ETC 2SK1406

Power F-MOS FETs
2SK1406
Silicon N-Channel Power F-MOS FET
■ Features
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
0.7
15.0±0.3
11.0±0.2
5.0±0.2
3.2
21.0±0.5
15.0±0.2
■ Applications
unit: mm
φ3.2±0.1
16.2±0.5
12.5
3.5
Solder Dip
● Low ON-resistance RDS(on): RDS(on) = 0.32Ω (typ.)
● High-speed switching: tf = 140ns (typ.)
● No secondary breakdown
● High breakdown voltage, large allowable power dissipation
2.0±0.2
2.0±0.1
1.1±0.1
0.6±0.2
5.45±0.3
10.9±0.5
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol
1
Ratings
Unit
Drain to Source breakdown voltage
VDSS
500
V
Gate to Source voltage
VGSS
±20
V
DC
ID
±20
A
Pulse
IDP
±40
A
Drain current
Allowable power
TC = 25°C
dissipation
Ta = 25°C
100
PD
2
3
1: Gate
2: Drain
3: Source
TOP-3 Full Pack Package (a)
W
3
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 400V, VGS = 0
0.1
mA
Gate to Source leakage current
IGSS
VGS = ±20V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 10A
Drain to Source ON-voltage
VDS(on)
VGS = 10V, ID = 20A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 10A
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton
Fall time
tf
Turn-off time (delay time)
td(off)
VGS = 10V, ID = 10A
VDS = 150V, RL = 15Ω
500
V
1
0.32
7.2
5
V
0.4
Ω
9
V
12
S
3000
pF
430
pF
175
pF
150
ns
140
ns
480
ns
1
Power F-MOS FETs
2SK1406
| Yfs |  ID
16
TC=25˚C
20
6V
16
12
5V
8
PD=100W
4
4V
VDS=25V
TC=25˚C
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
0
8
Drain to source voltage VDS (V)
32
40
24
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
VDS=25V
TC=25˚C
20
16
12
8
4
0
2
4
6
8
10
Coss
100
Crss
30
10
0
8
100
80
(1)
60
40
20
3
40
80
120
160
200
Ambient temperature Ta (˚C)
40
48
VDS=150V
VGS=10V
TC=25˚C
600
500
td(off)
400
300
200
240
Non repetitive pulse
TC=25˚C
IDP
30
ID
t=1ms
10
DC
3
1
10ms
0.3
0.1
0.01
80 100 120 140 160
32
ton
tf
0
1
0.03
0
24
800
0
4
1
3
10
30
100
300
1000
Drain to source voltage VDS (V)
8
12
16
20
24
Drain current ID (A)
RDS(on)  ID
Area of safe operation (ASO)
Drain current ID (A)
120
16
100
(2)
2
15V
0.2
Drain to source voltage VDS (V)
(1) TC=Ta
(2) Without heat sink
(PD=3W)
60
VGS=10V
0.4
700
100
40
0.6
ton, tf, td(off)  ID
Ciss
0
PD  Ta
20
0.8
Drain current ID (A)
300
12
160
0
1.0
0
f=1MHz
TC=25˚C
3000
Gate to source voltage VGS (V)
140
1.2
48
1000
0
TC=25˚C
1.4
Ciss, Coss, Crss  VDS
10000
28
Drain current ID (A)
24
1.6
Drain current ID (A)
ID  VGS
32
Allowable power dissipation PD (W)
16
Switching time ton,tf,td(off) (ns)
0
Drain to source ON-resistance RDS(on) (Ω)
VGS=10V
24
7V
Drain current ID (A)
28
Forward transfer admittance |Yfs| (S)
32
RDS(on)  ID
Drain to source ON-resistance RDS(on) (Ω)
ID  VDS
1.6
VGS=10V
1.4
1.2
1.0
0.8
TC=100˚C
0.6
25˚C
0.4
–25˚C
0.2
0
0
8
16
24
32
40
Drain current ID (A)
48