Datasheet

SSF3322
D
DESCRIPTION
The SSF3322 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
G
S
Schematic diagram
GENERAL FEATURES
● VDS = 30V,ID =5.8A
RDS(ON) < 43mΩ @ VGS=4.5V
RDS(ON) < 28mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3322
SSF3322
SOT-23
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
ID(25℃)
5.8
A
ID(70℃)
4.9
A
IDM
20
A
PD
1.4
W
TJ,TSTG
-55 To 150
℃
RθJA
90
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
BVDSS
VGS=0V ID=250μA
1
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SSF3322
Zero Gate Voltage Drain Current
IDSS
VDS=24V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.9
3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=5A
34
43
mΩ
VGS=10V, ID=5.8A
22
28
mΩ
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
VDS=5V,ID=5.8A
1
5
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=15V,VGS=0V,
F=1.0MHz
680
PF
100
PF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
75
PF
Turn-on Delay Time
td(on)
5
nS
Turn-on Rise Time
tr
4
nS
td(off)
21
nS
Turn-Off Fall Time
tf
5
nS
Total Gate Charge
Qg
14
nC
Gate-Source Charge
Qgs
1.8
nC
Gate-Drain Charge
Qgd
3.2
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDS=15V,VGS=10V,RGEN=3Ω
VDS=15V,ID=5.8A,VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
0.7
1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF3322
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
td(on)
Rl
Vin
D
ton
tr
td(off)
Vout
90%
VOUT
G
toff
tf
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 1: Switching Test Circuit
ZthJA Normalized Transient
Thermal Resistance
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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SSF3322
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES:
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF3322
ATTENTION:
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