UNISONIC TECHNOLOGIES CO., LTD UTT4850 Preliminary Power MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT4850 is an N-channel, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and high switching speed. FEATURES SOP-8 *RDS(ON)< 25mΩ @ VGS=10V, ID=6.0A RDS(ON)< 31mΩ @ VGS=4.5V, ID=5.1A * High switching speed SYMBOL D G S ORDERING INFORMATION Ordering Number Note: UTT4850G-S08-R Pin Assignment: G: Gate Package D: Drain SOP-8 S: Source 1 S 2 S Pin Assignment 3 4 5 6 7 S G D D D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-032.a UTT4850 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=175°C) (Note 1) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy RATINGS UNIT 60 V ±20 V 6.0 A TA=25°C ID TA=70°C 5.0 A IDM 24 A IAS 6 A EAS 120 mJ TA=25°C 1.7 W PD Power Dissipation (Note 1) TA=70°C 1.2 W Junction Temperature TJ -50~+150 °C Storage Temperature Range TSTG -50~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L=6.66mH, IAS=6A, VDD= 50V, RG=25Ω, Starting TJ=25°C SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (Note) Note: Surface Mounted on 1” x 1” FR4 Board. SYMBOL θJA RATINGS 75 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Forward Reverse SYMBOL BVDSS IDSS IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=60V, VGS=0V VDS=60V, VGS=0V, TJ=55°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA On State Drain Current (Note 1) ID(ON) VDS=2V, VGS=10V VGS=10V, ID=6.0A Static Drain-Source On-State Resistance RDS(ON) (Note 1) VGS=4.5V, ID=5.1A DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VDS=25V,VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG VGS=0.1V, f=1MHz SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID≈0.5A, VGS=10V, RG=25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF Total Gate Charge QG Gate to Source Charge QGS VGS=10V, VDS=50V, ID=1.3A Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage (Note 1) VSD IS=1.7A,VGS=0V Notes: 1. Pulse test; pulse width≤300µs, duty cycle≤2%. 2. Guaranteed by design, not subject to production testing. UNISONIC TECHNOLOGIES CO., LTD MIN TYP MAX UNIT 60 1 20 +100 -100 1 40 2.5 20 22 0.5 25 31 V µA µA nA nA V A mΩ mΩ 2500 2700 185 200 150 170 1.4 2.4 pF pF pF Ω 70 80 750 165 70 8 13 90 100 800 200 100 ns ns ns ns nC nC nC 0.8 1.2 V 2 of 4 www.unisonic.com.tw QW-R209-032.a UTT4850 Preliminary UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 3 of 4 www.unisonic.com.tw QR-R209-032.a UTT4850 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw QR-R209-032.a