GSS nA ON CHARACTERISTICS R DS(ON) Static drain to source on-state resistance V GS = 10V, l D = 6A V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 0.6 2 0.8 Ω 4 V DYNAMIC CHARACTERISTICS C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance RG Gate resistance V DS = 25V, V GS = 0V, f =1MHz V DS = 0V, V GS = 0V, f =1MHz 1480 1900 200 270 25 35 0.2 1.2 pF Ω SWITCHING CHARACTERISTICS t d(ON) tr t d(OFF) tf QG Turn-on delay time Rise time Turn-off delay time V DD = 300V, V GS = 10V I D = 12A, R GS = 25Ω (Note1,2) Fall time Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller charge) www.nellsemi.com V DD = 480V, V GS = 10V I D = 12A, (Note1,2) 30 70 115 240 95 200 85 180 42 54 8.6 21 Page 2 of 7 ns nC RoHS I2N60 Series RoHS SEMICONDUCTOR Nell High Power Products SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER VSD I S (I SD ) TEST CONDITIONS Min. Typ. Max. UNIT V Diode forward voltage I SD = 12A, V GS = 0V 1.4 Continuous source to drain current Integral reverse P-N junction diode in the MOSFET 12 D (Drain) A I SM Pulsed source current G (Gate) 48 S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 12A, V GS = 0V, dI F /dt = 100A/µs 380 ns 3.5 μC Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2% . 2. Essentially independent of operating temperature. ORDERING INFORMATION SCHEME 12 N 60 A Current rating, ID 12 = 12A MOSFET series N = N-Channel Voltage rating, VDS 60 = 600V Package type A = TO-220AB AF = TO-220F ■ TEST CIRCUITS AND WAVEFORMS Fig.1A Peak diode recovery dv/dt test circuit D.U.T. Fig.1B Peak diode recovery dv/dt waverforms + V GS (Driver) Period D= P.W. P.W. Period V DS V GS =10V + - l SD (D.U.T) l FM , Body Diode forward current di/dt L l RM Body Diode Reverse Current RG Driver V GS Same Type as D.U.T. * dv/dt controlled by R G * l SD controlled by pulse period * D.U.T.-Device under test V DD V DS (D.U.T) Body Diode Recovery dv/dt V DD Body Diode www.nellsemi.com Page 3 of 7 Forward Voltage Drop RoHS I2N60 Series RoHS SEMICONDUCTOR Nell High Power Products ■ TEST CIRCUITS AND WAVEFORMS (Cont.) Fig.2A Switching test circuit Fig.2B Switching Waveforms V DS RL 90% V DS V GS RG V DD D.U.T. V GS 10% 10V t d(ON) t d(OFF) tR Pulse Width ≤ 1µs Duty Factor ≤ 0.1% Fig.3A Gate charge test circuit tF Fig.3B Gate charge waveform V GS Same Type as D.U.T. 50kΩ 12V 0.2µF QG 10V 0.3µF V DS Q GS Q GD V GS D.U.T. 3mA Charge Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms L V DS BV DSS l AS RG V DD l D(t) V DS(t) D.U.T. V DD 10V tp Time tp www.nellsemi.com Page 4 of 7 RoHS I2N60 Series RoHS SEMICONDUCTOR Nell High Power Products ■ TYPICAL CHARACTERISTICS Fig.1 On-State characteristics Fig.2 Transfer characteristics 10 1 V GS 15V 10V 8V 7V 6.5V 6V Bottom: 5.5V Drain-Current, l D (A) Drain Current,l D (A) Top: 10 0 Notes: 1. 250µs pulse test 2. T C = 25°C 10 - 1 1 10 - 10 0 10 1 150°C 25 °C -55°C 10 0 Notes: 1. V DS =50V 2. 250µs pulse width 10 - 1 10 1 Drain Source voltage, V DS (V) 10 Fig.4 Body diode forward voltage variation vs Source current and Temperature 1.8 Reverse drain current, l DR (A) Drain-Source On-Resistance, R DS(ON) (Ω) 8 Gate-Source voltage, V GS (V) Fig.3 On-Resistance variation vs. Drain current and Gate voltage 1.6 1.4 V GS = 10V 1.2 V GS = 20V 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 10 1 150°C 10 0 25 °C Notes: 1. V GS =0V 2. 250µs pulse Test 10 - 1 0.2 35 0.4 0.6 0.8 1.0 1.2 1.4 Drain current, l D (A) Source-Drain voltage, V SD (V) Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics 1.6 12 C iss = C gs +C gd ( C ds = shorted ) C oss = C ds +C gs C rss = C gd 2400 1800 C iss C oss 1200 Notes: 1. V GS =0V 2. f=1MHz C rss 600 0 10 -1 10 0 Gate-Source voltage, V GS (V) 3000 Capacitance (pF) 6 4 2 V DS =300V 8 V DS =480V 6 4 2 Notes: 1. l D =1 2A 0 10 1 0 Drain-Source Voltage, V DS (V) www.nellsemi.com V DS =120V 10 5 10 15 20 25 30 35 Total gate charge ,Q G (nC) Page 5 of 7 40 45 RoHS I2N60 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.7 Maximum safe operating area Operation in This Area is Limited by R DS(ON) Drain current, l D (A) 10 2 100µs 10 1 1ms 10ms 10 0 100ms DC Note: 1. T C = 25°C 2. T J = 150°C 3. Single Pulse 10 -1 10 -2 10 0 10 1 10 2 10 3 Drain-to-Source voltage, V DS (V) Thermal response, R th(j-c) (t) Fig.8 Transient thermal response curve Thermal response, Rth(j-c) 10 0 D = 0.5 0.2 Notes: 1.R th(j-c) (t)=0.56W Max. 2.Duty factor, D=t 1 /t 2 3.T JM -T C =P DM×R th(j-c) (t) 0.1 0.05 10 -1 0.02 0.01 PDM (Single Pulse) t 10 -2 10 -5 T 10 -4 10 -3 10 -2 10 -1 Rectangular Pulse Duration, t 1 (sec) www.nellsemi.com Page 6 of 7 10 -0 10 1 RoHS I2N60 Series RoHS SEMICONDUCTOR Nell High Power Products TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 14.22 (0.560) 13.46 (0.530) 2.67 (0.105) 2.41 (0.095) 0.90 (0.035) 0.70 (0.028) 2.65 (0.104) 2.45 (0.096) D (Drain) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) G (Gate) S (Source) All dimensions in millimeters(inches) TO-220F 10.6 10.4 3.4 3.1 2.8 2.6 3.7 3.2 7.1 6.7 16.0 15.8 16.4 15.4 2 1 3 10° 3.3 3.1 13.7 13.5 2.54 TYP 0.9 0.7 0.48 0.44 2.54 TYP 2.85 2.65 4.8 4.6 D (Drain) G (Gate) S (Source) All dimensions in millimeters www.nellsemi.com Page 7 of 7